公开(公告)号：US08367556B1

公开(公告)日：2013-02-05

申请号：US13309174

申请日：2011-12-01

申请人： Nicholas C. M. Fuller ,  Pratik P. Joshi ,  Mahmoud Khojasteh ,  Rajiv M. Ranade ,  George G. Totir

发明人： Nicholas C. M. Fuller ,  Pratik P. Joshi ,  Mahmoud Khojasteh ,  Rajiv M. Ranade ,  George G. Totir

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32139 ,  H01L21/31133 ,  H01L21/823437 ,  H01L21/823828

摘要： An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.

公开(公告)号：US20110308584A1

公开(公告)日：2011-12-22

申请号：US12816681

申请日：2010-06-16

申请人： Pratik P. Joshi ,  Young-Hee Kim ,  Steven E. Steen

发明人： Pratik P. Joshi ,  Young-Hee Kim ,  Steven E. Steen

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/022466 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  Y02E10/545 ,  Y02E10/548

摘要： A tunneling layer is provided between a transparent conductive material and a p-doped semiconductor layer of a photovoltaic device. The tunneling layer is comprised of stoichiometric oxides which are formed when an upper surface of the transparent conductive material is subjected to one of the surface modification techniques of this disclosure. The surface modification techniques oxidize the dangling metal bonds of the transparent conductive material. The tunneling layer acts as a protective layer for the transparent conductive material. Moreover, the tunneling layer improves the interface between the transparent conductive material and the p-doped semiconductor layer. The improved interface that exists between the transparent conductive material and the p-doped semiconductor layer results in enhanced properties of the resultant photovoltaic device containing the same. In some embodiments, a high quality single junction solar cell can be provided by this disclosure that has a very well defined interface.

摘要翻译： 在透明导电材料和光伏器件的p掺杂半导体层之间提供隧穿层。 隧道层由当透明导电材料的上表面经受本公开的表面改性技术之一时形成的化学计量的氧化物构成。 表面改性技术氧化透明导电材料的悬挂金属键。 隧道层用作透明导电材料的保护层。 此外，隧道层改善了透明导电材料和p掺杂半导体层之间的界面。 存在于透明导电材料和p掺杂半导体层之间的改进的界面导致所得到的含有该掺杂半导体层的光电器件的性能增强。 在一些实施例中，可以通过本公开提供具有非常良好定义的界面的高质量单结太阳能电池。

公开(公告)号：US08455292B2

公开(公告)日：2013-06-04

申请号：US13229440

申请日：2011-09-09

申请人： Solomon Assefa ,  Pratik P. Joshi ,  Deborah A. Neumayer

发明人： Solomon Assefa ,  Pratik P. Joshi ,  Deborah A. Neumayer

IPC分类号： H01L21/00

CPC分类号： H01L31/105 ,  C23C16/28 ,  G02B6/12004 ,  G02B6/131 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1808 ,  Y02E10/50

摘要： A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.

摘要翻译： 一种形成光电检测器件的方法包括在基片上形成波导特征，并使用等离子体增强化学气相沉积（PECVD）工艺形成包括锗（Ge）膜，沉积在波导特征上的Ge膜的光电检测器特征，PECVD 沉积温度为约500℃至约550℃，沉积压力为约666.612Pa至约1066.579Pa。

公开(公告)号：US20130065349A1

公开(公告)日：2013-03-14

申请号：US13229440

申请日：2011-09-09

申请人： Solomon Assefa ,  Pratik P. Joshi ,  Deborah A. Neumayer

发明人： Solomon Assefa ,  Pratik P. Joshi ,  Deborah A. Neumayer

IPC分类号： H01L31/18 ,  H01L21/205

CPC分类号： H01L31/105 ,  C23C16/28 ,  G02B6/12004 ,  G02B6/131 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1808 ,  Y02E10/50

摘要： A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.

摘要翻译： 一种形成光电检测器件的方法包括在基片上形成波导特征，并使用等离子体增强化学气相沉积（PECVD）工艺形成包括锗（Ge）膜，沉积在波导特征上的Ge膜的光电检测器特征，PECVD 沉积温度为约500℃至约550℃，沉积压力为约666.612Pa至约1066.579Pa。

公开(公告)号：US20110308585A1

公开(公告)日：2011-12-22

申请号：US12816745

申请日：2010-06-16

申请人： Pratik P. Joshi ,  Young-Hee Kim ,  Steven E. Steen

发明人： Pratik P. Joshi ,  Young-Hee Kim ,  Steven E. Steen

IPC分类号： H01L31/0224 ,  H01L31/105 ,  H01L31/18

CPC分类号： H01L31/022466 ,  H01L31/02366 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  Y02E10/548

摘要： A dual transparent conductive material layer is provided between a p-doped semiconductor layer and a substrate layer of a photovoltaic device. The dual transparent conductive material layer includes a first transparent conductive material and a second transparent conductive material wherein the second transparent conductive material is nano-structured. The nano-structured second transparent conductive material acts as a protective layer for the underlying first transparent conductive material. The nano-structured transparent conductive material provides a benefit of a higher Eg of the underlying first transparent conductive material surface and a very high resilience to hydrogen plasma from the nano-structures during the formation of the p-doped semiconductor layer.

摘要翻译： 在p掺杂半导体层和光伏器件的衬底层之间提供双透明导电材料层。 双透明导电材料层包括第一透明导电材料和第二透明导电材料，其中第二透明导电材料是纳米结构的。 纳米结构的第二透明导电材料用作下面的第一透明导电材料的保护层。 纳米结构的透明导电材料提供了下面的第一透明导电材料表面的更高等价的优点，以及在形成p掺杂半导体层期间来自纳米结构的氢等离子体的非常高的回弹性。

公开(公告)号：US20110254138A1

公开(公告)日：2011-10-20

申请号：US12760620

申请日：2010-04-15

申请人： Katherina E. Babich ,  Pratik P. Joshi ,  Kam Leung Lee ,  Deborah A. Neumayer ,  Spyridon Skordas

发明人： Katherina E. Babich ,  Pratik P. Joshi ,  Kam Leung Lee ,  Deborah A. Neumayer ,  Spyridon Skordas

IPC分类号： H01L23/00 ,  F21V9/00 ,  H01L21/321

CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/2686 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved low-temperature absorber, amorphous carbonitride (ACN) with an extinction coefficient (k) of greater than 0.15, and an emissivity of greater than 0.8 is disclosed. The ACN film can also be characterized as having a minimum of hydrocarbon content as observed by FTIR. The ACN film can be used as an effective absorbing layer that absorbs a wide range of electromagnetic radiation from different sources including lasers or flash lamps. A method of forming such an ACN film at a deposition temperature of less than, or equal to, 450° C. is also provided.

摘要翻译： 公开了一种改进的低温吸收剂，具有大于0.15的消光系数（k）和大于0.8的发射率的无定形碳氮化物（ACN）。 ACN膜也可以被表征为具有由FTIR观察到的最低碳氢化合物含量。 ACN膜可以用作吸收来自不同来源（包括激光或闪光灯）的宽范围电磁辐射的有效吸收层。 还提供了在小于或等于450℃的沉积温度下形成这种ACN膜的方法。

公开(公告)号：US20110308583A1

公开(公告)日：2011-12-22

申请号：US12816528

申请日：2010-06-16

申请人： Pratik P. Joshi ,  Young-Hee Kim

发明人： Pratik P. Joshi ,  Young-Hee Kim

IPC分类号： H01L31/00 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： Open circuit voltage of a photovoltaic device including a p-i-n junction including amorphous silicon-containing semiconductor materials is increased by a high power plasma treatment on an amorphous p-doped silicon-containing semiconductor layer before depositing an amorphous intrinsic silicon-containing semiconductor layer. The high power plasma treatment deposits a thin layer of nanocrystalline silicon-containing semiconductor material or converts a surface layer of the amorphous p-doped silicon containing layer into a thin nanocrystalline silicon-containing semiconductor layer. After deposition of an intrinsic amorphous silicon layer, the thin nanocrystalline silicon-containing semiconductor layer functions as an interfacial nanocrystalline silicon-containing semiconductor layer located at a p-i junction. The increase in the open circuit voltage of the photovoltaic device through the plasma treatment depends on the composition of the interfacial crystalline silicon-containing semiconductor layer, and particularly on the atomic concentration of carbon in the interfacial crystalline silicon-containing semiconductor layer.

摘要翻译： 在沉积非晶本征含硅半导体层之前，通过在非晶p掺杂的含硅半导体层上的高功率等离子体处理来增加包括包含非晶含硅半导体材料的p-i-n结的光电器件的开路电压。 高功率等离子体处理沉积薄层的纳米晶体含硅半导体材料或将非晶p掺杂含硅层的表面层转变为薄的纳米晶体含硅半导体层。 在本征非晶硅层沉积之后，薄纳米晶体含硅半导体层用作位于p-i结的界面纳米晶体含硅半导体层。 通过等离子体处理的光电器件的开路电压的增加取决于界面结晶含硅半导体层的组成，特别是取决于界面结晶含硅半导体层中的碳原子浓度。