摘要:
A dual transparent conductive material layer is provided between a p-doped semiconductor layer and a substrate layer of a photovoltaic device. The dual transparent conductive material layer includes a first transparent conductive material and a second transparent conductive material wherein the second transparent conductive material is nano-structured. The nano-structured second transparent conductive material acts as a protective layer for the underlying first transparent conductive material. The nano-structured transparent conductive material provides a benefit of a higher Eg of the underlying first transparent conductive material surface and a very high resilience to hydrogen plasma from the nano-structures during the formation of the p-doped semiconductor layer.
摘要:
Open circuit voltage of a photovoltaic device including a p-i-n junction including amorphous silicon-containing semiconductor materials is increased by a high power plasma treatment on an amorphous p-doped silicon-containing semiconductor layer before depositing an amorphous intrinsic silicon-containing semiconductor layer. The high power plasma treatment deposits a thin layer of nanocrystalline silicon-containing semiconductor material or converts a surface layer of the amorphous p-doped silicon containing layer into a thin nanocrystalline silicon-containing semiconductor layer. After deposition of an intrinsic amorphous silicon layer, the thin nanocrystalline silicon-containing semiconductor layer functions as an interfacial nanocrystalline silicon-containing semiconductor layer located at a p-i junction. The increase in the open circuit voltage of the photovoltaic device through the plasma treatment depends on the composition of the interfacial crystalline silicon-containing semiconductor layer, and particularly on the atomic concentration of carbon in the interfacial crystalline silicon-containing semiconductor layer.
摘要:
A tunneling layer is provided between a transparent conductive material and a p-doped semiconductor layer of a photovoltaic device. The tunneling layer is comprised of stoichiometric oxides which are formed when an upper surface of the transparent conductive material is subjected to one of the surface modification techniques of this disclosure. The surface modification techniques oxidize the dangling metal bonds of the transparent conductive material. The tunneling layer acts as a protective layer for the transparent conductive material. Moreover, the tunneling layer improves the interface between the transparent conductive material and the p-doped semiconductor layer. The improved interface that exists between the transparent conductive material and the p-doped semiconductor layer results in enhanced properties of the resultant photovoltaic device containing the same. In some embodiments, a high quality single junction solar cell can be provided by this disclosure that has a very well defined interface.
摘要:
Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.
摘要:
A method of forming a photovoltaic device containing a buried emitter region and vertical metal contacts is provided. The method includes forming a plurality of metal nanoparticles on exposed portions of a single-crystalline silicon substrate that are not covered by patterned antireflective coatings (ARCs). A metal nanoparticle catalyzed etching process is then used to form trenches within the single-crystalline silicon substrate and thereafter the metal nanoparticles are removed from the trenches. An emitter region is then formed within exposed portions of the single-crystalline silicon substrate, and thereafter a metal contact is formed atop the emitter region.
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摘要:
The present invention relates to a method of fermenting velvet antler (or venison or deer bone) together with a mushroom concentration in order to increase the efficacy thereof, and a fermentation product obtained thereby. In accordance with the present invention, velvet antler is fermented in a state in which it was not concentrated or ground, and the shape thereof is maintained after fermentation. Thus, the loss of velvet antler is insignificant, and the fermented velvet antler has a high efficacy and can be used in various shapes in subsequent processes.
摘要:
An insect-repellent or insecticidal composition comprising an extract or an organic solvent fraction of oak vinegar as an effective ingredient, is provided. The composition comprising extract or organic solvent fraction of oak vinegar as an effective ingredient has superior insect-repellent or insecticidal activities against lasioderma serricorne, which damages tobacco, grains, paper or clothes, reticulitermes speratus kyushuensis Morimoto, which chews the woods from within, or sitophilus oryzae, which has strong tolerance to insecticides, and therefore, can be applied efficaciously as an insect-repellent or insecticidal composition to conserve wooden furniture, an old house, or many organic cultural heritages.
摘要:
Provided is a cell packaging material having a layered structure of one or more layers, wherein at least one layer includes a flame retardant, a coating layer imparted with flame resistance, or both. In the cell packaging material, a cell itself does not include any flame resistant film or flame retardant. Therefore, it is possible to provide a cell with flame resistance while not increasing the cell volume or not affecting the cell operation.
摘要:
A self-diagnostic arrangement for a video display apparatus and method effectuating the same is disclosed. The apparatus according to the present invention includes a cable connector, amplifiers and a cathode ray tube and comprises a microprocessor storing information on a display status, for selectively switching signals to generate horizontal and vertical sync signals for displaying a variety of self-diagnostic displays, an on screen display IC for supplying a blanking signal and a video signal correspondingly responsive to information supplied from the microprocessor and a H/V deflection circuit for supplying on screen display video. signals to the CRT. There is also provided a method of self-diagnosis, which comprises the steps of generating internal horizontal and vertical sync.signals sync signals of predetermined frequency levels and displaying self-diagnostic screens representing video component colors and a display status.
摘要:
A self-diagnostic arrangement for a video display apparatus and method effectuating the same is disclosed. The apparatus according to the present invention includes a cable connector, amplifiers and a cathode ray tube and comprises a microprocessor storing information on a display status, for selectively switching signals to generate horizontal and vertical sync signals for displaying a variety of self-diagnostic displays, an on screen display IC for supplying a blanking signal and a video signal correspondingly responsive to information supplied from the microprocessor and a H/V deflection circuit for supplying on screen display video. signals to the CRT. There is also provided a method of self-diagnosis, which comprises the steps of generating internal horizontal and vertical sync.signals of predetermined frequency levels and displaying self-diagnostic screens representing video component colors and a display status.