DUAL TRANSPARENT CONDUCTIVE MATERIAL LAYER FOR IMPROVED PERFORMANCE OF PHOTOVOLTAIC DEVICES
    1.
    发明申请
    DUAL TRANSPARENT CONDUCTIVE MATERIAL LAYER FOR IMPROVED PERFORMANCE OF PHOTOVOLTAIC DEVICES 审中-公开
    双色透明导电材料层,用于改进光伏器件的性能

    公开(公告)号:US20110308585A1

    公开(公告)日:2011-12-22

    申请号:US12816745

    申请日:2010-06-16

    摘要: A dual transparent conductive material layer is provided between a p-doped semiconductor layer and a substrate layer of a photovoltaic device. The dual transparent conductive material layer includes a first transparent conductive material and a second transparent conductive material wherein the second transparent conductive material is nano-structured. The nano-structured second transparent conductive material acts as a protective layer for the underlying first transparent conductive material. The nano-structured transparent conductive material provides a benefit of a higher Eg of the underlying first transparent conductive material surface and a very high resilience to hydrogen plasma from the nano-structures during the formation of the p-doped semiconductor layer.

    摘要翻译: 在p掺杂半导体层和光伏器件的衬底层之间提供双透明导电材料层。 双透明导电材料层包括第一透明导电材料和第二透明导电材料,其中第二透明导电材料是纳米结构的。 纳米结构的第二透明导电材料用作下面的第一透明导电材料的保护层。 纳米结构的透明导电材料提供了下面的第一透明导电材料表面的更高等价的优点,以及在形成p掺杂半导体层期间来自纳米结构的氢等离子体的非常高的回弹性。

    PLASMA TREATMENT AT A P-I JUNCTION FOR INCREASING OPEN CIRCUIT VOLTAGE OF A PHOTOVOLTAIC DEVICE
    2.
    发明申请
    PLASMA TREATMENT AT A P-I JUNCTION FOR INCREASING OPEN CIRCUIT VOLTAGE OF A PHOTOVOLTAIC DEVICE 审中-公开
    用于增加光伏器件的开路电压的P-I结的等离子体处理

    公开(公告)号:US20110308583A1

    公开(公告)日:2011-12-22

    申请号:US12816528

    申请日:2010-06-16

    摘要: Open circuit voltage of a photovoltaic device including a p-i-n junction including amorphous silicon-containing semiconductor materials is increased by a high power plasma treatment on an amorphous p-doped silicon-containing semiconductor layer before depositing an amorphous intrinsic silicon-containing semiconductor layer. The high power plasma treatment deposits a thin layer of nanocrystalline silicon-containing semiconductor material or converts a surface layer of the amorphous p-doped silicon containing layer into a thin nanocrystalline silicon-containing semiconductor layer. After deposition of an intrinsic amorphous silicon layer, the thin nanocrystalline silicon-containing semiconductor layer functions as an interfacial nanocrystalline silicon-containing semiconductor layer located at a p-i junction. The increase in the open circuit voltage of the photovoltaic device through the plasma treatment depends on the composition of the interfacial crystalline silicon-containing semiconductor layer, and particularly on the atomic concentration of carbon in the interfacial crystalline silicon-containing semiconductor layer.

    摘要翻译: 在沉积非晶本征含硅半导体层之前,通过在非晶p掺杂的含硅半导体层上的高功率等离子体处理来增加包括包含非晶含硅半导体材料的p-i-n结的光电器件的开路电压。 高功率等离子体处理沉积薄层的纳米晶体含硅半导体材料或将非晶p掺杂含硅层的表面层转变为薄的纳米晶体含硅半导体层。 在本征非晶硅层沉积之后,薄纳米晶体含硅半导体层用作位于p-i结的界面纳米晶体含硅半导体层。 通过等离子体处理的光电器件的开路电压的增加取决于界面结晶含硅半导体层的组成,特别是取决于界面结晶含硅半导体层中的碳原子浓度。

    SURFACE TREATMENT OF TRANSPARENT CONDUCTIVE MATERIAL FILMS FOR IMPROVEMENT OF PHOTOVOLTAIC DEVICES
    3.
    发明申请
    SURFACE TREATMENT OF TRANSPARENT CONDUCTIVE MATERIAL FILMS FOR IMPROVEMENT OF PHOTOVOLTAIC DEVICES 审中-公开
    用于改善光伏器件的透明导电材料膜的表面处理

    公开(公告)号:US20110308584A1

    公开(公告)日:2011-12-22

    申请号:US12816681

    申请日:2010-06-16

    IPC分类号: H01L31/00 H01L31/18

    摘要: A tunneling layer is provided between a transparent conductive material and a p-doped semiconductor layer of a photovoltaic device. The tunneling layer is comprised of stoichiometric oxides which are formed when an upper surface of the transparent conductive material is subjected to one of the surface modification techniques of this disclosure. The surface modification techniques oxidize the dangling metal bonds of the transparent conductive material. The tunneling layer acts as a protective layer for the transparent conductive material. Moreover, the tunneling layer improves the interface between the transparent conductive material and the p-doped semiconductor layer. The improved interface that exists between the transparent conductive material and the p-doped semiconductor layer results in enhanced properties of the resultant photovoltaic device containing the same. In some embodiments, a high quality single junction solar cell can be provided by this disclosure that has a very well defined interface.

    摘要翻译: 在透明导电材料和光伏器件的p掺杂半导体层之间提供隧穿层。 隧道层由当透明导电材料的上表面经受本公开的表面改性技术之一时形成的化学计量的氧化物构成。 表面改性技术氧化透明导电材料的悬挂金属键。 隧道层用作透明导电材料的保护层。 此外,隧道层改善了透明导电材料和p掺杂半导体层之间的界面。 存在于透明导电材料和p掺杂半导体层之间的改进的界面导致所得到的含有该掺杂半导体层的光电器件的性能增强。 在一些实施例中,可以通过本公开提供具有非常良好定义的界面的高质量单结太阳能电池。

    Buried selective emitter formation for photovoltaic devices utilizing metal nanoparticle catalyzed etching
    5.
    发明授权
    Buried selective emitter formation for photovoltaic devices utilizing metal nanoparticle catalyzed etching 失效
    用于利用金属纳米颗粒催化蚀刻的光伏器件的掩埋式选择性发射极形成

    公开(公告)号:US08759139B2

    公开(公告)日:2014-06-24

    申请号:US13212740

    申请日:2011-08-18

    IPC分类号: H01L31/18

    摘要: A method of forming a photovoltaic device containing a buried emitter region and vertical metal contacts is provided. The method includes forming a plurality of metal nanoparticles on exposed portions of a single-crystalline silicon substrate that are not covered by patterned antireflective coatings (ARCs). A metal nanoparticle catalyzed etching process is then used to form trenches within the single-crystalline silicon substrate and thereafter the metal nanoparticles are removed from the trenches. An emitter region is then formed within exposed portions of the single-crystalline silicon substrate, and thereafter a metal contact is formed atop the emitter region.

    摘要翻译: 提供一种形成包含掩埋发射极区域和垂直金属触点的光伏器件的方法。 该方法包括在未被图案化抗反射涂层(ARC)覆盖的单晶硅衬底的暴露部分上形成多个金属纳米颗粒。 然后使用金属纳米颗粒催化的蚀刻工艺在单晶硅衬底内形成沟槽,此后从沟槽中去除金属纳米颗粒。 然后在单晶硅衬底的暴露部分内形成发射极区域,然后在发射极区域的顶部形成金属接触。

    METHOD FOR FERMENTING ANTLERS, VENISON, OR DEER BONES USING MUSHROOMS, AND RESULTANT FERMENTED PRODUCTS
    6.
    发明申请
    METHOD FOR FERMENTING ANTLERS, VENISON, OR DEER BONES USING MUSHROOMS, AND RESULTANT FERMENTED PRODUCTS 审中-公开
    使用FOR FOR FOR TING AN AN AN PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS PRODUCTS

    公开(公告)号:US20140017333A1

    公开(公告)日:2014-01-16

    申请号:US14003539

    申请日:2012-02-24

    IPC分类号: A61K35/32 C12P1/02

    摘要: The present invention relates to a method of fermenting velvet antler (or venison or deer bone) together with a mushroom concentration in order to increase the efficacy thereof, and a fermentation product obtained thereby. In accordance with the present invention, velvet antler is fermented in a state in which it was not concentrated or ground, and the shape thereof is maintained after fermentation. Thus, the loss of velvet antler is insignificant, and the fermented velvet antler has a high efficacy and can be used in various shapes in subsequent processes.

    摘要翻译: 本发明涉及一种将天鹅绒鹿茸(或鹿肉或鹿骨)与蘑菇浓度一起发酵以提高其功效的方法,以及由此获得的发酵产物。 根据本发明,天鹅绒鹿茸在未浓缩或研磨的状态下发酵,发酵后保持其形状。 因此,天鹅绒鹿茸的损失是微不足道的,发酵天鹅绒鹿茸具有高效率,并且可以在后续过程中以各种形状使用。

    Self-diagnosis arrangement for a video display and method of implementing the same
    9.
    再颁专利
    Self-diagnosis arrangement for a video display and method of implementing the same 有权
    视频显示器的自诊断方案及其实现方法

    公开(公告)号:USRE38537E1

    公开(公告)日:2004-06-22

    申请号:US09401485

    申请日:1999-09-22

    申请人: Young-Hee Kim

    发明人: Young-Hee Kim

    IPC分类号: G09G108

    摘要: A self-diagnostic arrangement for a video display apparatus and method effectuating the same is disclosed. The apparatus according to the present invention includes a cable connector, amplifiers and a cathode ray tube and comprises a microprocessor storing information on a display status, for selectively switching signals to generate horizontal and vertical sync signals for displaying a variety of self-diagnostic displays, an on screen display IC for supplying a blanking signal and a video signal correspondingly responsive to information supplied from the microprocessor and a H/V deflection circuit for supplying on screen display video. signals to the CRT. There is also provided a method of self-diagnosis, which comprises the steps of generating internal horizontal and vertical sync.signals sync signals of predetermined frequency levels and displaying self-diagnostic screens representing video component colors and a display status.

    Self-diagnosis arrangement for a video display and method of
implementing the same
    10.
    发明授权
    Self-diagnosis arrangement for a video display and method of implementing the same 失效
    视频显示器的自诊断方案及其实现方法

    公开(公告)号:US5670972A

    公开(公告)日:1997-09-23

    申请号:US546865

    申请日:1995-10-23

    申请人: Young-Hee Kim

    发明人: Young-Hee Kim

    摘要: A self-diagnostic arrangement for a video display apparatus and method effectuating the same is disclosed. The apparatus according to the present invention includes a cable connector, amplifiers and a cathode ray tube and comprises a microprocessor storing information on a display status, for selectively switching signals to generate horizontal and vertical sync signals for displaying a variety of self-diagnostic displays, an on screen display IC for supplying a blanking signal and a video signal correspondingly responsive to information supplied from the microprocessor and a H/V deflection circuit for supplying on screen display video. signals to the CRT. There is also provided a method of self-diagnosis, which comprises the steps of generating internal horizontal and vertical sync.signals of predetermined frequency levels and displaying self-diagnostic screens representing video component colors and a display status.

    摘要翻译: 公开了一种用于视频显示装置的自诊断装置和实现其的方法。 根据本发明的装置包括电缆连接器,放大器和阴极射线管,并且包括存储关于显示状态的信息的微处理器,用于选择性地切换信号以产生用于显示各种自诊断显示器的水平和垂直同步信号, 用于提供相应于从微处理器提供的信息的消隐信号和视频信号的屏幕显示IC和用于提供屏幕显示视频的H / V偏转电路。 信号到CRT。 还提供了一种自诊断方法,其包括以下步骤:产生预定频率水平的内部水平和垂直同步信号,并且显示表示视频分量颜色和显示状态的自诊断屏幕。