摘要:
The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region.
摘要:
A complementary metal oxide semiconductor (CMOS) structure including a scaled n-channel field effect transistor (nFET) and a scaled p-channel field transistor (pFET) which do not exhibit an increased threshold voltage and reduced mobility during operation is provided Such a structure is provided by forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. In some embodiments, the pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack is also plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and an nFET threshold voltage adjusted species located therein, while the plasma nitrided, pFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and a pFET threshold voltage adjusted species located therein.
摘要:
A complementary metal oxide semiconductor (CMOS) structure including a scaled n-channel field effect transistor (nFET) and a scaled p-channel field transistor (pFET) which do not exhibit an increased threshold voltage and reduced mobility during operation is provided Such a structure is provided by forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. In some embodiments, the pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack is also plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and an nFET threshold voltage adjusted species located therein, while the plasma nitrided, pFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and a pFET threshold voltage adjusted species located therein.
摘要:
The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region.
摘要:
A limited number of cycles of atomic layer deposition (ALD) of Hi-K material followed by deposition of an interlayer dielectric and application of further Hi-K material and optional but preferred annealing provides increased Hi-K material content and increased breakdown voltage for input/output (I/O) transistors compared with logic transistors formed on the same chip or wafer while providing scalability of the inversion layer of the I/O and logic transistors without significantly compromising performance or bias temperature instability (BTI) parameters.
摘要:
A limited number of cycles of atomic layer deposition (ALD) of Hi-K material followed by deposition of an interlayer dielectric and application of further Hi-K material and optional but preferred annealing provides increased Hi-K material content and increased breakdown voltage for input/output (I/O) transistors compared with logic transistors formed on the same chip or wafer while providing scalability of the inversion layer of the I/O and logic transistors without significantly compromising performance or bias temperature instability (BTI) parameters.
摘要:
A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor.
摘要:
Each of a first substrate and a second substrate includes a surface having a diffusion resistant dielectric material such as silicon nitride. Recessed regions are formed in the diffusion resistant dielectric material and filled with a bondable dielectric material. The patterns of the metal pads and bondable dielectric material portions in the first and second substrates can have a mirror symmetry. The first and second substrates are brought into physical contact and bonded employing contacts between metal pads and contacts between the bondable dielectric material portions. Through-substrate-via (TSV) structures are formed through bonded dielectric material portions. The interface between each pair of bonded dielectric material portions located around a TSV structure is encapsulated by two diffusion resistant dielectric material layers so that diffusion of metal at a bonding interface is contained within each pair of bonded dielectric material portions.
摘要:
A non-photosensitive polymeric resist containing at least two immiscible polymeric block components is deposited on the planar surface. The non-photosensitive polymeric resist is annealed to allow phase separation of immiscible components and developed to remove at least one of the at least two polymeric block components. Nanoscale features, i.e., features of nanometer scale, including at least one recessed region having a nanoscale dimension is formed in the polymeric resist. The top surface of the polymeric resist is modified for enhanced etch resistance by an exposure to an energetic beam, which allows the top surface of the patterned polymeric resist to become more resistant to etching processes and chemistries. The enhanced ratio of etch resistance between the two types of surfaces provides improved image contrast and fidelity between areas having the top surface and the at least one recessed region.
摘要:
Methods of forming a metal interconnect and an IC chip including the metal interconnect are disclosed. One embodiment of the method may include providing an integrated circuit (IC) chip up to and including a middle of line (MOL) layer, the MOL layer including a contact positioned within a first dielectric; recessing the first dielectric such that the contact extends beyond an upper surface of the first dielectric; forming a second dielectric over the first dielectric such that the second dielectric surrounds at least a portion of the contact, the second dielectric having a lower dielectric constant than the first dielectric; forming a planarizing layer over the second dielectric; forming an opening through the planarizing layer and into the second dielectric to the contact; and forming a metal in the opening to form the metal interconnect.