公开(公告)号：US20090117360A1

公开(公告)日：2009-05-07

申请号：US11933760

申请日：2007-11-01

申请人： Lawrence A. Clevenger ,  Timothy J. Dalton ,  Habib Hichri ,  Louis L. Hsu ,  Kaushik A. Kumar ,  Carl Radens ,  Shahab Siddiqui ,  Chih-Chao Yang

发明人： Lawrence A. Clevenger ,  Timothy J. Dalton ,  Habib Hichri ,  Louis L. Hsu ,  Kaushik A. Kumar ,  Carl Radens ,  Shahab Siddiqui ,  Chih-Chao Yang

IPC分类号： G03C1/73 ,  B05D3/00 ,  B32B27/06

CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  H01L21/0338

摘要： A non-photosensitive polymeric resist containing at least two immiscible polymeric block components is deposited on the planar surface. The non-photosensitive polymeric resist is annealed to allow phase separation of immiscible components and developed to remove at least one of the at least two polymeric block components. Nanoscale features, i.e., features of nanometer scale, including at least one recessed region having a nanoscale dimension is formed in the polymeric resist. The top surface of the polymeric resist is modified for enhanced etch resistance by an exposure to an energetic beam, which allows the top surface of the patterned polymeric resist to become more resistant to etching processes and chemistries. The enhanced ratio of etch resistance between the two types of surfaces provides improved image contrast and fidelity between areas having the top surface and the at least one recessed region.

摘要翻译： 含有至少两个不混溶的聚合物嵌段组分的非光敏聚合物抗蚀剂沉积在平面上。 将非光敏聚合物抗蚀剂退火以允许不相容组分的相分离并显影以除去至少两种聚合物嵌段组分中的至少一种。 在聚合物抗蚀剂中形成纳米尺度特征，即纳米尺度的特征，包括具有纳米级尺寸的至少一个凹陷区域。 聚合物抗蚀剂的顶表面通过暴露于能量束而被改进以提高耐蚀刻性，这允许图案化聚合物抗蚀剂的顶表面变得更耐蚀刻工艺和化学物质。 两种类型表面之间的增强的耐蚀刻比提供了改善的图像对比度和具有顶表面和至少一个凹陷区域的区域之间的保真度。

公开(公告)号：US20050087490A1

公开(公告)日：2005-04-28

申请号：US10695374

申请日：2003-10-28

申请人： Mark Chace ,  Jeffrey Hedrick ,  Habib Hichri ,  Keith Pope ,  Jia Lee ,  Kelly Malone ,  Kenneth McCullough ,  Wayne Moreau ,  Darryl Restaino ,  Shahab Siddiqui

发明人： Mark Chace ,  Jeffrey Hedrick ,  Habib Hichri ,  Keith Pope ,  Jia Lee ,  Kelly Malone ,  Kenneth McCullough ,  Wayne Moreau ,  Darryl Restaino ,  Shahab Siddiqui

IPC分类号： B01D11/04 ,  B01D11/00

CPC分类号： B01D11/0407

摘要： A process of removing impurities from a cured low dielectric constant organic polymeric film disposed on a semiconductor device. The process involves disposing a low dielectric constant curable organic polymeric film on an electrically conductive surface of a semiconductor device. The organic polymeric film is cured on the semiconductor device and thereupon contacted with supercritical carbon dioxide, optionally in the presence of at least one cosolvent.

摘要翻译： 从设置在半导体器件上的固化的低介电常数有机聚合物膜去除杂质的方法。 该方法包括将低介电常数可固化有机聚合物膜设置在半导体器件的导电表面上。 有机聚合物膜在半导体器件上固化，随后与超临界二氧化碳接触，任选地在至少一种助溶剂的存在下。

公开(公告)号：US08030157B1

公开(公告)日：2011-10-04

申请号：US12782050

申请日：2010-05-18

申请人： Habib Hichri ,  Ahmad D. Katnani ,  Kaushik A. Kumar ,  Narender Rana ,  Richard S. Wise ,  Hakeem B. S. Akinmade-Yusuff

发明人： Habib Hichri ,  Ahmad D. Katnani ,  Kaushik A. Kumar ,  Narender Rana ,  Richard S. Wise ,  Hakeem B. S. Akinmade-Yusuff

IPC分类号： H01L21/8242

CPC分类号： H01L21/76232

摘要： A method of forming a trench in a semiconductor device formed of a substrate and a first layer formed over the substrate includes forming an initial trench that passes through the first layer to the substrate, the initial trench having a diameter that decreases from a first diameter to a second diameter, the second diameter being measured at a distance closer to the substrate than the first diameter; exposing the trench to a dopant via an orthogonal ion implant to form doped regions sidewalls of the trench; and etching the trench to remove at least some of the doped regions.

摘要翻译： 在由衬底和形成在衬底上的第一层形成的半导体器件中形成沟槽的方法包括形成通过第一层到衬底的初始沟槽，初始沟槽的直径从第一直径减小到 第二直径，第二直径在比第一直径更靠近基板的距离处被测量; 通过正交离子注入将沟槽暴露于掺杂剂以形成沟槽的掺杂区域侧壁; 并蚀刻沟槽以去除至少一些掺杂区域。

公开(公告)号：US07214608B2

公开(公告)日：2007-05-08

申请号：US10710706

申请日：2004-07-29

申请人： Matthew S. Angyal ,  Peter E. Biolsi ,  Lawrence A. Clevenger ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Michael W. Lane ,  Jeffrey R. Marino ,  Vincent J. McGahay ,  Theodorus E. Standaert

发明人： Matthew S. Angyal ,  Peter E. Biolsi ,  Lawrence A. Clevenger ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Michael W. Lane ,  Jeffrey R. Marino ,  Vincent J. McGahay ,  Theodorus E. Standaert

IPC分类号： H01L21/4763

CPC分类号： H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76844

摘要： Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.

摘要翻译： 在蚀刻步骤之后密封有机ILD层和金属层的方法。 该方法包括蚀刻穿过ILD层并留下下面的金属层帽的剩余部分，将该装置保持在惰性气体中，并将​​衬垫的至少一部分沉积到开口中以密封ILD层和金属层。 随后的处理可以包括通过蚀刻穿过衬套的一部分和盖层的剩余部分以及沉积金属来形成通孔。

公开(公告)号：US06831363B2

公开(公告)日：2004-12-14

申请号：US10319032

申请日：2002-12-12

申请人： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

发明人： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

IPC分类号： H01L2348

CPC分类号： H01L21/76808 ,  H01L21/76801 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

摘要翻译： 用于半导体器件的互连结构包括在较低金属化水平上形成的有机低介电常数（低k）电介质层。 形成的通孔在低k电介质层内，通孔连接在下金属化层形成的下金属化线与上金属化层形成的上金属化线。 通孔被选自具有热膨胀系数（CTE）的材料的结构轴环包围，以便在低k电介质层的热膨胀之后保护通孔不受剪切力的影响。

公开(公告)号：US08642475B2

公开(公告)日：2014-02-04

申请号：US12975327

申请日：2010-12-21

申请人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

发明人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

IPC分类号： H01L21/311

CPC分类号： H01L21/31138 ,  H01L21/32139

摘要： A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.

摘要翻译： 集成电路系统的制造方法包括：提供基板; 在衬底上形成多晶硅层; 在所述多晶硅层上形成抗反射涂层; 将抗反射涂层图案蚀刻到抗反射涂层中，在多晶硅层上留下抗反射涂层残留物; 以及用包括溴化氢，氯和氧的蚀刻剂气体混合物蚀刻抗反射涂层残余物以除去抗反射涂层残余物以减轻多晶硅突起的形成。

公开(公告)号：US20120178241A1

公开(公告)日：2012-07-12

申请号：US12986266

申请日：2011-01-07

申请人： Kelly Malone ,  Habib Hichri

发明人： Kelly Malone ,  Habib Hichri

IPC分类号： H01L21/20 ,  B05D5/00 ,  H01B1/02

CPC分类号： H01B5/14 ,  H01B1/02 ,  H01B13/0026 ,  H01L21/283 ,  H01L21/76843 ,  H01L21/76871 ,  Y10T428/24999 ,  Y10T428/2982 ,  Y10T428/2989 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A metal seed composition useful in seeding a metal diffusion barrier or conductive metal layer on a semiconductor or dielectric substrate, the composition comprising: a nanoscopic metal component that includes a metal useful as a metal diffusion barrier or conductive metal; an adhesive component for attaching said nanoscopic metal component on said semiconductor or dielectric substrate; and a linker component that links said nanoscopic metal component with said adhesive component. Semiconductor and dielectric substrates coated with the seed compositions, as well as methods for depositing the seed compositions, are also described.

摘要翻译： 一种金属种子组合物，其可用于在半导体或电介质基底上接种金属扩散阻挡层或导电金属层，所述组合物包括：纳米金属组分，其包含可用作金属扩散阻挡层或导电金属的金属; 用于将所述纳米金属部件附着在所述半导体或电介质基板上的粘合部件; 以及将所述纳米金属组分与所述粘合剂组分连接的连接剂组分。 还描述了涂覆有种子组合物的半导体和电介质基质以及沉积种子组合物的方法。

公开(公告)号：US20070111466A1

公开(公告)日：2007-05-17

申请号：US11164290

申请日：2005-11-17

申请人： Ronald DellaGuardia ,  Daniel Edelstein ,  Habib Hichri ,  Vincent McGahay

发明人： Ronald DellaGuardia ,  Daniel Edelstein ,  Habib Hichri ,  Vincent McGahay

IPC分类号： H01L21/76

CPC分类号： H01L21/31144 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/76808

摘要： Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the at most lightly crosslinked polymer and planarizing layer are removed, the at most lightly crosslinked polymer removal is easier than removal of the planarizing layer, i.e., crosslinked polymer, and does not damage the surrounding dielectric compared to removal chemistries used for the crosslinked polymer.

摘要翻译： 公开了减少在去除平坦化层例如交联聚合物期间对超低介电常数（ULK）电介质的损伤的方法。 该方法至少部分地用至少轻度交联的聚合物填充开口，随后是平坦化层。 当除去至多轻度交联的聚合物和平坦化层时，与用于交联聚合物的去除化学物质相比，去除至多轻度交联的聚合物去除比去除平坦化层即交联聚合物更容易，并且不损坏周围的电介质 。

公开(公告)号：US08822342B2

公开(公告)日：2014-09-02

申请号：US12981519

申请日：2010-12-30

申请人： Ravi Prakash Srivastava ,  Oluwafemi. O. Ogunsola ,  Craig Child ,  Muhammed Shafi Kurikka Valappil Pallachalil ,  Habib Hichri ,  Matthew Angyal ,  Hideshi Miyajima

发明人： Ravi Prakash Srivastava ,  Oluwafemi. O. Ogunsola ,  Craig Child ,  Muhammed Shafi Kurikka Valappil Pallachalil ,  Habib Hichri ,  Matthew Angyal ,  Hideshi Miyajima

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76813 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1036 ,  H01L2221/1063

摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供用具有第一和第二区域的电介质层制备的衬底。 第一区域包括宽的特征，第二区域包括狭窄的特征。 在宽和窄特征的底部之间存在深度增量。 在基板上形成非保形层，并且在第一和第二区域中对宽且窄的沟槽进行排列。 去除非保形层。 去除非保形层减少了第一和第二区域中宽和窄特征的底部之间的深度增量。

公开(公告)号：US20120153474A1

公开(公告)日：2012-06-21

申请号：US12975327

申请日：2010-12-21

申请人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

发明人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

IPC分类号： H01L21/283 ,  H01L29/49

CPC分类号： H01L21/31138 ,  H01L21/32139

摘要： A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.

摘要翻译： 集成电路系统的制造方法包括：提供基板; 在衬底上形成多晶硅层; 在所述多晶硅层上形成抗反射涂层; 将抗反射涂层图案蚀刻到抗反射涂层中，在多晶硅层上留下抗反射涂层残留物; 以及用包括溴化氢，氯和氧的蚀刻剂气体混合物蚀刻抗反射涂层残余物以除去抗反射涂层残余物以减轻多晶硅突起的形成。