公开(公告)号：US20240234482A9

公开(公告)日：2024-07-11

申请号：US18047978

申请日：2022-10-19

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Michael Mutch ,  Luca Fumagalli ,  Hisham Abdussamad Abbas ,  Brenda D. Kraus ,  Dojun Kim ,  Christopher W. Petz ,  Darwin Franseda Fan

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/12 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/1218 ,  H01L27/10814 ,  H01L27/10852

Abstract: A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described.

公开(公告)号：US11825662B2

公开(公告)日：2023-11-21

申请号：US17377665

申请日：2021-07-16

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Vassil N. Antonov ,  Jaydeb Goswami ,  Albert Liao ,  Christopher W. Petz ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L21/00 ,  H10B53/30 ,  H01L21/02 ,  H01L49/02

CPC classification number: H10B53/30 ,  H01L21/02175 ,  H01L21/02244 ,  H01L28/60

Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.

公开(公告)号：US11515147B2

公开(公告)日：2022-11-29

申请号：US16708141

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Richard L. Elliott ,  Christopher W. Petz

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/00

Abstract: A material deposition system comprises a dopant source containing at least one dopant precursor material, an inert gas source containing at least one noble gas, and a physical vapor deposition apparatus in selective fluid communication with the dopant source and the inert gas source. The physical vapor deposition apparatus comprises a housing structure, a target electrode, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one dopant precursor material and the at least one noble gas. The target electrode is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure and is spaced apart from the target electrode. A method of forming a microelectronic device, a microelectronic device, a memory device, and an electronic system are also described.

公开(公告)号：US11322502B2

公开(公告)日：2022-05-03

申请号：US16504681

申请日：2019-07-08

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Christopher W. Petz ,  Sanket S. Kelkar ,  Hidekazu Nobuto

IPC: H01L27/108 ,  G11C5/06

Abstract: An apparatus comprising a memory array comprising access lines. Each of the access lines comprises an insulating material adjacent a bottom surface and sidewalls of a base material, a first conductive material adjacent the insulating material, a second conductive material adjacent the first conductive material, and a barrier material between the first conductive material and the second conductive material. The barrier material is configured to suppress migration of reactive species from the second conductive material. Methods of forming the apparatus and electronic systems are also disclosed.

公开(公告)号：US20210175239A1

公开(公告)日：2021-06-10

申请号：US16704657

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Vassil N. Antonov ,  Jaydeb Goswami ,  Albert Liao ,  Christopher W. Petz ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L27/11507 ,  H01L49/02 ,  H01L21/02

Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb. Other aspects, including method, are disclosed.

公开(公告)号：US10957644B2

公开(公告)日：2021-03-23

申请号：US15887064

申请日：2018-02-02

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L23/528 ,  H01L21/311 ,  H01L21/3213

Abstract: Some embodiments include an integrated structure having a conductive region which contains one or more elements from Group 2 of the periodic table. Some embodiments include an integrated structure which has a conductive region over and directly against a base material. The conductive region includes one or more elements from Group 2 of the periodic table, and has a pair of opposing sidewalls along a cross-section. A capping material is over and directly against the conductive region. Protective material is along and directly against the sidewalls of the protective region.

公开(公告)号：US20210013318A1

公开(公告)日：2021-01-14

申请号：US16509204

申请日：2019-07-11

Applicant: Micron Technology, Inc.

Inventor： An-Jen B. Cheng ,  Brenda D. Kraus ,  Sanket S. Kelkar ,  Matthew N. Rocklein ,  Christopher W. Petz ,  Richard Beeler ,  Dojun Kim

IPC: H01L29/51 ,  H01G4/018 ,  H01L21/02 ,  H01L21/28

Abstract: Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.

公开(公告)号：US10707212B1

公开(公告)日：2020-07-07

申请号：US16235957

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US20200185406A1

公开(公告)日：2020-06-11

申请号：US16216088

申请日：2018-12-11

Applicant: Micron Technology, Inc.

Inventor： Haoyu Li ,  Everett A. McTeer ,  Christopher W. Petz ,  Yongjun J. Hu

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor device comprises a semiconductor material extending through a stack of alternating levels of a conductive material and an insulative material, and a material comprising cerium oxide and at least another oxide adjacent to the semiconductor material. Related electronic systems and methods are also disclosed.

公开(公告)号：US12046658B2

公开(公告)日：2024-07-23

申请号：US16509204

申请日：2019-07-11

Applicant: Micron Technology, Inc.

Inventor： An-Jen B. Cheng ,  Brenda D. Kraus ,  Sanket S. Kelkar ,  Matthew N. Rocklein ,  Christopher W. Petz ,  Richard Beeler ,  Dojun Kim

IPC: H01G4/018 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H10B12/00 ,  H01G4/005

CPC classification number: H01L29/517 ,  H01G4/018 ,  H01L21/02156 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/28194 ,  H10B12/30 ,  H01G4/005 ,  H01L21/02164 ,  H01L21/02194

Abstract: Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.