公开(公告)号：US4277525A

公开(公告)日：1981-07-07

申请号：US133092

申请日：1980-03-24

申请人： Muneo Nakayama ,  Toshihiro Nishimura ,  Hisashi Nakane ,  Shozo Toda ,  Yoshio Hotta ,  Mitsuaki Minato

发明人： Muneo Nakayama ,  Toshihiro Nishimura ,  Hisashi Nakane ,  Shozo Toda ,  Yoshio Hotta ,  Mitsuaki Minato

IPC分类号： C08G77/00 ,  C08G77/02 ,  C08G77/06 ,  C09D183/00 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  B05D3/02

CPC分类号： C09D183/14 ,  C09D183/02 ,  C09D183/04

摘要： Liquid compositions suitable for providing silica-based coating films on to various substrate surfaces are prepared by the reaction of an alkoxy-containing silane, a lower carboxylic acid and an alcohol in the presence of a reaction accelerator which is an organic acid different from the above mentioned lower carboxylic acid. The reaction proceeds very smoothly even in the absence of any halogen-containing compounds, and the resultant liquid coating compositions are free from the problem of corrosion due to the presence of a halogen-containing ingredient.

摘要翻译： 适用于在各种基材表面上提供二氧化硅基涂膜的液体组合物是通过含有烷氧基的硅烷，低级羧酸和醇在与上述不同的有机酸的反应促进剂存在下反应来制备的 提到的低级羧酸。 即使不存在任何含卤素化合物，反应也非常顺利，所得到的液体涂料组合物由于含卤素成分的存在而没有腐蚀的问题。

公开(公告)号：US4268539A

公开(公告)日：1981-05-19

申请号：US960652

申请日：1978-11-14

申请人： Muneo Nakayama ,  Toshihiro Nishimura ,  Akira Hashimoto ,  Hisashi Nakane ,  Teruo Kimura

发明人： Muneo Nakayama ,  Toshihiro Nishimura ,  Akira Hashimoto ,  Hisashi Nakane ,  Teruo Kimura

IPC分类号： C03C17/25 ,  C03C17/27 ,  C04B41/50 ,  H01B1/08 ,  H01B13/00 ,  B05D5/12 ,  B05D1/02 ,  B05D3/02 ,  C03C17/23

CPC分类号： C04B41/5009 ,  C03C17/27 ,  H01B1/08 ,  C03C2217/215 ,  C03C2218/11 ,  C03C2218/322

摘要： A liquid coating composition for formation of a transparent conductive film, which comprises a solution of indium nitrate in a .beta.-diketone or a mixture of a .beta.-diketone and another organic solvent or a reaction product of indium nitrate with a .beta.-diketone, an activator and an organic solvent other than a .beta.-diketone, is disclosed.When this coating composition is coated on a substrate and the coated substrate is heat-treated at a temperature higher than about 350.degree. C., there can be obtained a transparent conductive film having excellent transparency, electrical conductivity and mechanical strength.

摘要翻译： 用于形成透明导电膜的液体涂料组合物，其包含硝酸铟在β-二酮或β-二酮与另一种有机溶剂的混合物中的溶液或硝酸铟与β-二酮的反应产物， 活化剂和除β-二酮以外的有机溶剂。 当将这种涂料组合物涂覆在基材上并且涂覆的基材在高于约350℃的温度下进行热处理时，可以获得具有优异的透明性，导电性和机械强度的透明导电膜。

公开(公告)号：US4550242A

公开(公告)日：1985-10-29

申请号：US424287

申请日：1982-09-27

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

IPC分类号： H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67781 ,  H01L21/67778 ,  Y10S156/912 ,  Y10S414/137

摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.

摘要翻译： 一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。 该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收 来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制 上述机制。 自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

公开(公告)号：US4474642A

公开(公告)日：1984-10-02

申请号：US514793

申请日：1983-07-18

申请人： Hisashi Nakane ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Hisashi Nakane ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： C23F1/00 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/3213 ,  C23F1/02 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/32139 ,  H01L21/312

摘要： The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.

摘要翻译： 本发明提供了一种用于在衬底的表面上提供铝膜的布线和电极的改进方法。 代替在金属膜上直接形成有机抗蚀剂层的常规方法，通过在金属膜和有机抗蚀剂之间设置主要由二氧化硅构成的辅助掩模层，可以显着提高图案的细度和精度 层; 并通过用含氟蚀刻气体通过有机抗蚀剂层的图案化掩模蚀刻辅助掩模层以形成图案化的掩蔽层，然后用含氯蚀刻气体通过蚀刻气体蚀刻金属膜，并进行图案蚀刻 图案化的辅助掩模层的掩模，然后最后去除剩余的辅助掩模层。

公开(公告)号：US4797348A

公开(公告)日：1989-01-10

申请号：US161213

申请日：1988-02-17

申请人： Yoichi Nakamura ,  Shirushi Yamamoto ,  Takashi Komine ,  Akira Yokota ,  Hisashi Nakane

发明人： Yoichi Nakamura ,  Shirushi Yamamoto ,  Takashi Komine ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： G03F7/095 ,  G03F7/26

CPC分类号： G03F7/095

摘要： A dually photosensitive composition useful as a photoresist in the manufacture of ICs and the like electronic devices, which is positively photosensitive by exposure to ultraviolet in a relatively small dose but negatively photosensitive by exposure to ultraviolet in a substantially larger dose than above or by exposure to far ultraviolet light, is obtained by admixing a positive-type photoresist material comprising a novolac resin and an o-naphthoquinone diazide compound with a bisazide compound such as 4,4'-diazidodiphenyl sulfide. The inventive photosensitive composition provides a possibility of developing an ingenious technique for patterning of a photoresist layer on the substrate such as a checkboard-like patterned layer by use of a photomask of a line-and-space pattern.

摘要翻译： 在制造IC等电子装置中用作光致抗蚀剂的双重光敏组合物，其通过以相对较小的剂量暴露于紫外线但以相对较高的剂量暴露于紫外线但通过暴露于 通过将包含酚醛清漆树脂和邻萘醌二叠氮化合物的正型光致抗蚀剂材料与4,4'-二叠氮基二苯基硫化物等双叠氮化合物混合而得到。 本发明的光敏组合物提供了通过使用线间距图案的光掩模来开发用于图案化诸如棋盘状图案化层的基板上的光致抗蚀剂层的巧妙技术的可能性。

公开(公告)号：US4902770A

公开(公告)日：1990-02-20

申请号：US52466

申请日：1987-05-20

申请人： Wataru Ishii ,  Shozo Miyazawa ,  Shinji Tsuchiya ,  Hisashi Nakane ,  Akira Yokota

发明人： Wataru Ishii ,  Shozo Miyazawa ,  Shinji Tsuchiya ,  Hisashi Nakane ,  Akira Yokota

IPC分类号： G03F7/09 ,  G03F7/11

CPC分类号： G03F7/11 ,  G03F7/094

摘要： The undercoating composition of the invention, useful for providing an undercoating layer for a top coat of a photosensitive resist layer on a substrate surface, comprises, as a principal ingredient thereof, a condensation product obtained by the condensation reaction between a hydroxy-substituted diphenylamine and a melamine compound substituted on the nitrogen atoms with methylol groups and/or alkoxymethyl groups. The undercoating obtained of the composition is highly resistant against the attack by the overcoating solution applied thereon so that the fidelity of the pattern reproduction by the photolithographic technique is greatly improved by virtue of the absence of any disorder at the interface between the undercoating and top coat layers. The advantage is further increased when the undercoating composition further comprises a photoextinctive agent, e.g. a dye, having absorptivity in the wave length region where the photosensitive resist of the top coat has sensitivity.

摘要翻译： 本发明的底涂层组合物可用作在基材表面上提供感光性抗蚀剂层的顶涂层的底涂层，其主要成分为通过羟基取代的二苯胺和 在氮原子上被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物。 获得的组合物的底漆对于施加在其上的外涂层溶液的侵蚀是高度抗性的，使得由于在底漆和面漆之间的界面处没有任何障碍，通过光刻技术的图案再现的保真度被大大提高 层。 当底涂层组合物还包含光致纤维素剂，例如， 染料，其表面涂层的光敏抗蚀剂具有敏感性的波长区域具有吸收性。

公开(公告)号：US4588675A

公开(公告)日：1986-05-13

申请号：US672764

申请日：1984-11-19

申请人： Hisashi Nakane ,  Akira Yokota ,  Mitsuo Yabuta ,  Wataru Ishii

发明人： Hisashi Nakane ,  Akira Yokota ,  Mitsuo Yabuta ,  Wataru Ishii

IPC分类号： C23C16/50 ,  C23F1/00 ,  C23F4/00 ,  G03F7/36 ,  G03F7/38 ,  H01L21/31 ,  G03F7/26

CPC分类号： G03F7/36 ,  G03F7/38 ,  Y10S430/168

摘要： A method for high fidelity patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. A photoresist layer which had been irradiated in a pattern with actinic rays is heated at a temperature in the range from 200.degree. to 500.degree. C. by applying heat to the surface of the substrate opposite to the surface bearing the photoresist layer, for example, by placing the substrate on a hot plate with the uncoated surface in contact with the hot plate. Subsequent exposure to plasma gas gives a patterned resist layer with a very high residual film thickness.

摘要翻译： 涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真图案化的方法。 用光化射线照射的光致抗蚀剂层在200〜500℃的温度范围内，通过向与该光致抗蚀剂层的表面相反的表面施加热，例如， 通过将基板放置在热板上，使未涂覆的表面与热板接触。 随后暴露于等离子体气体得到具有非常高的残余膜厚度的图案化抗蚀剂层。

公开(公告)号：US4702992A

公开(公告)日：1987-10-27

申请号：US708940

申请日：1985-03-06

申请人： Wataru Ishii ,  Shozo Miyazawa ,  Shinji Tsuchiya ,  Hisashi Nakane ,  Akira Yokota

发明人： Wataru Ishii ,  Shozo Miyazawa ,  Shinji Tsuchiya ,  Hisashi Nakane ,  Akira Yokota

IPC分类号： H01L21/027 ,  G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03C1/76 ,  G03C1/74

CPC分类号： G03F7/11 ,  G03F7/094

摘要： The undercoating composition of the invention, useful for providing an undercoating layer for a top coat of a photosensitive resist layer on a substrate surface, comprises, as a principal ingredient thereof, a condensation product obtained by the condensation reaction between a hydroxy-substituted diphenylamine and a melamine compound substituted on the nitrogen atoms with methylol groups and/or alkoxymethyl groups. The undercoating obtained of the composition is highly resistant against the attack by the overcoating solution applied thereon so that the fidelity of the pattern reproduction by the photolithographic technique is greatly improved by virtue of the absence of any disorder at the interface between the undercoating and top coat layers. The advantage is further increased when the undercoating composition further comprises a photoextinctive agent, e.g. a dye, having absorptivity in the wave length region where the photosensitive resist of the top coat has sensitivity.

摘要翻译： 本发明的底涂层组合物可用作在基材表面上提供感光性抗蚀剂层的顶涂层的底涂层，其主要成分为通过羟基取代的二苯胺和 在氮原子上被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物。 获得的组合物的底漆对于施加在其上的外涂层溶液的侵蚀是高度抗性的，使得由于在底漆和面漆之间的界面处没有任何障碍，通过光刻技术的图案再现的保真度被大大提高 层。 当底涂层组合物还包含光致纤维素剂，例如， 染料，其表面涂层的光敏抗蚀剂具有敏感性的波长区域具有吸收性。

公开(公告)号：US4610953A

公开(公告)日：1986-09-09

申请号：US614908

申请日：1984-05-29

申请人： Koichiro Hashimoto ,  Shirushi Yamamoto ,  Hisashi Nakane ,  Akira Yokota

发明人： Koichiro Hashimoto ,  Shirushi Yamamoto ,  Hisashi Nakane ,  Akira Yokota

IPC分类号： G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  G03C5/00

CPC分类号： G03F7/322

摘要： The invention provides an aqueous alkaline developer solution for a positive-type photoresist layer for pattern-wise treatment of the surface of a substrate, e.g., semiconductor wafer. The developer solution contains a tetraalkyl ammonium hydroxide, e.g., tetramethyl ammonium hydroxide, and a trialkyl hydroxyalkyl ammonium hydroxide, e.g., trimethyl hydroxyethyl ammonium hydroxide, as the essential ingredients and the temperature dependency of the development performance thereof is noticeably smaller than that of conventional developer solutions with respect to properties of the sensitivity of the photoresist and the thickness reduction of the photoresist layer in the unexposed areas, by virtue of the compensating temperature dependencies for these properties of these two ingredients for each other.

摘要翻译： 本发明提供了一种用于正型光致抗蚀剂层的碱性显影剂水溶液，用于对基板例如半导体晶片的表面进行图案化处理。 显影剂溶液含有四烷基氢氧化铵，例如四甲基氢氧化铵和三烷基羟基烷基氢氧化铵，例如三甲基羟乙基铵氢氧化物作为必需成分，并且其显影性能的温度依赖性显着小于常规显影剂 通过对这两种成分的这些性质的补偿温度依赖性，相对于光致抗蚀剂的灵敏度的性质和未曝光区域中的光致抗蚀剂层的厚度减小的解决方案。

公开(公告)号：US4590149A

公开(公告)日：1986-05-20

申请号：US672763

申请日：1984-11-19

申请人： Hisashi Nakane ,  Akira Yokota ,  Mitsuo Yabuta ,  Minoru Tsuda ,  Wataru Ishii

发明人： Hisashi Nakane ,  Akira Yokota ,  Mitsuo Yabuta ,  Minoru Tsuda ,  Wataru Ishii

IPC分类号： G03F7/38 ,  C23F1/00 ,  G03F7/30 ,  G03F7/36 ,  H01L21/027 ,  G03F7/26

CPC分类号： G03F7/36 ,  Y10S430/168

摘要： A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200.degree. to 500.degree. C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.

摘要翻译： 涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真精细图案化的方法。 在用光化射线照射之后，涂覆在基片上的光致抗蚀剂层在200℃至500℃的气氛中加热。随后将光致抗蚀剂层暴露于等离子体气体，得到精细图案化的抗蚀剂层，具有非常高的残留 膜比或膜厚度的非常小的降低。