公开(公告)号：US4268539A

公开(公告)日：1981-05-19

申请号：US960652

申请日：1978-11-14

申请人： Muneo Nakayama ,  Toshihiro Nishimura ,  Akira Hashimoto ,  Hisashi Nakane ,  Teruo Kimura

发明人： Muneo Nakayama ,  Toshihiro Nishimura ,  Akira Hashimoto ,  Hisashi Nakane ,  Teruo Kimura

IPC分类号： C03C17/25 ,  C03C17/27 ,  C04B41/50 ,  H01B1/08 ,  H01B13/00 ,  B05D5/12 ,  B05D1/02 ,  B05D3/02 ,  C03C17/23

CPC分类号： C04B41/5009 ,  C03C17/27 ,  H01B1/08 ,  C03C2217/215 ,  C03C2218/11 ,  C03C2218/322

摘要： A liquid coating composition for formation of a transparent conductive film, which comprises a solution of indium nitrate in a .beta.-diketone or a mixture of a .beta.-diketone and another organic solvent or a reaction product of indium nitrate with a .beta.-diketone, an activator and an organic solvent other than a .beta.-diketone, is disclosed.When this coating composition is coated on a substrate and the coated substrate is heat-treated at a temperature higher than about 350.degree. C., there can be obtained a transparent conductive film having excellent transparency, electrical conductivity and mechanical strength.

摘要翻译： 用于形成透明导电膜的液体涂料组合物，其包含硝酸铟在β-二酮或β-二酮与另一种有机溶剂的混合物中的溶液或硝酸铟与β-二酮的反应产物， 活化剂和除β-二酮以外的有机溶剂。 当将这种涂料组合物涂覆在基材上并且涂覆的基材在高于约350℃的温度下进行热处理时，可以获得具有优异的透明性，导电性和机械强度的透明导电膜。

公开(公告)号：US4694040A

公开(公告)日：1987-09-15

申请号：US902029

申请日：1986-08-25

申请人： Akira Hashimoto ,  Toshihiro Nishimura ,  Muneo Nakayama ,  Hisashi Nakane ,  Shozo Toda

发明人： Akira Hashimoto ,  Toshihiro Nishimura ,  Muneo Nakayama ,  Hisashi Nakane ,  Shozo Toda

IPC分类号： C08G77/00 ,  C08G77/06 ,  C09D183/04 ,  C09D183/14 ,  C08K5/05

CPC分类号： C09D183/14

摘要： The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.

摘要翻译： 本发明提供了一种用于通过用液体涂料组合物涂覆表面而在诸如半导体硅晶片或玻璃板的基材的表面上提供高耐热和耐腐蚀的涂膜的新颖方法，该液体涂料组合物是低聚物 作为单烃基硅烷三醇RSi（OH）3的部分脱水缩合产物的有机聚硅氧烷，任选地与二烃基硅烷二醇R2Si（OH）2的混合物，R是一价烃基，例如 甲基或苯基，然后烘烤涂布的基材，将涂层转化为固化的树脂膜。

公开(公告)号：US4474642A

公开(公告)日：1984-10-02

申请号：US514793

申请日：1983-07-18

申请人： Hisashi Nakane ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Hisashi Nakane ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： C23F1/00 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/3213 ,  C23F1/02 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/32139 ,  H01L21/312

摘要： The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.

摘要翻译： 本发明提供了一种用于在衬底的表面上提供铝膜的布线和电极的改进方法。 代替在金属膜上直接形成有机抗蚀剂层的常规方法，通过在金属膜和有机抗蚀剂之间设置主要由二氧化硅构成的辅助掩模层，可以显着提高图案的细度和精度 层; 并通过用含氟蚀刻气体通过有机抗蚀剂层的图案化掩模蚀刻辅助掩模层以形成图案化的掩蔽层，然后用含氯蚀刻气体通过蚀刻气体蚀刻金属膜，并进行图案蚀刻 图案化的辅助掩模层的掩模，然后最后去除剩余的辅助掩模层。

公开(公告)号：US4277525A

公开(公告)日：1981-07-07

申请号：US133092

申请日：1980-03-24

申请人： Muneo Nakayama ,  Toshihiro Nishimura ,  Hisashi Nakane ,  Shozo Toda ,  Yoshio Hotta ,  Mitsuaki Minato

发明人： Muneo Nakayama ,  Toshihiro Nishimura ,  Hisashi Nakane ,  Shozo Toda ,  Yoshio Hotta ,  Mitsuaki Minato

IPC分类号： C08G77/00 ,  C08G77/02 ,  C08G77/06 ,  C09D183/00 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  B05D3/02

CPC分类号： C09D183/14 ,  C09D183/02 ,  C09D183/04

摘要： Liquid compositions suitable for providing silica-based coating films on to various substrate surfaces are prepared by the reaction of an alkoxy-containing silane, a lower carboxylic acid and an alcohol in the presence of a reaction accelerator which is an organic acid different from the above mentioned lower carboxylic acid. The reaction proceeds very smoothly even in the absence of any halogen-containing compounds, and the resultant liquid coating compositions are free from the problem of corrosion due to the presence of a halogen-containing ingredient.

摘要翻译： 适用于在各种基材表面上提供二氧化硅基涂膜的液体组合物是通过含有烷氧基的硅烷，低级羧酸和醇在与上述不同的有机酸的反应促进剂存在下反应来制备的 提到的低级羧酸。 即使不存在任何含卤素化合物，反应也非常顺利，所得到的液体涂料组合物由于含卤素成分的存在而没有腐蚀的问题。

公开(公告)号：US4868096A

公开(公告)日：1989-09-19

申请号：US92485

申请日：1987-09-03

申请人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

发明人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

IPC分类号： G03F7/11

CPC分类号： G03F7/11

摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

摘要翻译： 当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。 在主要由氧组成的气体的气氛中。 等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜 图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

公开(公告)号：US4527865A

公开(公告)日：1985-07-09

申请号：US579006

申请日：1984-02-15

申请人： Junichi Washo ,  Takaaki Miyazaki ,  Mitsuo Ishii ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Junichi Washo ,  Takaaki Miyazaki ,  Mitsuo Ishii ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： G02F1/17 ,  G02F1/15 ,  G02F1/153 ,  G09F9/30

CPC分类号： G02F1/1533

摘要： An electrochromic display device comprising a transparent substrate and a counter substrate sealingly joined together to define a cell for accommodating an electrolyte, a transparent electroconductive layer on an inner surface of the transparent substrate, a display electrode layer overlaying the transparent electroconductive layer and a counter electrode layer deposited on an inner surface of the counter substrate is featured by the provision of a transparent insulating layer between the transparent substrate and the transparent electroconductive layer.

摘要翻译： 一种电致变色显示装置，包括透明基板和对置基板，密封地连接在一起以限定用于容纳电解质的单元，在透明基板的内表面上的透明导电层，覆盖透明导电层的显示电极层和对置电极 在对置基板的内表面上沉积的层的特征在于在透明基板和透明导电层之间设置透明绝缘层。

公开(公告)号：US5156884A

公开(公告)日：1992-10-20

申请号：US638016

申请日：1991-01-07

申请人： Katsuya Tanitsu ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Katsuya Tanitsu ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： C23C18/14

CPC分类号： C23C18/14

摘要： The inventive method comprises the steps of coating the substrate surface with a coating solution containing .beta.-diketone complex of a metallic element in an aprotic polar solvent, drying and irradiating the coating film on the surface with ultraviolet light, optionally, followed by a heat treatment to form an electrically insulating oxidized metal film on the surface. By virtue of the ultraviolet irradiation, the oxidized metal film can be imparted with increased insulation even by omitting the heat treatment or by decreasing the temperature of the heat treatment so that the adverse influences on the characteristics of the substrate can be minimized.

摘要翻译： 本发明的方法包括以下步骤：在非质子极性溶剂中用含有金属元素的β-二酮配合物的涂布溶液涂覆基材表面，然后用紫外线干燥并在表面上照射涂膜，然后进行热处理 以在表面上形成电绝缘的氧化金属膜。 通过紫外线照射，即使省略热处理，也可以通过降低热处理的温度，能够赋予氧化金属膜更高的绝缘性，从而可以使对基板的特性的不利影响最小化。

公开(公告)号：US4894254A

公开(公告)日：1990-01-16

申请号：US272083

申请日：1988-11-16

申请人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Akira Uehara ,  Isamu Hijikata

发明人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Akira Uehara ,  Isamu Hijikata

IPC分类号： B05D3/02 ,  B05D3/06 ,  B05D3/14 ,  B29C59/14 ,  C09D183/04 ,  G02F1/1337 ,  H01L21/312

CPC分类号： C08J7/123 ,  B05D3/145 ,  B29C59/14 ,  C09D183/04 ,  G02F1/133711 ,  H01L21/3121 ,  B05D2518/10 ,  B05D3/02 ,  C08J2383/04

摘要： A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.

摘要翻译： 通过在低于150℃的温度下干燥涂覆在基材上的溶液来形成硅氧烷膜，以在基材上形成硅酮膜，在氧等离子体中处理硅酮膜，并加热在等离子体中处理的硅酮薄膜 温度为150℃以上。

公开(公告)号：US4793862A

公开(公告)日：1988-12-27

申请号：US92510

申请日：1987-09-03

申请人： Tsutomu Ishikawa ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Tsutomu Ishikawa ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： H01L21/22 ,  H01L21/225 ,  C09K3/00

CPC分类号： H01L21/2255 ,  H01L21/2225

摘要： An improved silica-based film-forming composition for diffusion of antimony in the doping works of semiconductors is proposed which comprises an organic solvent, a partial hydrolysis product of an alkoxy silane compound and an antimony compound dissolved in the organic solvent. The antimony compound in the inventive composition is an alkoxy antimony or aryloxy antimony compound so that the problem of corrosion of the coating apparatus can be entirely avoided without decreasing the dopant concentration in the semiconductor substrate, as well as to provide a film-forming composition which is advantageously stable in storage.

摘要翻译： 提出了一种改进的二氧化硅基成膜组合物，用于在半导体的掺杂工艺中扩散锑，其包括有机溶剂，烷氧基硅烷化合物的部分水解产物和溶解在有机溶剂中的锑化合物。 本发明组合物中的锑化合物是烷氧基锑或芳氧基锑化合物，从而可以在不降低半导体衬底中的掺杂剂浓度的情况下完全避免涂覆装置的腐蚀问题，以及提供一种成膜组合物， 有利地在储存中稳定。

公开(公告)号：US4900582A

公开(公告)日：1990-02-13

申请号：US197021

申请日：1988-05-20

申请人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Eiichi Kashiwagi ,  Isamu Hijikata

发明人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Eiichi Kashiwagi ,  Isamu Hijikata

IPC分类号： C04B41/80 ,  C01B33/12 ,  C23C18/12 ,  H01L21/316 ,  H01L21/56 ,  H01L23/29

CPC分类号： H01L23/296 ,  H01L21/56 ,  H01L2924/0002 ,  H01L2924/09701

摘要： A coating solution for forming a silica-based film, having a given viscosity, is coated on a substrate such as a silicon wafer, this coating solution is dried to form a silica-based film, and this silica-based film is exposed to ultraviolet radiation in an atmosphere containing ozone at room temperature or while heating it preferably at a temperature of not more than 300.degree. C., particularly at a temperature of from 50.degree. to 200.degree. C., by means of a heating member such as a hot plate.The film quality of the silica-based film can be improved by exposing it to ultraviolet radiation in the atmosphere containing ozone.

摘要翻译： 将具有给定粘度的二氧化硅基膜形成用涂布液涂布在硅晶片等基板上，将该涂布液干燥，形成二氧化硅系膜，将该二氧化硅系膜暴露于紫外线 在室温下含有臭氧的气氛中或在不高于300℃，特别是在50℃至200℃的温度下，通过加热构件如热 盘子。 二氧化硅基膜的膜质量可以通过在含有臭氧的大气中暴露于紫外线而得到改善。