SHORT PULSE FIBER LASER FOR LTPS CRYSTALLIZATION

    公开(公告)号:US20200043736A1

    公开(公告)日:2020-02-06

    申请号:US16598210

    申请日:2019-10-10

    Applicant: nLIGHT, Inc.

    Abstract: Laser pulses from pulsed fiber lasers are directed to an amorphous silicon layer to produce a polysilicon layer comprising a disordered arrangement of crystalline regions by repeated melting and recrystallization. Laser pulse durations of about 0.5 to 5 ns at wavelength range between about 500 nm and 1000 nm, at repetition rates of 10 kHz to 10 MHz can be used. Line beam intensity uniformity can be improved by spectrally broadening the laser pulses by Raman scattering in a multimode fiber or by applying varying phase delays to different portions of a beam formed with the laser pulses to reduce beam coherence.

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