摘要:
A hydraulic drive system is provided with a generator 8 for outputting electricity corresponding to a rotation speed of an engine 7, an electric motor 11 drivable responsive to the electricity from the generator 8, hydraulic pumps 12a, 12b drivable by the electric motor 11, truck-body elevating cylinders 6 for pivoting a truck body 5 in an up-and-down direction, and a stroke detector 14 for detecting a stroke of the control apparatus of the truck-body elevating cylinders 6, and is also provided with a controller 19 for performing control of engine rotation speed. The controller 19 includes a motor electric-power computing means 19a for determining electric power for the electric motor 11, which corresponds to the stroke detected by the stroke detector 14, and a discrimination means 19b for discriminating whether or not the electricity from the generator 8 has become greater than the thus-determined electric power for the electric motor 1.
摘要:
In a hydraulic drive device for vertical pivoting movement of a load carrying platform, a first directional control valve has only three switchover positions, including a neutral position relating to operation of stopping and holding a load carrying platform, a switching position relating to operation of lifting the load carrying platform, and a switch over position relating to operation of forced lowering of the load carrying platform. A second directional control valve has only three switchover positions, including a neutral position, a switching position, and a switchover position relating to operation of allowing the load carrying platform to fall by its own weight. The device includes a first on-off valve, a second on-off valve, and a third on-off valve that are proportional control solenoid valves for switching an appropriate one of the first and second directional control valves.
摘要:
A secondary cleaning device has a cleaning brush, collection roller, and controller. The cleaning brush is driven by a drive mechanism and thereby rotates in a state that brush fibers thereof are contacting with a secondary transfer belt to collect toner on the secondary transfer belt. The collection roller is driven by another drive mechanism and thereby rotates in a state contacting with the cleaning brush to collect toner from the cleaning brush. The collection roller rotates in such a manner that the collection roller and the cleaning brush move in the same direction with each other at a contact area between the collection roller and the cleaning brush. The controller controls the drive mechanism such that the circumferential speed ratio of the collection roller with respect to the cleaning brush is greater than one and smaller than two.
摘要:
A method of producing a semiconductor device includes the steps of forming a protrusion electrode on a semiconductor chip; and sealing the protrusion electrode and a semiconductor substrate with a resin layer. The method further includes the steps of polishing the resin layer until an upper surface of the protrusion electrode is exposed; polishing the exposed upper surface of the protrusion electrode; and forming a solder terminal on the polished upper surface of the protrusion electrode.
摘要:
A resin composite copper foil comprising a copper foil and a resin layer containing a block copolymer polyimide and a maleimide compound, the resin layer being formed on one surface of the copper foil, a production process thereof, a copper-clad laminate using the resin composite copper foil, a production process of a printed wiring board using the copper-clad laminate, and a printed wiring board obtained by the above process.
摘要:
A semiconductor device includes a silicon substrate having first and second surfaces, in which a wiring pattern is formed on the first surface; a first resin layer formed over the first surface of the silicon substrate; and a second resin layer formed over the second surface of the silicon substrate. The silicon substrate has a thickness less than 150 μm, and each of the first and second resin layers has a thickness larger than that of the silicon substrate.
摘要:
An insulating film is formed on a substrate selected from a group containing a BT resin substrate and an epoxy resin substrate. Copper wirings and copper posts including wirings are formed on the insulating film. Plasma processing is effected on exposed surfaces of the insulating film, copper wirings and copper posts provided over the semiconductor substrate, using nitrogen-type gas. An encapsulating portion is formed which covers and seals the exposed surfaces.
摘要:
A manufacturing method of a semiconductor device capable of mounting semiconductor elements having different functions without increasing the area of the semiconductor device, wherein a part of a wiring is formed at the side surface of a semiconductor element, and bump electrodes are formed so as to be nearly on a same plane as the wiring formed at the side surface of the semiconductor element. At least a part of ball electrodes are formed so as to connect electrically to the wiring at the side surface of the semiconductor element, the side surface of the semiconductor element is sealed with resin exposing the wiring, and the confronting surface of the circuit forming surface is sealed with resin.
摘要:
A clamp device for mounting elongated components such as pipes on a support such as a car body comprises a first clamp to be mounted on the support and a second clamp to be mounted in a recess in the first clamp. The clamp device is constructed to permit limited transverse movement of the second clamp in the recess, to accommodate bending or curving of elongated components held by the second clamp. The first clamp may also hold elongated components.
摘要:
A method of manufacturing a semiconductor device includes forming copper conductive patterns on an insulating layer formed on a semiconductor base, ashing the whole insulating layer including the copper conductive patterns at a temperature at which no oxide film is formed on the copper conductive patterns, and thereafter baking the whole insulating layer including the copper conductive patterns in an oxidative atmosphere at a temperature range of about 150° C. to about 200° C. After the baking step, an encapsulating resin is formed on the insulating layer including the copper conductive patterns.