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公开(公告)号：US20210391695A1
公开(公告)日：2021-12-16
申请号：US17292197
申请日：2019-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element's connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than IΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.
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公开(公告)号：US11011887B2
公开(公告)日：2021-05-18
申请号：US16471330
申请日：2017-12-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.
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公开(公告)号：US20200091681A1
公开(公告)日：2020-03-19
申请号：US16471330
申请日：2017-12-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.
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公开(公告)号：US10396106B2
公开(公告)日：2019-08-27
申请号：US15594482
申请日：2017-05-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Eichler , Andre Somers , Harald Koenig , Bernhard Stojetz , Andreas Loeffler , Alfred Lell
IPC: H01L27/12 , H01L21/02 , H01L21/20 , H01L21/762 , H01L21/268 , H01L21/3105 , H01L21/324 , H01S5/22 , H01S5/223 , H01S5/20
Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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公开(公告)号：US20190235261A1
公开(公告)日：2019-08-01
申请号：US16320550
申请日：2017-07-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Löffler , Harald König , André Somers , Clemens Vierheilig
IPC: G02B27/22 , H04N13/305
CPC classification number: G02B27/2214 , G02B27/2235 , G02B27/2264 , H04N13/305 , H04N13/307 , H04N13/32
Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.
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Patent Agency Ranking
公开(公告)号：US20190199056A1
公开(公告)日：2019-06-27
申请号：US16311868
申请日：2017-06-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Eichler , Sven Gerhard , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.
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公开(公告)号：US09831632B2
公开(公告)日：2017-11-28
申请号：US14533292
申请日：2014-11-05
Applicant: OSRAM Opto Semiconductors GmbH , OSRAM GmbH
Inventor： Markus Horn , Andreas Breidenassel , Karsten Auen , Bernhard Stojetz , Thomas Schwarz
CPC classification number: H01S5/02208 , H01L2924/19107 , H01S5/02216 , H01S5/02236 , H01S5/02248 , H01S5/02272 , H01S5/02276 , H01S5/02296 , H01S5/02469 , H01S5/02476 , H01S5/4018 , H01S5/4025 , H01S5/4031 , H01S5/405
Abstract: A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.
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公开(公告)号：US20160204575A1
公开(公告)日：2016-07-14
申请号：US14910813
申请日：2014-08-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Markus Horn , Bernhard Stojetz
CPC classification number: H01S5/02469 , H01S5/0222 , H01S5/02248 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/4018 , H01S5/4031
Abstract: A laser component includes a laser chip having a top side, an underside, a first side surface and a second side surface, which are oriented parallel to a resonator of the laser chip, wherein an underside of the laser chip is arranged in a manner bearing on a carrier, a top side of the laser chip is arranged in a manner bearing on a further carrier, the laser chip is hermetically tightly encapsulated between the carrier and the further carrier, a second electrical contact pad of the laser chip, said second electrical contact pad being formed on the top side of the laser chip, electrically conductively connects to a second electrical mating contact pad formed on the further carrier, and the first side surface of the laser chip thermally conductively connects to a heat sink.
Abstract translation: 激光组件包括具有平行于激光芯片的谐振器的顶侧，下侧，第一侧表面和第二侧表面的激光芯片，其中激光芯片的下侧以轴承方式布置 在载体上，激光芯片的顶侧以与另一个载体相关的方式布置，激光芯片气密地封装在载体和另外的载体之间，激光芯片的第二电接触焊盘，所述第二电极 接触垫形成在激光芯片的顶侧上，导电地连接到形成在另一个载体上的第二电配合接触焊盘，并且激光芯片的第一侧表面热传导地连接到散热器。
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公开(公告)号：US20140133504A1
公开(公告)日：2014-05-15
申请号：US14031991
申请日：2013-09-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler
IPC: H01S5/10
CPC classification number: H01S5/22 , H01S5/0202 , H01S5/0203 , H01S5/0207 , H01S5/0213 , H01S5/0653 , H01S5/2022 , H01S5/3013 , H01S5/34313 , H01S5/34333 , H01S2301/17
Abstract: A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.
Abstract translation: 半导体激光二极管包括基板。 衬底上的半导体层序列具有至少一个有源层，被设计用于产生在操作期间沿发射方向发射的激光。 至少一个过滤层具有平行于有源层的主延伸面的主延伸平面，并且被设计成除了激光之外散射和/或吸收在半导体层序列和/或衬底中传播的光 光。
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公开(公告)号：US11581702B2
公开(公告)日：2023-02-14
申请号：US16608552
申请日：2018-05-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Christoph Eichler , Alfred Lell , Sven Gerhard
IPC: H01S3/0941 , H01S5/04 , H01S3/063 , H01S5/026 , H01S5/028 , H01S5/10 , H01S5/042 , H01L33/00 , H01S3/16 , H01S5/02 , H01S5/22 , H01S5/34 , H01S5/343 , H01S5/0234
Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.
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