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98 条记录 (耗时 0.025 秒)

    Vertically-integrated waveguide photodetector apparatus and related coupling methods
    11.
    发明授权
    Vertically-integrated waveguide photodetector apparatus and related coupling methods 有权
    垂直集成波导光电探测器及相关耦合方法

    公开(公告)号：US07305157B2

    公开(公告)日：2007-12-04

    申请号：US11269355

    申请日：2005-11-08

    申请人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B6/4201 ,  G02B2006/12061

    摘要： High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

    摘要翻译： 具有与CMOS处理技术通用兼容的方法制造具有与光电检测器密集地集成并有效耦合的光波导的高速光电子器件。 在各种实施方案中，波导基本上由单晶硅组成，并且光电检测器包含或基本上由外延生长的锗或锗浓度超过约90％的硅 - 锗合金构成。

    Tunable chromatic dispersion compensation
    12.
    发明授权
    Tunable chromatic dispersion compensation 有权
    可调色散补偿

    公开(公告)号：US07190853B2

    公开(公告)日：2007-03-13

    申请号：US10178965

    申请日：2002-06-25

    申请人： John D. Joannopoulos ,  Shanhui Fan ,  Michal Lispon ,  Kevin M. Chen ,  Lionel C. Kimerling

    发明人： John D. Joannopoulos ,  Shanhui Fan ,  Michal Lispon ,  Kevin M. Chen ,  Lionel C. Kimerling

    IPC分类号： G02B6/26

    CPC分类号： H04B10/2519

    摘要： A system for dispersion compensation is provided including a plurality of optical cavities with each including a specific resonant frequency and resonant linewidth. At least one coupling element interconnects the optical cavities. The at least one coupling element defines the coupling strength between the cavities. The optical cavities are interconnected with the at least one coupled element that forms a multi-cavity structure. The multi-cavity structure generates appropriate dispersion properties for dispersion compensation purposes.

    摘要翻译： 提供了一种用于色散补偿的系统，包括多个光腔，每个具有特定的谐振频率和谐振线宽。 至少一个耦合元件互连光腔。 所述至少一个联接元件限定所述空腔之间的耦合强度。 光学空腔与形成多腔结构的至少一个耦合元件互连。 多腔结构为色散补偿目的产生适当的色散特性。

    Methods of altering the resonance of waveguide micro-resonators
    14.
    发明授权
    Methods of altering the resonance of waveguide micro-resonators 有权
    改变波导微谐振器谐振的方法

    公开(公告)号：US06925226B2

    公开(公告)日：2005-08-02

    申请号：US10632247

    申请日：2003-08-01

    申请人： Desmond R. Lim ,  Lionel C. Kimerling

    发明人： Desmond R. Lim ,  Lionel C. Kimerling

    IPC分类号： G02B26/00 ,  G02B6/10 ,  G02B6/12 ,  G02B6/122 ,  G02B6/126 ,  G02B6/132 ,  G02B6/35 ,  G02F1/01 ,  G02F1/313 ,  G02B6/26

    CPC分类号： G02B6/1223 ,  G02B6/105 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/126 ,  G02B6/132 ,  G02B6/3536 ,  G02F1/011 ,  G02F1/0134 ,  G02F1/0147 ,  G02F1/3132 ,  G02F2203/15

    摘要： Methods of tuning, switching or modulating, or, in general, changing the resonance of waveguide micro-resonators. Changes in the resonance can be brought about, permanently or temporarily, by changing the size of the micro-resonator with precision, by changing the local physical structure of the device or by changing the effective and group indices of refraction of the mode in the micro-resonator. Further changing the asymmetry of the index profile around a waveguide can alter the birefringence of the waveguide and allows one to control the polarization in the waveguide. This change in index profile may be used to change the polarization dependence or birefringence of the resonators.

    摘要翻译： 调谐，切换或调制的方法，或一般来说，改变波导微谐振器的谐振。 可以通过改变微型谐振器的尺寸，通过改变器件的局部物理结构或通过改变微型谐振器的有效和组折射率来改变谐振的变化，永久或暂时地改变微谐振器的尺寸 再生器 进一步改变波导周围的折射率分布的不对称可以改变波导的双折射，并允许波导管中的偏振。 折射率分布的这种改变可以用于改变谐振器的偏振相关性或双折射率。

    Low voltage tunable photonic crystal with large defects as wavelength routing
    15.
    发明授权
    Low voltage tunable photonic crystal with large defects as wavelength routing 有权
    具有较大缺陷的低电压可调光子晶体作为波长路由

    公开(公告)号：US06859321B2

    公开(公告)日：2005-02-22

    申请号：US10402504

    申请日：2003-03-28

    申请人： Lionel C. Kimerling ,  Kazumi Wada ,  Yasha Yi

    发明人： Lionel C. Kimerling ,  Kazumi Wada ,  Yasha Yi

    IPC分类号： G02B6/122 ,  G02B6/34 ,  G02B26/00 ,  H01S5/183 ,  G02B27/00

    CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B26/001

    摘要： A photonic bandgap device includes a first mirror region including alternating layers of different materials. A second mirror region includes alternating layers of different materials. An air gap cavity region is positioned between the first mirror region and second region. The air gap cavity changes its thickness when a voltage is applied so that the device is tuned to a particular resonant wavelength.

    摘要翻译： 光子带隙装置包括包括不同材料的交替层的第一反射镜区域。 第二镜面区域包括不同材料的交替层。 气隙腔区域位于第一反射镜区域和第二区域之间。 当施加电压时，气隙腔改变其厚度，使得器件被调谐到特定的谐振波长。

    Low-loss waveguide and method of making same
    16.
    发明授权
    Low-loss waveguide and method of making same 有权
    低损耗波导及其制造方法

    公开(公告)号：US06850683B2

    公开(公告)日：2005-02-01

    申请号：US09876392

    申请日：2001-06-07

    申请人： Kevin K. Lee ,  Desmond R. Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    发明人： Kevin K. Lee ,  Desmond R. Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B6/10

    CPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B2006/12176

    摘要： A method of reducing the scattering losses that involves smoothing of the core/cladding interface and/or change of waveguide geometry in high refractive index difference waveguides. As an example, the SOI-based Si/SiO2 waveguides are subjected to an oxidation reaction at high temperatures, after the waveguide patterning process. By oxidizing the rough silicon core surfaces after the patterning process, the core/cladding interfaces are smoothened, reducing the roughness scattering in waveguides.

    摘要翻译： 降低散射损耗的方法，其涉及在高折射率差分波导中平滑芯/包层界面和/或波导几何形状的变化。 作为示例，在波导图案化工艺之后，SOI基Si / SiO 2波导在高温下经受氧化反应。 通过在图案化处理之后氧化粗糙的硅芯表面，使芯/包层界面平滑化，减少波导中的粗糙度散射。

    Cyclic thermal anneal for dislocation reduction
    18.
    发明授权
    Cyclic thermal anneal for dislocation reduction 有权
    循环热退火脱位减少

    公开(公告)号：US06635110B1

    公开(公告)日：2003-10-21

    申请号：US09603572

    申请日：2000-06-23

    申请人： Hsin-Chiao Luan ,  Lionel C. Kimerling

    发明人： Hsin-Chiao Luan ,  Lionel C. Kimerling

    IPC分类号： C30B100

    CPC分类号： C30B33/00 ,  C30B29/08 ,  C30B29/16 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/28255 ,  H01L21/31662 ,  H01L21/324

    摘要： The invention provides processes for producing a very low dislocation density in heterogeneous epitaxial layers with a wide range of thicknesses, including a thickness compatible with conventional silicon CMOS processing. In a process for reducing dislocation density in a semiconductor material formed as an epitaxial layer upon a dissimilar substrate material, the epitaxial layer and the substrate are heated at a heating temperature that is less than about a characteristic temperature of melting of the epitaxial layer but greater than about a temperature above which the epitaxial layer is characterized by plasticity, for a first time duration. Then the epitaxial layer and the substrate are cooled at a cooling temperature that is lower than the about the heating temperature, for a second time duration. These heating and cooling steps are carried out a selected number of cycles to reduce the dislocation density of the epitaxial layer.

    摘要翻译： 本发明提供了在具有宽范围厚度的异质外延层中产生非常低的位错密度的方法，包括与常规硅CMOS处理兼容的厚度。 在用于减少在不同的衬底材料上形成为外延层的半导体材料中的位错密度的方法中，外延层和衬底在小于约外延层的特征熔化温度但加大的加热温度下被加热 高于该温度，其外延层的特征在于可塑性，持续第一时间。 然后将外延层和衬底在低于约加热温度的冷却温度下冷却第二持续时间。 这些加热和冷却步骤以选定数量的循环进行以减少外延层的位错密度。

    Oxidation of silicon on germanium
    19.
    发明授权
    Oxidation of silicon on germanium 有权
    锗在锗上的氧化

    公开(公告)号：US06352942B1

    公开(公告)日：2002-03-05

    申请号：US09603269

    申请日：2000-06-23

    申请人： Hsin-Chiao Luan ,  Lionel C. Kimerling

    发明人： Hsin-Chiao Luan ,  Lionel C. Kimerling

    IPC分类号： H01L2131

    CPC分类号： C30B33/00 ,  C30B29/08 ,  C30B29/16 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/28255 ,  H01L21/31662 ,  H01L21/324

    摘要： The invention provides processes for producing a high-quality silicon dioxide layer on a germanium layer. In one example process, a layer of silicon is deposited on the germanium layer, and the silicon layer is exposed to dry oxygen gas at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. In a further example process, the silicon layer is exposed to water vapor at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. It can be preferred that the exposure to dry oxygen gas or to water vapor be carried out in an oxidation chamber at a chamber pressure that is no less than ambient pressure. In one example, the chamber pressure is above about 2 atm. The temperature at which the silicon layer is exposed to the dry oxygen gas is preferably above about 500° C., more preferably above about 600° C., even more preferably above about 700° C., and most preferably above about 800° C.

    摘要翻译： 本发明提供了在锗层上生产高品质二氧化硅层的方法。 在一个示例性过程中，在锗层上沉积硅层，并且硅层在足以基本上仅通过热能引起硅层氧化的温度下暴露于干氧气。 在另一示例性方法中，硅层在足以基本上仅通过热能引起硅层氧化的温度下暴露于水蒸汽。 优选的是，在不低于环境压力的室压力下，在氧化室中进行干燥氧气或水蒸气的暴露。 在一个示例中，室压力高于约2atm。 硅层暴露于干氧气的温度优选高于约500℃，更优选高于约600℃，甚至更优选高于约700℃，最优选高于约800℃ 。