公开(公告)号：US07345324B2

公开(公告)日：2008-03-18

申请号：US11177670

申请日：2005-07-07

申请人： David P. Bour ,  Nathan F. Gardner ,  Werner K. Goetz ,  Stephen A. Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher P. Kocot ,  Mark R. Hueschen

发明人： David P. Bour ,  Nathan F. Gardner ,  Werner K. Goetz ,  Stephen A. Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher P. Kocot ,  Mark R. Hueschen

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

摘要翻译： 根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。 有源区包括作为量子阱层或阻挡层的第二半导体层。 第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。 发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

公开(公告)号：US07880186B2

公开(公告)日：2011-02-01

申请号：US11682276

申请日：2007-03-05

申请人： Nathan F. Gardner ,  Gangyi Chen ,  Werner K. Goetz ,  Michael R. Krames ,  Gerd O. Mueller ,  Yu-Chen Shen ,  Satoshi Watanabe

发明人： Nathan F. Gardner ,  Gangyi Chen ,  Werner K. Goetz ,  Michael R. Krames ,  Gerd O. Mueller ,  Yu-Chen Shen ,  Satoshi Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/325

摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm−3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.

摘要翻译： 在器件中，III族氮化物发光层设置在n型区域和p型区域之间。 设置在n型区域和发光层之间的第一间隔层被掺杂到6×10 18 cm -3和5×10 19 cm -3之间的掺杂剂浓度。 设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到小于6×10 18 cm -3的掺杂剂浓度。

公开(公告)号：US06635904B2

公开(公告)日：2003-10-21

申请号：US09823823

申请日：2001-03-29

申请人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

发明人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/06 ,  H01S5/0212 ,  H01S5/32341 ,  H01S5/3409

摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

公开(公告)号：US06489636B1

公开(公告)日：2002-12-03

申请号：US09823732

申请日：2001-03-29

申请人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

发明人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/06 ,  H01S5/0212 ,  H01S5/32341 ,  H01S5/3409

摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

公开(公告)号：US08334155B2

公开(公告)日：2012-12-18

申请号：US11237164

申请日：2005-09-27

申请人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

发明人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

公开(公告)号：US20120214291A1

公开(公告)日：2012-08-23

申请号：US13458587

申请日：2012-04-27

申请人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

发明人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

IPC分类号： H01L21/762

CPC分类号： H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.

摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。

公开(公告)号：US20110180911A1

公开(公告)日：2011-07-28

申请号：US13081788

申请日：2011-04-07

申请人： Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

发明人： Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L33/0079 ,  H01L21/6835 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1892 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L2221/68359 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.

摘要翻译： 本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。 所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。 通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。 本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

公开(公告)号：US20090261361A1

公开(公告)日：2009-10-22

申请号：US12495464

申请日：2009-06-30

申请人： Yu-Chen Shen ,  Nathan F. Gardner ,  Satoshi Watanabe ,  Michael R. Krames ,  Gerd O. Mueller

发明人： Yu-Chen Shen ,  Nathan F. Gardner ,  Satoshi Watanabe ,  Michael R. Krames ,  Gerd O. Mueller

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/325

摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.

摘要翻译： III族氮化物发光层设置在双异质结构中的n型区域和p型区域之间。 III族氮化物发光层的至少一部分具有渐变组成。

公开(公告)号：US20090230381A1

公开(公告)日：2009-09-17

申请号：US12433106

申请日：2009-04-30

申请人： Michael R. KRAMES ,  Nathan F. Gardner ,  Frank M. Steranka

发明人： Michael R. KRAMES ,  Nathan F. Gardner ,  Frank M. Steranka

IPC分类号： H01L33/00

CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

公开(公告)号：US07244630B2

公开(公告)日：2007-07-17

申请号：US11100080

申请日：2005-04-05

申请人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

发明人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

IPC分类号： H01L21/00

CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。