公开(公告)号：US06274058B1

公开(公告)日：2001-08-14

申请号：US09347236

申请日：1999-07-02

Applicant: Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

Inventor： Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

IPC: H05H100

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/511 ,  C23C16/52 ,  H01J9/38 ,  H01J37/32192 ,  H01J37/32357 ,  Y10S438/905

Abstract: A processing chamber cleaning method is described which utilizes microwave energy to remotely generate a reactive species to be used alone or in combination with an inert gas to remove deposits from a processing chamber. The reactive species can remove deposits from a first processing region at a first pressure and then remove deposits from a second processing region at a second pressure. Also described is a cleaning process utilizing remotely generated reactive species in a single processing region at two different pressures. Additionally, different ratios of reactive gas and inert gas may be utilized to improve the uniformity of the cleaning process, increase the cleaning rate, reduce recombination of reactive species and increase the residence time of reactive species provided to the processing chamber.

Abstract translation: 描述了一种处理室清​​洁方法，其利用微波能量远程产生要单独使用或与惰性气体组合使用的反应物质以从处理室去除沉积物。 反应性物质可以在第一压力下从第一处理区域去除沉积物，然后在第二压力下从第二处理区域去除沉积物。 还描述了在两个不同压力下在单个处理区域中利用远程产生的活性物质的清洁方法。 此外，可以使用不同比例的反应气体和惰性气体来改善清洁过程的均匀性，提高清洗速率，减少活性物质的复合并增加提供给处理室的反应物种的停留时间。

公开(公告)号：US5709772A

公开(公告)日：1998-01-20

申请号：US625485

申请日：1996-03-29

Applicant: Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

Inventor： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  C23F1/00

CPC classification number: C23C16/52 ,  C23C16/02 ,  C23C16/4405

Abstract: An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

Abstract translation: 一种用于限制半导体制造工艺中的金属蚀刻后剩余残留物的装置和方法，其中将不含等离子体的含卤素气体注入到处理室中。 然后在金属沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体的残留物。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

公开(公告)号：US07745333B2

公开(公告)日：2010-06-29

申请号：US12179002

申请日：2008-07-24

Applicant: Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

Inventor： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US20080115026A1

公开(公告)日：2008-05-15

申请号：US11553609

申请日：2006-10-27

Applicant: James Norris Dieffenderfer ,  Anand Krishnamurthy ,  Clint Wayne Mumford ,  Jason Lawrence Panavich ,  Ketan Vitthal Patel ,  Ravi Rajagopalan ,  Thomas Philip Speier

Inventor： James Norris Dieffenderfer ,  Anand Krishnamurthy ,  Clint Wayne Mumford ,  Jason Lawrence Panavich ,  Ketan Vitthal Patel ,  Ravi Rajagopalan ,  Thomas Philip Speier

IPC: G01R31/28

CPC classification number: G01R31/31707 ,  G01R31/3187

Abstract: The content and order of a predetermined sequence of hard-coded and/or quasi-programmable test patterns may be altered during a Built-In Self-Test (BIST) routine. As such, knowledge gained post design completion may be reflected in the selection and arrangement of available tests to be executed during a BIST routine. In one embodiment, a sequence of hard-coded and/or quasi-programmable tests is executed during a BIST routine by receiving test ordering information for the sequence of tests and executing the sequence of tests in an order indicated by the test ordering information. A corresponding BIST circuit comprises a storage element and a state machine. The storage element is configured to store test ordering information for the sequence of tests. The state machine is configured to execute the sequence of tests in an order indicated by the test ordering information.

Abstract translation: 硬编码和/或准可编程测试图案的预定顺序的内容和顺序可以在内置自检（BIST）程序期间改变。 因此，获得后期设计完成的知识可能反映在BIST程序中执行的可用测试的选择和排列。 在一个实施例中，在BIST程序期间通过接收测试序列的测试排序信息并按照测试顺序信息所示的顺序执行测试序列来执行硬编码和/或准可编程测试序列。 相应的BIST电路包括存储元件和状态机。 存储元件被配置为存储测试序列的测试排序信息。 状态机被配置为按照测试顺序信息指示的顺序执行测试序列。

公开(公告)号：US20060009034A1

公开(公告)日：2006-01-12

申请号：US11038592

申请日：2005-01-19

Applicant: Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

Inventor： Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US06789355B2

公开(公告)日：2004-09-14

申请号：US10403170

申请日：2003-03-31

Applicant: Ravi Rajagopalan

Inventor： Ravi Rajagopalan

IPC: A01G902

CPC classification number: A01G9/024

Abstract: A liner for use in a horticultural planter contains an integral water tray which is located between inner and outer fibrous layers of a liner. The water tray extends from a bottom surface of the liner to a peripheral top edge. The water tray is integral with the liner and located between outer and inner fibrous layers. The water tray extends also from the bottom surface to a peripheral edge which is spaced apart from the peripheral top edge of the liner. An overflow region is therefore formed between the peripheral top edge of the liner and the peripheral edge of the water tray.

公开(公告)号：US06174373B1

公开(公告)日：2001-01-16

申请号：US09476917

申请日：2000-01-04

Applicant: Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

Inventor： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC: C23C1600

CPC classification number: C23C16/52 ,  C23C16/02 ,  C23C16/4405

Abstract: An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

Abstract translation: 公开了一种用于限制在半导体制造工艺中蚀刻金属后残留的残留物的设备和方法，例如通过用含卤素气体钝化晶片的表面来蚀刻钨层以形成钨插塞。 在将金属层沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

公开(公告)号：US09807946B2

公开(公告)日：2017-11-07

申请号：US14328980

申请日：2014-07-11

Applicant: Ravi Rajagopalan

Inventor： Ravi Rajagopalan

IPC: A01G9/02

CPC classification number: A01G9/025 ,  Y02P60/244

Abstract: A vertical planter having a partitioned tray, a liner, and a sliding wire support grid, wherein the partitioned tray engages the sliding wire support grid to provide access to the partitioned tray.

公开(公告)号：US20080280438A1

公开(公告)日：2008-11-13

申请号：US12179002

申请日：2008-07-24

Applicant: Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

Inventor： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US07405158B2

公开(公告)日：2008-07-29

申请号：US11038592

申请日：2005-01-19

Applicant: Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Averginos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

Inventor： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Averginos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。