公开(公告)号：US07695563B2

公开(公告)日：2010-04-13

申请号：US11621040

申请日：2007-01-08

Applicant: Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

Inventor： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC: C30B25/14

CPC classification number: H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

Abstract: In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

Abstract translation: 在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层 处理。 该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物 从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。 在实施例中，还原气体可以含有乙硼烷或硅烷。

公开(公告)号：US06461435B1

公开(公告)日：2002-10-08

申请号：US09603117

申请日：2000-06-22

Applicant: Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

Inventor： Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

IPC: C23C1600

CPC classification number: C23C16/45565 ,  C23C16/455 ,  H01J37/3244

Abstract: A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

Abstract translation: 用于在半导体处理室中分配气体的喷头。 在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。 本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。 环从安装部分的第一侧延伸。 多个安装孔径向地设置在安装部分的环的任一侧。 淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

公开(公告)号：US07745333B2

公开(公告)日：2010-06-29

申请号：US12179002

申请日：2008-07-24

Applicant: Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

Inventor： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US20080317954A1

公开(公告)日：2008-12-25

申请号：US11621040

申请日：2007-01-08

Applicant: XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

Inventor： XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC: C23C16/08

CPC classification number: H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

Abstract: In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

Abstract translation: 在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层 处理。 该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物 从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。 在实施例中，还原气体可以含有乙硼烷或硅烷。

公开(公告)号：US20060009034A1

公开(公告)日：2006-01-12

申请号：US11038592

申请日：2005-01-19

Applicant: Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

Inventor： Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US6162715A

公开(公告)日：2000-12-19

申请号：US114839

申请日：1998-07-14

Applicant: Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

Inventor： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

IPC: C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H01L21/3205

CPC classification number: H01L29/66583 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L21/76843 ,  H01L29/4941

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract translation: 通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。 通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。 在沉积之前，用氢等离子体预处理晶片以提高粘附性。 钨沉积工艺可以使用六氟化钨和氢气进行CVD。 包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。 在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

公开(公告)号：US07211144B2

公开(公告)日：2007-05-01

申请号：US10194629

申请日：2002-07-12

Applicant: Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

Inventor： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC: C30B25/16

CPC classification number: H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

Abstract: A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Abstract translation: 使用顺序沉积工艺形成钨成核层的方法。 钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。 此后，从处理室除去从钨沉积产生的反应副产物。 在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。 这种沉积工艺形成具有良好阶梯覆盖的钨成核层。 可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为 形成。

公开(公告)号：US20080280438A1

公开(公告)日：2008-11-13

申请号：US12179002

申请日：2008-07-24

Applicant: Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

Inventor： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US07405158B2

公开(公告)日：2008-07-29

申请号：US11038592

申请日：2005-01-19

Applicant: Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Averginos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

Inventor： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Averginos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US06251190B1

公开(公告)日：2001-06-26

申请号：US09657880

申请日：2000-09-08

Applicant: Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

Inventor： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

IPC: C23C1600

CPC classification number: H01L29/66583 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L21/76843 ,  H01L29/4941

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract translation: 通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。 通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。 在沉积之前，用氢等离子体预处理晶片以提高粘附性。 钨沉积工艺可以使用六氟化钨和氢气进行CVD。 包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。 在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。