公开(公告)号：US09379604B2

公开(公告)日：2016-06-28

申请号：US13946340

申请日：2013-07-19

Applicant: RF Micro Devices, Inc.

Inventor： Jinhua Zhong ,  Daniel Charles Kerr ,  Kelvin Kai Tuan Yan ,  Brian Keith White

IPC: H04B1/44 ,  H02M3/07 ,  H02M1/00

CPC classification number: H02M3/07 ,  H02M2001/0032 ,  Y02B70/16

Abstract: Radio frequency (RF) switching circuitry includes support circuitry for maintaining one or more RF switching elements in either an ON or OFF state. The support circuitry includes a negative charge pump adapted to quickly generate a negative voltage during a “boost” mode of operation, and maintain the negative voltage during a normal mode of operation. The negative charge pump includes an oscillator adapted to generate a high frequency oscillating signal for driving the charge pump during the boost mode of operation and a low frequency oscillating signal for driving the charge pump during the normal mode of operation. By generating the high frequency oscillating signal only during a boost mode of operation, spurious noise coupled to the RF switch circuitry is minimized during a normal mode of operation.

Abstract translation: 射频（RF）切换电路包括用于将一个或多个RF开关元件维持在ON或OFF状态的支持电路。 支持电路包括负电荷泵，其适于在“升压”操作模式期间快速产生负电压，并且在正常工作模式期间保持负电压。 负电荷泵包括适于在升压操作期间产生用于驱动电荷泵的高频振荡信号的振荡器和用于在正常操作模式期间驱动电荷泵的低频振荡信号。 通过仅在升压操作模式期间产生高频振荡信号，耦合到RF开关电路的杂散噪声在正常操作模式期间被最小化。

公开(公告)号：US20150054698A1

公开(公告)日：2015-02-26

申请号：US14465142

申请日：2014-08-21

Applicant: RF Micro Devices, Inc.

Inventor： Daniel Charles Kerr ,  Christian Rye Iversen ,  Eric K. Bolton ,  Ruediger Bauder ,  Nadim Khlat

IPC: H01Q5/00

CPC classification number: H01Q5/328 ,  H01Q5/335

Abstract: Antenna tuning circuitry includes an antenna tuning node, an antenna tuning switch, and a resonant tuning circuit. The antenna tuning node is coupled to a resonant conduction element of an antenna. The antenna tuning switch and the resonant tuning circuit are coupled in series between the antenna tuning switch and the antenna tuning node, such that the resonant tuning circuit is between the antenna tuning node and the antenna tuning switch. The resonant tuning circuit is configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at harmonic frequencies generated by the antenna tuning switch. Accordingly, harmonic interference generated by the antenna tuning switch is prevented from reaching the antenna, while simultaneously allowing for tuning of the antenna.

Abstract translation: 天线调谐电路包括天线调谐节点，天线调谐开关和谐振调谐电路。 天线调谐节点耦合到天线的谐振传导元件。 天线调谐开关和谐振调谐电路串联在天线调谐开关和天线调谐节点之间，使得谐振调谐电路在天线调谐节点和天线调谐开关之间。 谐振调谐电路被配置为在由天线调谐开关产生的一个或多个谐波频率下谐振，使得在天线调谐开关和天线调谐节点之间以由天线调谐开关产生的谐波频率形成高阻抗路径。 因此，防止由天线调谐开关产生的谐波干扰到达天线，同时允许调谐天线。

公开(公告)号：US20140335801A1

公开(公告)日：2014-11-13

申请号：US14271921

申请日：2014-05-07

Applicant: RF Micro Devices, Inc.

Inventor： Eric K. Bolton ,  Daniel Charles Kerr ,  Marcus Granger-Jones

IPC: H04B1/44

CPC classification number: H04B15/02

Abstract: RF switching circuitry includes an RF switch coupled between an input node and an output node. Distortion compensation circuitry is coupled in parallel with the RF switch between the input node and the output node. The RF switch is configured to selectively pass an RF signal from the input node to the output node based on a first switching control signal. The distortion compensation circuitry is configured to boost a portion of the RF signal that is being compressed by the RF switch when the amplitude of the RF signal is above a predetermined threshold by selectively injecting current into one of the input node or the output node. Boosting a portion of the RF signal that is being compressed by the RF switch allows a signal passing through the RF switch to remain substantially linear, thereby improving the performance of the RF switching circuitry.

Abstract translation: RF切换电路包括耦合在输入节点和输出节点之间的RF开关。 失真补偿电路与输入节点和输出节点之间的RF开关并联耦合。 RF开关被配置为基于第一开关控制信号选择性地将RF信号从输入节点传递到输出节点。 失真补偿电路被配置为通过选择性地将电流注入到输入节点或输出节点之一时，通过RF信号的幅度高于预定阈值来升高被RF开关压缩的RF信号的一部分。 升高由RF开关压缩的RF信号的一部分允许通过RF开关的信号保持基本上线性，从而提高RF开关电路的性能。

公开(公告)号：US20140252567A1

公开(公告)日：2014-09-11

申请号：US14261029

申请日：2014-04-24

Applicant: RF Micro Devices, Inc.

Inventor： Michael Carroll ,  Julio Costa ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

IPC: H01L29/02 ,  H01L21/02

CPC classification number: H01L21/0237 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3737 ,  H01L23/485 ,  H01L29/0657 ,  H01L29/78606 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/13

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括附接到晶片把手的半导体堆叠结构，其具有至少一个孔，其延伸穿过晶片把手到达半导体堆叠结构的暴露部分。 导热和电阻聚合物基本上填充至少一个孔并接触半导体堆叠结构的暴露部分。 用于制造半导体器件的一种方法包括在晶片手柄中形成图案化孔以暴露半导体堆叠结构的一部分。 图案化的孔可以或可以不与构成半导体堆叠结构的RF电路的部分对准。 接下来的步骤包括使半导体堆叠结构的暴露部分与聚合物接触，并且用聚合物基本上填充图案化的孔，其中聚合物是导热的并具有电阻性。

公开(公告)号：US09806192B2

公开(公告)日：2017-10-31

申请号：US15133669

申请日：2016-04-20

Applicant: RF Micro Devices, Inc.

Inventor： Philip W. Mason ,  Michael Carroll ,  Julio C. Costa ,  Jan Edward Vandemeer ,  Daniel Charles Kerr

IPC: H01L29/78 ,  H01L27/092 ,  H01L27/12 ,  H01L23/66

CPC classification number: H01L29/7838 ,  H01L23/66 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78654

Abstract: The present disclosure relates to a silicon-on-insulator (SOI) substrate structure with a buried dielectric layer for radio frequency (RF) complementary metal-oxide semiconductor (CMOS) switch fabrications. The buried dielectric layer suppresses back-gate transistors in the RF CMOS switches fabricated on the SOI substrate structure. The SOI substrate structure includes a silicon handle layer, a silicon oxide layer over the silicon handle layer, a buried dielectric layer over the silicon oxide layer, and a silicon epitaxy layer directly over the buried dielectric layer.

公开(公告)号：US20160380101A1

公开(公告)日：2016-12-29

申请号：US15133669

申请日：2016-04-20

Applicant: RF Micro Devices, Inc.

Inventor： Philip W. Mason ,  Michael Carroll ,  Julio C. Costa ,  Jan Edward Vandemeer ,  Daniel Charles Kerr

IPC: H01L29/78 ,  H01L27/12 ,  H01L23/66 ,  H01L27/092

CPC classification number: H01L29/7838 ,  H01L23/66 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78654

Abstract: The present disclosure relates to a silicon-on-insulator (SOI) substrate structure with a buried dielectric layer for radio frequency (RF) complementary metal-oxide semiconductor (CMOS) switch fabrications. The buried dielectric layer suppresses back-gate transistors in the RF CMOS switches fabricated on the SOI substrate structure. The SOI substrate structure includes a silicon handle layer, a silicon oxide layer over the silicon handle layer, a buried dielectric layer over the silicon oxide layer, and a silicon epitaxy layer directly over the buried dielectric layer.

Abstract translation: 本公开涉及具有用于射频（RF）互补金属氧化物半导体（CMOS）开关制造的掩埋介电层的绝缘体上硅（SOI）衬底结构。 掩埋介质层抑制在SOI衬底结构上制造的RF CMOS开关中的背栅晶体管。 SOI衬底结构包括硅手柄层，硅手柄层上的氧化硅层，氧化硅层上的掩埋电介质层，以及直接在掩埋电介质层上的硅外延层。

公开(公告)号：US09240770B2

公开(公告)日：2016-01-19

申请号：US14212831

申请日：2014-03-14

Applicant: RF Micro Devices, Inc.

Inventor： Daniel Charles Kerr ,  Eric K. Bolton ,  Robert Andrew Phelps

IPC: H03K17/687 ,  H03H11/12 ,  H03K17/693 ,  H01P1/15 ,  H03K17/10

CPC classification number: H03H11/1213 ,  H01P1/15 ,  H03K17/102 ,  H03K17/687 ,  H03K17/693

Abstract: Disclosed is a harmonic cancellation circuit for an RF switch branch having a first transistor with a first gate terminal and a first body terminal, a second transistor having a second gate terminal coupled to the first body terminal, and having a second body terminal coupled to the first gate terminal. Also included is a first resistor coupled between a first coupling node and the second body terminal, and a second resistor coupled between a second coupling node and the first body terminal, wherein the first transistor and second transistor are adapted to generate an inverse phase third harmonic signal relative to a third harmonic signal generated by the RF switch branch, such that the inverse phase third harmonic signal is output through the first resistor and the second resistor to the RF switch branch to reduce the third harmonic signal.

Abstract translation: 公开了一种用于RF开关分支的谐波消除电路，具有具有第一栅极端子和第一主体端子的第一晶体管，第二晶体管具有耦合到第一主体端子的第二栅极端子，并且具有耦合到第一主体端子的第二主体端子 第一门终端。 还包括耦合在第一耦合节点和第二主体端子之间的第一电阻器和耦合在第二耦合节点和第一主体端子之间的第二电阻器，其中第一晶体管和第二晶体管适于产生反相三次谐波 信号相对于由RF开关分支产生的三次谐波信号，使得反相三次谐波信号通过第一电阻器和第二电阻器输出到RF开关分支以减少三次谐波信号。

公开(公告)号：US20140306324A1

公开(公告)日：2014-10-16

申请号：US14315765

申请日：2014-06-26

Applicant: RF Micro Devices, Inc.

Inventor： Julio Costa ,  Michael Carroll ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

IPC: H01L23/373

CPC classification number: H01L23/3737 ,  H01L21/565 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/367 ,  H01L24/13 ,  H01L2221/6834 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A polymer substrate having a high thermal conductivity and a high electrical resistivity is disposed onto the first surface of the semiconductor stack structure. One method includes providing the semiconductor stack structure with the first surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the first surface of the semiconductor stack structure. A following step includes disposing a polymer substrate having high thermal conductivity and high electrical resistivity directly onto the first surface of the semiconductor stack structure.

Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括具有第一表面和第二表面的半导体堆叠结构。 具有高导热性和高电阻率的聚合物基板设置在半导体堆叠结构的第一表面上。 一种方法包括提供具有与晶片把手直接接触的第一表面的半导体堆叠结构。 下一步涉及去除晶片把手以暴露半导体堆叠结构的第一表面。 以下步骤包括将具有高导热性和高电阻率的聚合物基材物质直接设置在半导体堆叠结构的第一表面上。

公开(公告)号：US20140252566A1

公开(公告)日：2014-09-11

申请号：US14260909

申请日：2014-04-24

Applicant: RF Micro Devices, Inc.

Inventor： Daniel Charles Kerr ,  Julio Costa ,  Michael Carroll ,  Don Willis ,  Elizabeth Glass

IPC: H01L29/02 ,  H01L21/02

CPC classification number: H01L21/0237 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/36 ,  H01L23/3737 ,  H01L29/78606 ,  H01L2224/13022

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A first polymer having a high thermal conductivity and a high electrical resistivity is disposed on the first surface of the semiconductor stack structure. An exemplary method includes providing the semiconductor stack structure with the second surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the second surface of the semiconductor stack structure. A following step includes disposing a second polymer having high thermal conductivity and high electrical resistivity directly onto the second surface of the semiconductor stack structure. Additional methods apply silicon nitride layers on the first surface and second surface of the semiconductor stack structure before disposing the first polymer and second polymer to realize the semiconductor device.

Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括具有第一表面和第二表面的半导体堆叠结构。 具有高导热性和高电阻率的第一聚合物设置在半导体堆叠结构的第一表面上。 一种示例性方法包括提供具有与晶片把手直接接触的第二表面的半导体堆叠结构。 下一步涉及去除晶片把手以暴露半导体堆叠结构的第二表面。 以下步骤包括将具有高导热性和高电阻率的第二聚合物直接设置在半导体堆叠结构的第二表面上。 在配置第一聚合物和第二聚合物以实现半导体器件之前，附加方法将氮化硅层应用于半导体叠层结构的第一表面和第二表面。

公开(公告)号：US20140210436A1

公开(公告)日：2014-07-31

申请号：US13946340

申请日：2013-07-19

Applicant: RF Micro Devices, Inc.

Inventor： Jinhua Zhong ,  Daniel Charles Kerr ,  Kelvin Kai Tuan Yan ,  Brian Keith White

IPC: H02M3/158

CPC classification number: H02M3/07 ,  H02M2001/0032 ,  Y02B70/16

Abstract: Radio frequency (RF) switching circuitry includes support circuitry for maintaining one or more RF switching elements in either an ON or OFF state. The support circuitry includes a negative charge pump adapted to quickly generate a negative voltage during a “boost” mode of operation, and maintain the negative voltage during a normal mode of operation. The negative charge pump includes an oscillator adapted to generate a high frequency oscillating signal for driving the charge pump during the boost mode of operation and a low frequency oscillating signal for driving the charge pump during the normal mode of operation. By generating the high frequency oscillating signal only during a boost mode of operation, spurious noise coupled to the RF switch circuitry is minimized during a normal mode of operation.

Abstract translation: 射频（RF）切换电路包括用于将一个或多个RF开关元件维持在ON或OFF状态的支持电路。 支持电路包括负电荷泵，其适于在“升压”操作模式期间快速产生负电压，并且在正常工作模式期间保持负电压。 负电荷泵包括适于在升压操作期间产生用于驱动电荷泵的高频振荡信号的振荡器和用于在正常操作模式期间驱动电荷泵的低频振荡信号。 通过仅在升压操作模式期间产生高频振荡信号，耦合到RF开关电路的杂散噪声在正常操作模式期间被最小化。