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公开(公告)号：US07058112B2
公开(公告)日：2006-06-06
申请号：US10026044
申请日：2001-12-27
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01S3/08
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3211 , H01S5/32358 , H01S5/32366 , H01S5/34306 , H01S5/34346
摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL), can include at least one quantum well comprised of GaAsSb; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Barrier and confinement layers can comprise of AlGaAs. Barrier layers can also be comprised of GaAsP. Nitrogen can be placed in quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.
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12.发明授权Vertical cavity surface emitting laser including indium in the active region 失效在活性区域中包括铟的垂直空腔表面发射激光器公开(公告)号：US06922426B2
公开(公告)日：2005-07-26
申请号：US10026055
申请日：2001-12-20
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3211 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/34353
摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser is described that includes at least one quantum well comprised of InGaAs; GaAsN barrier layers sandwiching said at least one quantum well; and GaAsN confinement layers sandwiching said barrier layers. GaAsN barrier layers sandwiching the quantum well and AlGaAs confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. AlGaAs barrier layers sandwiching the at least one quantum well and GaAsN confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.
摘要翻译： 可以生长量子阱和相关屏障层，以包括放置在典型GaAs衬底内或周围的氮（N），铝（Al），锑（Sb），磷（P）和/或铟（In），以实现长波长VCSEL 性能，例如在1260至1650 nm范围内。 根据本发明的特征，描述了包括由InGaAs组成的至少一个量子阱的垂直腔表面发射激光器; 夹持所述至少一个量子阱的GaAsN阻挡层; 和夹持所述阻挡层的GaAsN限制层。 夹着量子阱的GaAsN阻挡层和夹持势垒层的AlGaAs限制层也可以设置有InGaAs量子阱。 夹持至少一个量子阱的AlGaAs阻挡层和夹着阻挡层的GaAsN限制层也可以设置有InGaAs量子阱。 量子阱的厚度可以达到并包括50埃。 量子阱也可以开发深度至少40 meV。
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13.发明授权Current confinement, capacitance reduction and isolation of VCSELs using deep elemental traps 失效使用深度元素阱的电流限制，电容降低和VCSEL的隔离公开(公告)号：US06738409B2
公开(公告)日：2004-05-18
申请号：US10028303
申请日：2001-12-28
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01S5183
CPC分类号： H01S5/18308 , H01S5/18358 , H01S5/2063 , H01S5/423
摘要： A VCSEL having a current confinement structure comprised of deep traps formed by implanting either iron (Fe) or chrome (Cr) into a group III-V compound, such as InP or GaAs. Beneficially, the VCSEL is part of an array of VCSELs produced on a common substrate.
摘要翻译： 具有电流限制结构的VCSEL包括通过将铁（Fe）或铬（Cr）注入到诸如InP或GaAs的III-V族化合物中形成的深陷阱。 有利地，VCSEL是在公共基板上生成的VCSEL阵列的一部分。
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14.发明授权Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes 失效发射结构位于防止某些不利模式的位置，并在有利的模式下增强光的产生
公开(公告)号：US5264715A
公开(公告)日：1993-11-23
申请号：US909270
申请日：1992-07-06
申请人： James K. Guenter , Ralph H. Johnson
发明人： James K. Guenter , Ralph H. Johnson
CPC分类号： H01L33/20 , H01L33/105 , H01S5/20 , H01L33/02 , H01L33/145 , H01L33/465 , H01S5/2004
摘要： A light emitting device is provided with mirrors placed on opposite sides of the source of light and spaced apart by a distance that is determined as a function of the wavelength of the light emitted by the light source. One particular embodiment of the present invention spaces the mirrors apart by a distance equal to n.lambda./2+.lambda./4, where n is an integer value that is maintained as small as possible within practical constraints. The close proximity of the mirrors and their particular spacing which is determined as a function of the wavelength inhibits undesirable modes of light emission in directions toward the mirrors. This inhibition of light in undesirable modes perpendicular to the mirrors enhances the production of light in modes that are parallel to the mirror surfaces. The overall light output efficiency of the device is enhanced through the inhibition of these undesirable modes.
摘要翻译： 发光器件设置有放置在光源的相对侧上的反射镜并且间隔开一定距离，该距离被确定为由光源发射的光的波长的函数。 本发明的一个具体实施例将镜子间隔开等于nλ/ 2 +λ/ 4的距离，其中n是在实际约束条件下尽可能小的整数值。 反射镜的紧密接近以及其作为波长的函数确定的特定间隔抑制了朝向反射镜的方向上的不期望的发光模式。 这种在与反射镜垂直的不期望的模式中的光的抑制增强了与镜面平行的模式的光的产生。 通过抑制这些不期望的模式，增强了器件的整体光输出效率。
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15.发明申请LASERS WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM WITH REDUCED TRAPS 审中-公开具有高铝和低铝的量子柱的激光器具有具有高铝和低含量的阻挡层的具有减少的行进公开(公告)号：US20120236891A1
公开(公告)日：2012-09-20
申请号：US13423550
申请日：2012-03-19
CPC分类号： H01S5/3407 , B82Y20/00 , H01S5/0021 , H01S5/18311 , H01S5/34313 , H01S5/3436 , H01S5/34366 , H01S5/34373
摘要： A VCSEL can include: one or more quantum wells having (Al)InGaAs; two or more quantum well barriers having Al(In)GaAs bounding the one or more quantum well layers; and one or more transitional monolayers deposited between each quantum well layer and quantum well barrier, wherein the quantum wells, barriers and transitional monolayers are substantially devoid of traps. The one or more transitional monolayers include GaP, GaAs, and/or GaAsP. Alternatively, the VCSEL can include two or more transitional monolayers of AlInGaAs with a barrier-side monolayer having lower In and higher Al compared to a quantum well side monolayer that has higher In and lower Al.
摘要翻译： VCSEL可以包括：具有（Al）InGaAs的一个或多个量子阱; 具有限定一个或多个量子阱层的Al（In）GaAs的两个或更多个量子阱屏障; 并且沉积在每个量子阱层和量子阱屏障之间的一个或多个过渡单层，其中量子阱，势垒和过渡单层基本上没有陷阱。 一个或多个过渡单层包括GaP，GaAs和/或GaAsP。 或者，与具有较高In和更低Al的量子阱侧单层相比，VCSEL可以包括两个或更多个AlInGaAs的过渡单层和具有较低In和更高Al的势垒侧单层。
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16.发明授权公开(公告)号：US08193019B2
公开(公告)日：2012-06-05
申请号：US12917449
申请日：2010-11-01
IPC分类号： H01L21/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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17.发明申请ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING TO MAXIMIZE CONDUCTION AND REFLECTIVITY, AND MINIMIZE ABSORPTION 有权结合周期性和调制功能的不对称DBR配对以最大限度地提高导电性和反射性，并最小化吸收公开(公告)号：US20110096803A1
公开(公告)日：2011-04-28
申请号：US11963365
申请日：2007-12-21
申请人： Ralph H. Johnson , James Guenter
发明人： Ralph H. Johnson , James Guenter
CPC分类号： H01S5/18361 , H01L33/0045 , H01L33/105 , H01S5/0425 , H01S5/18344 , H01S5/305 , H01S5/3054 , H01S5/3077
摘要： An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.
摘要翻译： 用于改善传导和反射率并最小化吸收的光学装置。 该光学装置包括第一反射镜，该第一反射镜包括被设计成反射预定波长的光场的第一多个反射镜周期，其中光场具有峰值和零点。 多个反射镜周期中的每一个包括具有高载流子迁移率的第一层，具有较低载流子迁移率的第二层以及第一和第二层之间的第一组成斜面。 第一和第二层的厚度对于第一多个反射镜周期的至少一部分被建立为使得光场的零点发生在第一层内而不在组成斜坡内。 第一多个反射镜周期内的第一层的至少部分包括在光场的零点的位置处的升高的掺杂浓度。
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公开(公告)号：US20110086452A1
公开(公告)日：2011-04-14
申请号：US12973754
申请日：2010-12-20
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01L33/60
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305 , H01S5/3095
摘要： Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.
摘要翻译： 制造具有增强应变的半导体的方法。 一个实施例包括制造具有外延结构的半导体器件。 外延结构由一个或多个半导体层形成。 层中的一个或多个包括在外延生长期间包含少量Al和重复δ掺杂的掺杂剂，以形成表面为III族富集的时期。
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公开(公告)号：US20110049471A1
公开(公告)日：2011-03-03
申请号：US12941940
申请日：2010-11-08
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01L33/06
CPC分类号： H01L29/201 , H01L33/06 , H01L33/30 , H01S5/0421 , H01S5/18308 , H01S5/3211
摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.
摘要翻译： 制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。 通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。 中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。 中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。 注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。
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公开(公告)号：US07829912B2
公开(公告)日：2010-11-09
申请号：US11735993
申请日：2007-04-16
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01L31/167
CPC分类号： H01L29/201 , H01L33/06 , H01L33/30 , H01S5/0421 , H01S5/18308 , H01S5/3211
摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.
摘要翻译： 制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。 通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。 中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。 中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。 注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。
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