公开(公告)号：US20120148870A1

公开(公告)日：2012-06-14

申请号：US12964347

申请日：2010-12-09

申请人： Ping-Yin Liu ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Shang-Ying Tsai ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

发明人： Ping-Yin Liu ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Shang-Ying Tsai ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

IPC分类号： B32B15/01 ,  B23K1/20 ,  B32B15/04

CPC分类号： B81C1/00269 ,  B32B7/12 ,  B32B15/043 ,  B32B15/20 ,  B32B2255/24 ,  B32B2307/746 ,  B32B2457/00 ,  B81B3/0005 ,  B81C2201/112 ,  Y10T428/12674 ,  Y10T428/12708 ,  Y10T428/12736 ,  Y10T428/12986

摘要： A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

摘要翻译： 公开了没有抗静电层和粘合方法的键。 一种示例性方法包括形成第一粘合层; 在所述第一接合层上形成中间层; 在中间层上形成抗静电层; 以及从所述第一接合层和中间层形成液体，使得所述抗静电层浮在所述第一接合层上。 第二接合层可以结合到第一接合层，同时抗静电层漂浮在第一接合层上，使得第一和第二接合层之间的接合没有抗静电层。

公开(公告)号：US08790946B2

公开(公告)日：2014-07-29

申请号：US13365043

申请日：2012-02-02

申请人： Xin-Hua Huang ,  Ping-Yin Liu ,  Li-Cheng Chu ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chun-Wen Cheng ,  Chia-Shiung Tsai

发明人： Xin-Hua Huang ,  Ping-Yin Liu ,  Li-Cheng Chu ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chun-Wen Cheng ,  Chia-Shiung Tsai

IPC分类号： H01L21/52

CPC分类号： B23K20/002 ,  B23K20/023

摘要： A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other.

摘要翻译： 一种方法包括通过共晶接合将第一接合层结合到第二接合层。 接合步骤包括将第一接合层和第二接合层加热至高于第一接合层和第二接合层的共晶温度的温度，并进行泵送循环。 泵送循环包括施加第一力以将第一接合层和第二接合层相互挤压。 在施加第一力的步骤之后，施加比第一力小的第二力以将第一接合层和第二接合层相互挤压。 在施加第二力的步骤之后，施加比第二力高的第三力以将第一接合层和第二接合层相互挤压。

公开(公告)号：US08343789B2

公开(公告)日：2013-01-01

申请号：US12858202

申请日：2010-08-17

申请人： Chung-Hsien Lin ,  Chun-Wen Cheng ,  Chia-Hua Chu ,  Yi Heng Tsai

发明人： Chung-Hsien Lin ,  Chun-Wen Cheng ,  Chia-Hua Chu ,  Yi Heng Tsai

IPC分类号： H01L21/02

CPC分类号： H01L29/84 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81C1/00571

摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.

摘要翻译： 本公开提供了一种制造具有改进的锚的微结构装置的系统。 利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。 然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。 然后将微结构器件层与空腔上的氧化物层结合。 形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。 在一个实施例中，外部边界基本上在空腔的侧壁的外侧。 然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

公开(公告)号：US08330559B2

公开(公告)日：2012-12-11

申请号：US12879216

申请日：2010-09-10

申请人： Chun-Wen Cheng ,  Chung-Hsien Lin ,  Chia-Hua Chu

发明人： Chun-Wen Cheng ,  Chung-Hsien Lin ,  Chia-Hua Chu

IPC分类号： H03H9/00

CPC分类号： B81B7/0032 ,  B81C1/00269 ,  B81C1/00333

摘要： A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer.

摘要翻译： 晶片级封装的方法包括提供包括掩埋氧化物层和顶部氧化物层的衬底，以及蚀刻衬底以在掩埋氧化物层之上形成开口和在开口之间的微电子机械系统（MEMS）谐振器元件， 封装在掩埋氧化物层内的MEMS谐振器元件，顶部氧化物层和侧壁氧化物层。 该方法还包括用多晶硅填充开口以形成邻近MEMS谐振器元件的多晶硅电极，去除与MEMS谐振器元件相邻的顶部氧化物层和侧壁氧化物层，将多晶硅电极连接到互补金属氧化物半导体（CMOS ）晶片或载体晶片，去除邻近MEMS谐振器元件的掩埋氧化物层，以及将衬底接合到封盖晶片，以密封封装晶片和CMOS晶片或载体晶片之一中的MEMS谐振器元件。

公开(公告)号：US20120125747A1

公开(公告)日：2012-05-24

申请号：US12951492

申请日：2010-11-22

申请人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

发明人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

IPC分类号： H01H57/00 ,  H01H11/00

CPC分类号： H01H11/00 ,  H01G5/18 ,  H01H49/00 ,  H01H59/0009 ,  H01H2001/0084 ,  H01P1/127 ,  Y10T29/49105

摘要： The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.

摘要翻译： 本公开在一个实施例中提供了一种半导体器件，其包括具有衬底的MEMS开关，设置在衬底上方的第一电介质层，以及设置在第一电介质层上方的底部信号电极，凸块和底部致动电极。 MEMS开关还包括封装底部信号电极的第二电介质层和包括设置在底部信号电极上方的顶部信号电极的可移动部件和设置在底部致动电极和凸起上方的顶部致动电极，其中顶部致动电极 电连接到凸块。 还公开了一种制造MEMS开关的方法。

公开(公告)号：US20120068276A1

公开(公告)日：2012-03-22

申请号：US12887320

申请日：2010-09-21

申请人： Chung-Hsien Lin ,  Chia-Hua Chu ,  Chun-Wen Cheng

发明人： Chung-Hsien Lin ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00571 ,  B81B2203/0109 ,  B81B2203/0307 ,  B81C1/00063

摘要： The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer formed on the buried oxide layer. A top oxide layer is formed on the device layer. The top oxide layer, the device layer, and the buried oxide layer are etched, thereby forming trenches to create an anchor and a microstructure device in the device layer. In process of fabricating the device, a thermal oxide layer is formed along sides of the microstructure device to enclose the microstructure device in the buried oxide layer, the top oxide layer and the thermal oxide layer. Then, a poly layer if formed to fill in the trenches and enclose the anchor. After the poly layer fills in the trenches, the oxide layers enclosing the microstructure device are etched away, releasing the microstructure device.

摘要翻译： 本公开提供了具有增强的锚和窄气隙的微结构装置。 本文提供的微结构器件的一个实施例包括分层晶片。 层状晶片包括硅手柄层，形成在手柄层上的掩埋氧化物层和形成在掩埋氧化物层上的硅器件层。 在器件层上形成顶部氧化物层。 蚀刻顶部氧化物层，器件层和掩埋氧化物层，从而形成沟槽，以在器件层中形成锚和微结构器件。 在制造该器件的过程中，沿着微结构器件的侧面形成热氧化物层，以将微结构器件封装在掩埋氧化物层，顶部氧化物层和热氧化物层中。 然后，如果形成多层以填充沟槽并包围锚。 在多层填充沟槽之后，将包围微结构器件的氧化物层蚀刻掉，释放微结构器件。

公开(公告)号：US20140287548A1

公开(公告)日：2014-09-25

申请号：US14225733

申请日：2014-03-26

申请人： Chung-Hsien Lin ,  Chia-Hua Chu ,  Chun-Wen Cheng

发明人： Chung-Hsien Lin ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC分类号： B81C1/00

CPC分类号： B81B7/0058 ,  B81C1/00333 ,  B81C1/0038 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.

摘要翻译： 本公开提供了一种制造微机电系统（MEMS）装置的方法。 在一个实施例中，一种方法包括提供包括第一牺牲层的衬底，在第一牺牲层之上形成微电子机械系统（MEMS）结构，以及在第一牺牲层之上的基本上相同的水平面上形成释放孔， MEMS结构。 该方法还包括在MEMS结构之上和释放孔内形成第二牺牲层，以及在第二牺牲层和MEMS结构之上形成第一帽，其中第一帽的腿设置在MEMS结构和释放之间 光圈。 该方法还包括去除第一牺牲层，通过释放孔去除第二牺牲层并堵塞释放孔。 还提供了通过这种方法形成的MEMS器件。

公开(公告)号：US20120043626A1

公开(公告)日：2012-02-23

申请号：US12858202

申请日：2010-08-17

申请人： Chung-Hsien Lin ,  Chun-Wen Cheng ,  Chia-Hua Chu ,  Yi Heng Tsai

发明人： Chung-Hsien Lin ,  Chun-Wen Cheng ,  Chia-Hua Chu ,  Yi Heng Tsai

IPC分类号： H01L29/84 ,  H01L21/50

CPC分类号： H01L29/84 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81C1/00571

摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.

摘要翻译： 本公开提供了一种制造具有改进的锚的微结构装置的系统。 利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。 然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。 然后将微结构器件层与空腔上的氧化物层结合。 形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。 在一个实施例中，外部边界基本上在空腔的侧壁的外侧。 然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

公开(公告)号：US08797127B2

公开(公告)日：2014-08-05

申请号：US12951492

申请日：2010-11-22

申请人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

发明人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

IPC分类号： H01H51/22

CPC分类号： H01H11/00 ,  H01G5/18 ,  H01H49/00 ,  H01H59/0009 ,  H01H2001/0084 ,  H01P1/127 ,  Y10T29/49105

摘要： The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.

摘要翻译： 本公开在一个实施例中提供了一种半导体器件，其包括具有衬底的MEMS开关，设置在衬底上方的第一电介质层，以及设置在第一电介质层上方的底部信号电极，凸块和底部致动电极。 MEMS开关还包括封装底部信号电极的第二电介质层和包括设置在底部信号电极上方的顶部信号电极的可移动部件和设置在底部致动电极和凸起上方的顶部致动电极，其中顶部致动电极 电连接到凸块。 还公开了一种制造MEMS开关的方法。

公开(公告)号：US08729646B2

公开(公告)日：2014-05-20

申请号：US13571258

申请日：2012-08-09

申请人： Chia-Hua Chu ,  Chun-Wen Cheng ,  Te-Hao Lee ,  Chung-Hsien Lin

发明人： Chia-Hua Chu ,  Chun-Wen Cheng ,  Te-Hao Lee ,  Chung-Hsien Lin

IPC分类号： H01L29/84

CPC分类号： B81B3/0059 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C2203/0118 ,  G01P15/0802 ,  G01P15/125 ,  H04R2201/003

摘要： A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.

摘要翻译： 一种器件包括其中具有MEMS器件的微机电系统（MEMS）晶片。 MEMS器件包括可移动元件和MEMS晶片中的第一开口。 可移动元件设置在第一开口中。 载体晶片结合到MEMS晶片。 载体晶片包括连接到第一开口的第二开口，其中第二开口包括从载体晶片的表面延伸到载体晶片中的入口部分和比入口部分更宽的内部部分，其中内部部分更深 在载体晶片中比入口部分。