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11.发明授权Process for generating negative tone resist images utilizing carbon dioxide critical fluid 失效使用二氧化碳临界流体生成负色调抗蚀剂图像的方法
公开(公告)号：US5665527A
公开(公告)日：1997-09-09
申请号：US794135
申请日：1997-02-03
CPC分类号： G03F7/30 , G03F7/0045 , G03F7/0046
摘要： The invention relates to a process for generating a negative tone resist image comprising the steps of (1) coating a substrate with a film of a polymeric composition comprising (i) a polymer, (ii) a photosensitive acid generator, and (iii) acid labile groups; (2) imagewise exposing the film to radiation to generate free acid; and (3) developing the image with critical fluid.
摘要翻译： 本发明涉及一种产生负色调抗蚀剂图像的方法，包括以下步骤：（1）用聚合物组合物的膜涂覆基材，所述聚合物组合物包含（i）聚合物，（ii）光敏酸产生剂，和（iii）酸 不稳定团体 （2）将膜成像曝光以产生游离酸; 和（3）用临界流体开发图像。
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公开(公告)号：US07855045B2
公开(公告)日：2010-12-21
申请号：US11868320
申请日：2007-10-05
申请人： Robert David Allen , Phillip Joe Brock , Dario Gil , William Dinan Hinsberg , Carl Eric Larson , Linda Karin Sundberg , Gregory Michael Wallraff
发明人： Robert David Allen , Phillip Joe Brock , Dario Gil , William Dinan Hinsberg , Carl Eric Larson , Linda Karin Sundberg , Gregory Michael Wallraff
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要翻译： 公开了一种用于施加在光致抗蚀剂材料上的面漆材料。 面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000 /秒的溶解速率的聚合物。 聚合物含有包含以下两种结构之一的六氟醇单体单元：其中n是整数。 面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 面漆材料优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。
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13.发明授权公开(公告)号：US06610456B2
公开(公告)日：2003-08-26
申请号：US09794466
申请日：2001-02-26
IPC分类号： G03F7039
CPC分类号： G03F7/0046 , C08F212/14 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/108
摘要： Copolymers prepared by radical polymerization of a fluorine-containing aromatic monomer and an acrylate-based comonomer that may or may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
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公开(公告)号：US5985524A
公开(公告)日：1999-11-16
申请号：US828921
申请日：1997-03-28
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/111
摘要： The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
摘要翻译： 本发明涉及用化学放大的辐射敏感双层抗蚀剂形成双层抗蚀剂图像的方法。 双层抗蚀剂设置在基材上，并且包括（i）包含辐射敏感酸产生剂和具有酸可裂解的甲硅烷基乙氧基的乙烯基聚合物和（ii）有机底层的顶部成像层。 双层抗蚀剂用于集成电路的制造。
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公开(公告)号：US07354692B2
公开(公告)日：2008-04-08
申请号：US11125971
申请日：2005-05-09
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译： 公开了一类光刻抗蚀剂组合物，其适用于可见光并且不需要曝光后烘烤步骤。 所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位 另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。
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公开(公告)号：US5747223A
公开(公告)日：1998-05-05
申请号：US677230
申请日：1996-07-09
申请人： Robert D. Allen , Richard Allen Day , Donald Herman Glatzel , William Dinan Hinsberg , John Richard Mertz , David John Russell , Gregory Michael Wallraff
发明人： Robert D. Allen , Richard Allen Day , Donald Herman Glatzel , William Dinan Hinsberg , John Richard Mertz , David John Russell , Gregory Michael Wallraff
摘要： An improved photoimagable cationically polymerizable epoxy based coating material is provided, that is suitable for use on a variety of substrates including epoxy-glass laminate boards cured with dicyandiamide. The material includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which is a condensation product of epichlorohydrin and bisphenol A having a molecular weight of between about 40,000 and 130,000; and between about 35% and 72% by weight of an epoxidized glycidyl ether of a brominated bisphenol A having a softening point of between about 60.degree. C. and about 110.degree. C. and a molecular weight of between about 600 and 2,500. Optionally, a third resin may be added to the resin system. To this resin system is added about 0.1 to about 15 parts by weight per 100 parts of resin of a cationic photoinitiator capable of initiating polymerization of said epoxidized resin system upon exposure to actinic radiation; the system being further characterized by having an absorbance of light in the 330 to 700 nm region of less than 0.1 for a 2.0 mil thick film. Optionally a photosensitizer such as perylene and its derivatives or anthracene and its derivatives may be added.
摘要翻译： 提供了一种改进的可光成像的可阳离子聚合的环氧基涂料，适用于各种基材，包括用双氰胺固化的环氧玻璃层压板。 该材料包括基本上由约10重量％至约80重量％的多元醇树脂组成的环氧树脂体系，多元醇树脂是分子量为约40,000至130,000的表氯醇和双酚A的缩合产物; 和约35重量％至72重量％的软化点为约60℃至约110℃，分子量为约600至2,500的溴化双酚A的环氧化缩水甘油醚。 任选地，可以向树脂体系中加入第三树脂。 向该树脂体系中添加约0.1〜约15重量份/ 100份阳离子光引发剂的树脂，其能够在暴露于光化辐射下引发所述环氧化树脂体系的聚合; 该系统的特征还在于，对于2.0密耳厚的膜，在330至700nm区域中的光的吸光度小于0.1。 任选地，可加入光敏剂如苝及其衍生物或蒽及其衍生物。
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17.发明申请METAL PEROXO COMPOUNDS WITH ORGANIC CO-LIGANDS FOR ELECTRON BEAM, DEEP UV AND EXTREME UV PHOTORESIST APPLICATIONS 有权具有电子束有机配体的金属过氧化合物，深紫外线和超紫外线光刻胶应用公开(公告)号：US20130224652A1
公开(公告)日：2013-08-29
申请号：US13405587
申请日：2012-02-27
申请人： John David Bass , Ho-Cheol Kim , Robert Dennis Miller , Qing Song , Linda Karin Sundberg , Gregory Michael Wallraff
发明人： John David Bass , Ho-Cheol Kim , Robert Dennis Miller , Qing Song , Linda Karin Sundberg , Gregory Michael Wallraff
CPC分类号： G03F7/0042
摘要： Compositions are disclosed having the formula (3): [C′]k[Ta(O2)x(L′)y] (3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L′)y has a charge of 0 to −3, C′ is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L′ is an oxidatively stable organic ligand having a charge of 0 to −4, and L′ comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.
摘要翻译： 公开了具有式（3）的组合物：[C'] k [Ta（O 2）x（L'）y]（3）其中x是1至4的整数，y是1至4的整数， Ta（O 2）x（L'）y具有0至-3的电荷，C'是具有+1至+3的电荷的抗衡离子，k是0至3的整数，L'是氧化稳定的有机物 具有0至-4电荷的配体，L'包括选自羧酸盐，醇盐，胺，氧化胺，膦，氧化膦，胂氧化物及其组合的给电子官能团。 该组合物具有作为高分辨率光致抗蚀剂的作用。
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公开(公告)号：US20110104900A1
公开(公告)日：2011-05-05
申请号：US12611043
申请日：2009-11-02
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/28123 , H01L29/517
摘要： Lithographic patterning methods involve the formation of a (one or more) metal oxide capping layer, which is rinsed with an aqueous alkaline solution as part of the method. The rinse solution does not damage the capping layer, but rather allows for lithographic processing without thinning the capping layer or introducing defects into it. Ammoniated water is a preferred rinse solution, which advantageously leaves behind no nonvolatile residue.
摘要翻译： 平版印刷图案方法包括形成（一种或多种）金属氧化物覆盖层，其作为该方法的一部分用碱性水溶液冲洗。 冲洗溶液不会损坏盖层，而是允许光刻处理，而不会使封盖层变薄或引入缺陷。 氨水是优选的漂洗溶液，其有利地不留下非挥发性残余物。
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19.发明授权公开(公告)号：US07585609B2
公开(公告)日：2009-09-08
申请号：US11492276
申请日：2006-07-25
CPC分类号： G03F7/095 , G03F7/0382 , G03F7/0392 , G03F7/094
摘要： The present invention provides methods for forming images in positive- or negative-tone chemically amplified photoresists. The methods of the present invention rely on the vertical up-diffusion of photoacid generated by patternwise imaging of an underlayer disposed on a substrate and overcoated with a polymer containing acid labile functionality. In accordance with the present invention, the vertical up-diffusion can be the sole mechanism for imaging formation or the methods of the present invention can be used in conjunction with conventional imaging processes.
摘要翻译： 本发明提供了在正或负色调化学放大的光致抗蚀剂中形成图像的方法。 本发明的方法依赖于通过对设置在基底上的底层的图案成像产生的光酸的垂直向上扩散，并且用含有酸不稳定性功能的聚合物涂覆。 根据本发明，垂直向上扩散可以是用于成像成像的唯一机构，或者本发明的方法可以与传统的成像过程结合使用。
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公开(公告)号：US06730452B2
公开(公告)日：2004-05-04
申请号：US09771261
申请日：2001-01-26
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/108
摘要： A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要翻译： 提供可用作化学扩增光致抗蚀剂的平版光刻胶组合物。 在优选的实施方案中，组合物对深紫外辐射即波长小于250nm（包括157nm，193nm和248nm辐射）的辐射基本上是透明的，并具有改进的灵敏度和分辨率。 组合物包含氟化乙烯基聚合物，特别是氟化甲基丙烯酸酯，氟化甲基丙烯腈或氟化甲基丙烯酸，以及光酸产生剂。 聚合物可以是均聚物或共聚物。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法，即在集成电路等的制造中。
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