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11.发明申请DIAGONAL HARDMASKS FOR IMPROVED OVERLAY IN FABRICATING BACK END OF LINE (BEOL) INTERCONNECTS 有权用于改进线路（BEOL）互连的后端改进的对角线公开(公告)号：US20150179513A1
公开(公告)日：2015-06-25
申请号：US14137588
申请日：2013-12-20
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528 , H01L21/033
CPC分类号： H01L23/5226 , H01L21/0337 , H01L21/31144 , H01L21/76808 , H01L21/76816 , H01L21/76879 , H01L21/76883 , H01L21/76897 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via and plug patterning using diagonal hardmasks for improved overlay in fabricating back end of line (BEOL) interconnects is described. In an example, a method of fabricating an interconnect structure for an integrated circuit involves forming a first hardmask layer above an interlayer dielectric layer disposed above a substrate. The first hardmask layer includes a plurality of first hardmask lines having a first grating in a first direction and comprising one or more sacrificial materials interleaved with the first grating. The method also involves forming a second hardmask layer above the first hardmask layer. The second hardmask layer includes a plurality of second hardmask lines having a second grating in a second direction, diagonal to the first direction. The method also involves, using the second hardmask layer as a mask, etching the first hardmask layer to form a patterned first hardmask layer. The etching involves removing a portion of the one or more sacrificial materials.
摘要翻译： 描述了使用对角线硬掩模进行自对准通孔和插头图案，以改进制造后端（BEOL）互连的覆盖。 在一个示例中，制造用于集成电路的互连结构的方法包括在布置在衬底上方的层间介电层上形成第一硬掩模层。 第一硬掩模层包括多个第一硬掩模线，其具有在第一方向上的第一光栅，并且包括与第一光栅交错的一个或多个牺牲材料。 该方法还涉及在第一硬掩模层之上形成第二硬掩模层。 第二硬掩模层包括多个第二硬掩模线，所述第二硬掩模线在第二方向上具有与第一方向对角的第二光栅。 该方法还涉及使用第二硬掩模层作为掩模，蚀刻第一硬掩模层以形成图案化的第一硬掩模层。 蚀刻涉及去除一个或多个牺牲材料的一部分。
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12.发明申请公开(公告)号：US20150171009A1
公开(公告)日：2015-06-18
申请号：US14133344
申请日：2013-12-18
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31144 , H01L21/76801 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.
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公开(公告)号：US20150179578A1
公开(公告)日：2015-06-25
申请号：US14139970
申请日：2013-12-24
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/5329 , H01L21/02203 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76808 , H01L21/7682 , H01L21/76822 , H01L21/76826 , H01L21/76838 , H01L23/528 , H01L23/53209 , H01L23/53223 , H01L23/53238 , H01L23/53257 , H01L23/53266 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： Techniques are disclosed for forming interconnects in porous dielectric materials. In accordance with some embodiments, the porosity of a host dielectric layer may be reduced temporarily by stuffing its pores with a sacrificial pore-stuffing material, such as titanium nitride (TiN), titanium dioxide (TiO2), or other suitable sacrificial material having a high etch selectivity compared to the metallization and dielectric material of the interconnect. After interconnect formation within the stuffed dielectric layer, the sacrificial pore-stuffing material can be removed from the pores of the host dielectric. In some cases, removal and curing can be performed with minimal or otherwise negligible effect on the dielectric constant (κ-value), leakage performance, and/or time-dependent dielectric breakdown (TDDB) properties of the host dielectric layer. Some embodiments can be utilized, for example, in processes involving atomic layer deposition (ALD)-based and/or chemical vapor deposition (CVD)-based backend metallization of highly porous, ultra-low-κ (ULK) dielectric materials.
摘要翻译： 公开了用于在多孔电介质材料中形成互连的技术。 根据一些实施例，可以通过用诸如氮化钛（TiN），二氧化钛（TiO 2）或其它合适的牺牲材料的牺牲孔填充材料填充其孔来临时减小主介质层的孔隙率， 与互连的金属化和介电材料相比，具有高蚀刻选择性。 在填充电介质层内形成互连之后，可以从主电介质的孔中去除牺牲孔填充材料。 在一些情况下，可以对介电常数（＆kgr--value），泄漏性能和/或时间依赖的介电击穿（TDDB）性能的最小或其他可忽略的影响进行去除和固化。 一些实施例可以用于例如涉及基于原子层沉积（ALD）的和/或化学气相沉积（CVD）的后端金属化的高度多孔，超低kgr的金属化过程。 （ULK）电介质材料。
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公开(公告)号：US07645368B2
公开(公告)日：2010-01-12
申请号：US11125720
申请日：2005-05-10
申请人： Alan M. Myers , Juan Santiago , Shuhuai Yao , Jonathan D. Posner
发明人： Alan M. Myers , Juan Santiago , Shuhuai Yao , Jonathan D. Posner
IPC分类号： F04F1/00
CPC分类号： F04B19/006 , F04B17/00 , F28F2250/08 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： According to some embodiments, a method, system, and apparatus for providing an orientation independent electroosmotic pump. In some embodiments, the method includes an anode and a cathode at different electrical potentials, the anode and cathode are each sealed in an ion-exchange membrane and at least partially immersed in an electrolyte contained in a reservoir of an electroosmotic pump, collecting gases generated by electrolytic decomposition of the electrolyte within a space defined by the ion-exchange membranes that seal the anode and cathode, recombining the collected gases to produce a liquid using a catalyst, the catalyst being located outside of the reservoir, and introducing the produced liquid into the fluid reservoir through an osmotic membrane.
摘要翻译： 根据一些实施例，一种用于提供取向独立电渗泵的方法，系统和装置。 在一些实施例中，该方法包括在不同电势下的阳极和阴极，阳极和阴极各自密封在离子交换膜中并且至少部分地浸入包含在电渗泵的储存器中的电解质中，收集产生的气体 通过在由密封阳极和阴极的离子交换膜限定的空间内电解分解电解质，使用催化剂将收集的气体重新组合以产生液体，催化剂位于储存器外部，并将所产生的液体引入 流体储存器通过渗透膜。
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15.发明授权Methods of forming channels on an integrated circuit die and die cooling systems including such channels 有权在集成电路管芯上形成通道的方法和包括这种通道的模具冷却系统公开(公告)号：US07358201B2
公开(公告)日：2008-04-15
申请号：US11110302
申请日：2005-04-19
IPC分类号： H01L21/00
CPC分类号： H01L23/473 , H01L2224/16 , H01L2224/73253 , H01L2924/01078 , H01L2924/15153 , H01L2924/15165 , H01L2924/15312 , H01L2924/16195
摘要： A method of forming channels on a die or other substrate. Also disclosed are liquid cooling systems including such channels.
摘要翻译： 在模具或其他基板上形成通道的方法。 还公开了包括这种通道的液体冷却系统。
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16.发明授权公开(公告)号：US06919231B1
公开(公告)日：2005-07-19
申请号：US10809560
申请日：2004-03-24
IPC分类号： H01L21/48 , H01L21/68 , H01L23/473 , H01L23/34
CPC分类号： H01L23/473 , H01L2224/16 , H01L2224/73253 , H01L2924/01078 , H01L2924/15153 , H01L2924/15165 , H01L2924/15312 , H01L2924/16195
摘要： A method of forming channels on a die or other substrate. Also disclosed are liquid cooling systems including such channels.
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17.发明申请公开(公告)号：US20080185714A1
公开(公告)日：2008-08-07
申请号：US12080682
申请日：2008-04-04
IPC分类号： H01L23/473
CPC分类号： H01L23/473 , H01L2224/16 , H01L2224/73253 , H01L2924/01078 , H01L2924/15153 , H01L2924/15165 , H01L2924/15312 , H01L2924/16195
摘要： A method of forming channels on a die or other substrate. Also disclosed are liquid cooling systems including such channels.
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18.发明申请Identification and characterization of a novel alpha-amylase from maize endosperm 失效来自玉米胚乳的新型α-淀粉酶的鉴定和表征公开(公告)号：US20080134363A1
公开(公告)日：2008-06-05
申请号：US11891589
申请日：2007-08-10
CPC分类号： C12N9/2422 , C12N15/8245 , C12P19/14
摘要： SHE, a Starch Hydrolytic Enzyme active in maize endosperm (Zea mays), and the cDNA sequence encoding SHE are disclosed. The specificity of native, purified SHE is similar, in general terms, to previously known alpha-amylases. However, the activity of SHE toward amylopectin results in hydrolysis products that are distinctly different from those of other alpha-amylases. SHE, and its homologous equivalents in other plants such as rice, Arabidopsis, apple and potato, can be used in starch processing for generating different, e.g., larger sized, alpha-limit dextrins for industrial use, as compared to those generated by previously known alpha-amylases or other starch hydrolytic enzymes. In addition, modification of the expression of this enzyme in transgenic maize plants or in other transgenic organisms (including bacteria, yeast, and other plant species) can be useful for the generation of novel starch forms or altered starch metabolism.
摘要翻译： SHE，在玉米胚乳（Zea mays）中活性的淀粉水解酶，以及编码SHE的cDNA序列。 天然纯化的SHE的特异性通常与以前已知的α-淀粉酶相似。 然而，SHE对支链淀粉的活性导致与其它α-淀粉酶明显不同的水解产物。 SHE及其在其他植物如水稻，拟南芥，苹果和马铃薯中的同源等同物可用于淀粉加工中，用于产生不同的，例如较大尺寸的工业用α限制糊精，与之前已知的 α-淀粉酶或其他淀粉水解酶。 此外，在转基因玉米植物或其他转基因生物（包括细菌，酵母和其他植物物种）中修饰该酶的表达可用于产生新的淀粉形式或改变的淀粉代谢。
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公开(公告)号：US07243705B2
公开(公告)日：2007-07-17
申请号：US11069540
申请日：2005-03-01
申请人： Alan M. Myers , Je-Young Chang , Ravi Prasher , Ioan Sauciuc , Gregory M. Chrysler , Patrick D. Boyd , Chia-pin Chiu
发明人： Alan M. Myers , Je-Young Chang , Ravi Prasher , Ioan Sauciuc , Gregory M. Chrysler , Patrick D. Boyd , Chia-pin Chiu
CPC分类号： H01L23/473 , F28F3/12 , H01L2924/0002 , H01L2924/00
摘要： An apparatus includes a microchannel structure having microchannels formed therein. The microchannels are to transport a coolant and to be proximate to an integrated circuit to transfer heat from the integrated circuit to the coolant. The apparatus also includes a cover positioned on the microchannel structure to define a respective upper wall of each of the microchannels. The cover presents a compliant surface to the microchannels.
摘要翻译： 一种装置包括其中形成有微通道的微通道结构。 微通道将输送冷却剂并靠近集成电路以将热量从集成电路传递到冷却剂。 该装置还包括位于微通道结构上的盖，以限定每个微通道的相应的上壁。 盖子提供微通道的柔顺表面。
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20.发明授权公开(公告)号：US07105382B2
公开(公告)日：2006-09-12
申请号：US10721441
申请日：2003-11-24
申请人： Alan M. Myers , Sarah E. Kim , R. Scott List
发明人： Alan M. Myers , Sarah E. Kim , R. Scott List
IPC分类号： H01L21/50
CPC分类号： H01L23/473 , H01L2224/16 , H01L2224/73253 , H01L2924/01078 , H01L2924/10158 , H01L2924/10253 , H01L2924/00
摘要： A device where the electrodes of an electroosmotic pump are located directly in the flow-producing region of the electroosmotic pump is described as well as methods of forming such a device. Placing the electrodes of an electroosmotic pump directly in the flow-producing region of the electroosmotic pump may increase the flow rate of a cooling fluid that is pumped through the pump. The cooling fluid may then remove a greater amount of heat from the substrate over which it is flowed. The substrate may be the non-device side of a die or a thermal management chip that is placed in direct contact with the non-device side of a die. In these instances the electroosmotic pump may be part of a microelectronic package containing the die or the thermal management chip.
摘要翻译： 描述电渗泵的电极直接位于电渗泵的流动产生区域中的装置以及形成这种装置的方法。 将电渗泵的电极直接放置在电渗泵的流动产生区域中可以增加泵送通过泵的冷却流体的流量。 然后，冷却流体可以从其流过的基底上移除更大量的热量。 衬底可以是与管芯的非器件侧直接接触的管芯或热管理芯片的非器件侧。 在这些情况下，电渗泵可以是包含管芯或热管理芯片的微电子封装的一部分。
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