摘要:
An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, a wiring electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a first insulator disposed on the piezoelectric substrate to seal the IDT electrode and the wiring electrode, a resin layer provided on the first insulator, an inductor electrode disposed on the resin layer, a second insulator disposed on the resin layer to cover the inductor electrode, a terminal electrode disposed on the second insulator, and a connecting electrode passing through the first insulator, the second insulator, and the resin layer to electrically connect the wiring electrode, the terminal electrode, and the inductor electrode. The first insulator includes a resin and filler dispersed in the resin. A density of filler in the resin layer is smaller than an average density of the filler in the first insulator. This elastic wave device has excellent characteristics of the inductor while reducing variations of the characteristics.
摘要:
An acoustic wave device includes a piezoelectric substrate, a first wiring disposed on an upper surface of the piezoelectric substrate, an organic insulator covering at least a portion of the first wiring, a second wiring disposed on a first portion of the upper surface of the organic insulator, and an inorganic insulator covering at least a second portion of an upper surface of the organic insulator. The second portion of the upper surface of the organic insulator faces an oscillation space across the inorganic insulator. The acoustic wave device has preferable high-frequency characteristics and high long-term reliability.
摘要:
An acoustic wave device includes a piezoelectric substrate, a first wiring disposed on an upper surface of the piezoelectric substrate, an organic insulator covering at least a portion of the first wiring, a second wiring disposed on a first portion of the upper surface of the organic insulator, and an inorganic insulator covering at least a second portion of an upper surface of the organic insulator. The second portion of the upper surface of the organic insulator faces an oscillation space across the inorganic insulator. The acoustic wave device has preferable high-frequency characteristics and high long-term reliability.
摘要:
An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.
摘要:
In a surface acoustic wave device, a common portion and a strip portion of a reflector electrode are partially cut off to increase a space between the electrodes. The increase of the space between the electrodes reduces the influence of the amount of charges and the influence of an unbalance between the amounts of charges in etching of a metallic film, thereby preventing the electrodes from having a curved shape in section. Consequently, the surface acoustic wave device has a reduced propagation loss.
摘要:
A SAW element of the present invention includes a plurality of inter-digital transducer (IDT) electrodes on a piezoelectric substrate, grating reflector electrodes disposed on the sides of the IDT electrodes, and a plurality of pad electrodes led from the IDT electrodes and the grating reflector electrodes. A plurality of the pad electrodes includes isolated pad electrodes not directly opposed to the outer periphery of the SAW element, and adjacent pad electrodes directly opposed to the outer periphery thereof A connecting electrode between the isolated pad electrode and the adjacent pad electrode is removed by etching at least before dicing in order to prevent discharge from occurring due to pyroelectricity, and to prevent the electrodes from being damaged.
摘要:
An acoustic wave element includes a piezoelectric substrate, an IDT electrode, a sidewall, a lid, and an adhesive layer. The IDT electrode is provided on the piezoelectric substrate. The sidewall is provided around the IDT electrode above the piezoelectric substrate. The lid is provided above the sidewall so as to cover a space above the IDT electrode. The adhesive layer is made of an adhesive provided between the lid and the sidewall. The top surface of the sidewall has a groove. The groove is filled with an adhesive, which reduces the protrusion amount of the adhesive.
摘要:
An under bump metal film formed on a substrate includes a diffusion-resistant barrier layer made of a platinum group metal film, and an aluminum-based stress relaxation layer formed under the diffusion-resistant barrier layer.
摘要:
An electronic component package comprises: an electronic component where device elements are mounted inside cavities formed between a component substrate and a component cover that covers the component substrate; and a mounting substrate. The component cover is placed on the mounting substrate, and the electronic component is mounted on the mounting substrate and molded by a resin. At least one of a ground electrode and a dummy electrode is provided on a surface of the component cover, the surface being placed on the mounting substrate. At least one of the ground electrode and the dummy electrode is provided in a position opposed to at least part of the cavities.
摘要:
An under bump metal film formed on a substrate includes a diffusion-resistant barrier layer made of a platinum group metal film, and an aluminum-based stress relaxation layer formed under the diffusion-resistant barrier layer.