公开(公告)号：US07588799B2

公开(公告)日：2009-09-15

申请号：US11319458

申请日：2005-12-29

申请人： Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

发明人： Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01J37/321 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/455 ,  H01J2237/2001

摘要： A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

摘要翻译： 源气体通过喷嘴供应到室中，并且电磁波从等离子体天线投入到室中。 所产生的Cl 2气体等离子体相对于等离子体天线中的电流的流动方向，以不连续状态配置在基板和顶板部件之间的多个铜突起进行蚀刻反应，形成前体（CuxCly）。 转移到被控制到比蚀刻部件的温度更低的温度的衬底的前体（CuxCly）通过还原反应被转换为仅仅Cu离子，并且指向衬底以在衬底的表面上形成薄的Cu膜。 成膜速度快，成本明显降低，生成的薄铜膜质量好。

公开(公告)号：US20070141274A1

公开(公告)日：2007-06-21

申请号：US11638510

申请日：2006-12-14

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H05H1/24 ,  H01L21/20 ,  C23C16/00 ,  H01L21/31

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

公开(公告)号：US07283346B2

公开(公告)日：2007-10-16

申请号：US10481425

申请日：2002-12-26

申请人： Kazuto Yoshida ,  Masahiko Inoue ,  Ryuichi Matsuda ,  Hitoshi Sakamoto

发明人： Kazuto Yoshida ,  Masahiko Inoue ,  Ryuichi Matsuda ,  Hitoshi Sakamoto

IPC分类号： H01T2/30

CPC分类号： H01L21/6833 ,  H02N13/00

摘要： An electrode pattern of an electrostatic chuck includes linear portions in a radial direction and a plurality of concentric C-shaped portions branching out from the linear portions. The linear portions are disposed opposite to each other in a diametrical direction and are such that they lie on a line that is almost straight. The C-shaped portions are engaged alternately like teeth of a comb.

摘要翻译： 静电卡盘的电极图案包括径向的直线部分和从直线部分分支出的多个同心的C形部分。 直线部分在直径方向上彼此相对设置，并且使得它们位于几乎直线的线上。 C形部分交替地与梳子的齿接合。

公开(公告)号：US07335315B2

公开(公告)日：2008-02-26

申请号：US10513396

申请日：2003-06-17

申请人： Ryuichi Matsuda ,  Yuichi Kawano ,  Masahiko Inoue

发明人： Ryuichi Matsuda ,  Yuichi Kawano ,  Masahiko Inoue

IPC分类号： G01L21/30

CPC分类号： H01L21/67253 ,  H01L21/67248 ,  H01L21/6831

摘要： The present invention attracts a wafer 6, placed on a susceptor 5, toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7, varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.

摘要翻译： 本发明通过静电卡盘电极7的静电吸引力吸引放置在基座5上的晶片6，从而使静电卡盘电极7的可变直流电源23的输出电压变化，同时测量 温度检测传感器21的晶片6的温度; 并且在晶片6的温度高峰时基于可变直流电源23的输出电压来检测晶片6的电位。

公开(公告)号：US20060027168A1

公开(公告)日：2006-02-09

申请号：US11240358

申请日：2005-10-03

申请人： Ryuichi Matsuda ,  Noriaki Ueda ,  Kazuto Yoshida

发明人： Ryuichi Matsuda ,  Noriaki Ueda ,  Kazuto Yoshida

IPC分类号： C23C16/00

CPC分类号： H01Q1/366 ,  H01Q7/00

摘要： A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

公开(公告)号：US20100236482A1

公开(公告)日：2010-09-23

申请号：US12681090

申请日：2008-10-14

申请人： Hidetaka Kafuku ,  Tadashi Shimazu ,  Ryuichi Matsuda ,  Akihiko Matsukura ,  Seiji Nishikawa

发明人： Hidetaka Kafuku ,  Tadashi Shimazu ,  Ryuichi Matsuda ,  Akihiko Matsukura ,  Seiji Nishikawa

IPC分类号： C23C16/34

CPC分类号： H01L21/68735 ,  C23C16/4585 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/318 ,  H01L21/3185

摘要： An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).

摘要翻译： 目的是提供即使在通过向基板施加偏压而形成膜的情况下也能够还原粒子的等离子体成膜装置。 在等离子体成膜装置中，其中偏置被施加到放置在腔室中的支撑台（4）上的衬底（5）上并且通过使用等离子体在衬底（5）上形成薄膜，支撑台（4） 具有与基板（5）接触的接触面的柱状支撑台主体（4b），所述接触面（4a）的外径（c）小于所述基板（5）的外径（W） ; 以及从所述支撑台主体（4b）的侧面（4d）向外周方向延伸的凸缘部（4c）。 其特征在于，在所述凸缘部（4c）与所述基板（5）的外周的后表面之间形成规定的第一间隙（G1）。

公开(公告)号：US20090127227A1

公开(公告)日：2009-05-21

申请号：US12065373

申请日：2007-02-15

申请人： Ryuichi Matsuda ,  Masahiko Inoue ,  Kazuto Yoshida ,  Tadashi Shimazu

发明人： Ryuichi Matsuda ,  Masahiko Inoue ,  Kazuto Yoshida ,  Tadashi Shimazu

IPC分类号： B44C1/22 ,  B05C11/00 ,  C23F1/08 ,  B01J19/08

CPC分类号： H01J37/32743 ,  H01J37/3244

摘要： Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).

摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，通过该处理方法在处理期间降低了等离子体损伤。 在对基板（5）进行期望的等离子体处理时，向处理室（2）供给用于进出基板（5）的惰性气体，将处理室（2）中的压力波动调整为 处于规定范围内，并且产生在处理室（2）中供应的惰性气体的等离子体（20）。 通过将等离子体功率控制在规定范围内，使衬底（5）的传送区域中的等离子体（20）的密度降低，并且将衬底（5）从支撑台（4） ）。

公开(公告)号：US20070224364A1

公开(公告)日：2007-09-27

申请号：US11797601

申请日：2007-05-04

申请人： Ryuichi Matsuda ,  Tadashi Shimazu ,  Masahiko Inoue

发明人： Ryuichi Matsuda ,  Tadashi Shimazu ,  Masahiko Inoue

IPC分类号： B05B5/025 ,  B05D1/04

CPC分类号： H01J37/321 ,  C23C16/507

摘要： A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.

摘要翻译： 公开了一种等离子体成膜装置（等离子体处理装置），其包括设置在天线11a周围并位于天花板表面外侧的第二天线11b，并且向第二天线11b提供沿着方向 与通过电源装置供给到天线11a的电流的方向相反，由此在与磁力线F 1相反的方向上的磁力线F 2出现在 天线11a在第二天线11b的位置产生。 因此，即使在管状容器2内的宽范围内产生均匀的等离子体，壁面方向的磁通密度降低。

公开(公告)号：US08960124B2

公开(公告)日：2015-02-24

申请号：US13322192

申请日：2010-05-24

申请人： Ryuichi Matsuda ,  Kazuto Yoshida ,  Yuichi Kawano

发明人： Ryuichi Matsuda ,  Kazuto Yoshida ,  Yuichi Kawano

IPC分类号： C23C16/00 ,  H01L21/00 ,  H01J37/32 ,  C23C16/44 ,  C23C16/50

CPC分类号： H01J37/32577 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/32467 ,  H01J37/32504 ,  Y10S156/916

摘要： Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.

摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，其中由于设置在真空容器内部的内筒的内部电位而产生的颗粒减少。 等离子体处理装置在金属真空室（11）的内部，由表面氧化铝构成的内筒（15）在等离子体扩散区域内配置基板，进行等离子体处理。 在内筒15的下端设有多个与真空室11相接触的突出部15a，每个的前端部15b的防蚀铝膜16， 突出部分（15a）被移除，并且内筒和真空室（11）彼此电连接。

公开(公告)号：US20120135164A1

公开(公告)日：2012-05-31

申请号：US13376067

申请日：2010-05-24

申请人： Ryuichi Matsuda ,  Kazuto Yoshida

发明人： Ryuichi Matsuda ,  Kazuto Yoshida

IPC分类号： C23C16/458 ,  C23C16/50

CPC分类号： H01L21/68785 ,  C23C16/4412 ,  H01L21/68792

摘要： Provided are a plasma processing apparatus and a plasma processing method, wherein a substrate supporting table is supported such that nonuniformity of heat release is eliminated and maintenance is facilitated. In the plasma CVD apparatus (10), a supporting beam (12), which has inside thereof a through hole (12c) penetrating the facing side walls (11a) of a vacuum chamber (11) and traverses the vacuum chamber (11) by passing through the center of the vacuum chamber, is integrally formed with the vacuum chamber (11). In the center portion of the upper surface of the supporting beam (12), an upper surface opening (12a) for attaching a substrate supporting table (13) is provided, and a substrate supporting table (13) having a cylindrical shape is attached to the upper surface opening (12a) by having therebetween a first seal member that seals together the vacuum side and the atmosphere side.

摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，其中支撑基板支撑台以消除不均匀的热释放并且便于维护。 在等离子体CVD装置（10）中，支撑梁（12）的内部具有穿过真空室（11）的相对侧壁（11a）的通孔（12c），并通过真空室（11）横穿真空室 通过真空室的中心与真空室（11）整体形成。 在支撑梁（12）的上表面的中心部分设置有用于安装基板支撑台（13）的上表面开口（12a），并且将具有圆柱形状的基板支撑台（13）安装到 上表面开口（12a）之间具有将真空侧和大气侧密封在一起的第一密封构件。