公开(公告)号：US07433759B2

公开(公告)日：2008-10-07

申请号：US10898301

申请日：2004-07-23

申请人： Roy C. Nangoy

发明人： Roy C. Nangoy

IPC分类号： G06F19/00

CPC分类号： H01L21/681

摘要： A method for calibrating a controller of a robotic arm in a microelectronics manufacturing apparatus that includes storing a default position for an edge detector, moving a blade on the robotic arm based on the default position of the edge detector such that at least three edge points on the blade pass through and are detected by the edge detector, generating a plurality of arm position measurements from an arm position sensor by measuring a position with the arm position sensor of the robotic arm at each position of the robotic arm at which an edge point of the blade is detected by the edge detector, and determining at least one of an actual position of the edge detector and an offset for measurements of the arm position sensor based on the plurality of arm position measurements.

摘要翻译： 一种用于校准微电子制造装置中的机器人臂的控制器的方法，其包括存储用于边缘检测器的默认位置，基于边缘检测器的默认位置移动机器人臂上的刀片，使得至少三个边缘点在 刀片通过并由边缘检测器检测，通过在机器人臂的每个位置处测量与机器人臂的臂位置传感器的位置，从臂位置传感器产生多个臂位置测量，其中边缘点 刀片由边缘检测器检测，并且基于多个臂位置测量来确定边缘检测器的实际位置和用于臂位置传感器的测量的偏移中的至少一个。

公开(公告)号：US20090272717A1

公开(公告)日：2009-11-05

申请号：US12407548

申请日：2009-03-19

申请人： Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

发明人： Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

IPC分类号： C23F1/00

CPC分类号： H01L21/30655 ,  Y10T137/0318 ,  Y10T137/87169

摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.

摘要翻译： 本发明的实施例涉及一种基板蚀刻系统和工艺。 在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率 在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。 在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到 该室用于促进在进出室和面板之间的气体之间的快速气体转变。

公开(公告)号：US20080156360A1

公开(公告)日：2008-07-03

申请号：US11961587

申请日：2007-12-20

申请人： Donald J.K. Olgado ,  Sheshraj L. Tulshibagwale ,  Thomas B. Brezoczky ,  John S. Lewis ,  Ho Seon Shin ,  Hui Chen ,  Roy C. Nangoy

发明人： Donald J.K. Olgado ,  Sheshraj L. Tulshibagwale ,  Thomas B. Brezoczky ,  John S. Lewis ,  Ho Seon Shin ,  Hui Chen ,  Roy C. Nangoy

IPC分类号： B08B3/00

CPC分类号： B08B3/00 ,  B08B3/04 ,  B08B3/12

摘要： Embodiments of the present invention relate to semiconductor device manufacturing, and more particularly to a horizontal megasonic module for cleaning substrates. In one embodiment an apparatus for cleaning a substrate is provided. The apparatus comprises a tank adapted to contain a cleaning fluid, a movable housing having a first side adapted to be placed in the cleaning fluid, a plurality of rotatable rollers coupled to the first side of the housing, the rollers positioned and including grooves to securely hold the substrate in a horizontal orientation, and one or more transducers adapted to direct vibrational energy through the cleaning fluid in the tank toward the substrate, wherein at least one of the transducers directs vibrational energy toward the substrate and substantially parallel to a major surface of the substrate.

摘要翻译： 本发明的实施例涉及半导体器件制造，更具体地涉及用于清洁衬底的水平兆声模块。 在一个实施例中，提供了一种用于清洁基底的装置。 该设备包括适于容纳清洁流体的罐，具有适于放置在清洁流体中的第一侧的可移动壳体，与壳体的第一侧耦合的多个可旋转辊，辊定位并包括槽以牢固地 将所述基板保持在水平方向，以及一个或多个换能器，其适于将振动能量引导通过所述罐中的所述清洁流体朝向所述基板，其中所述换能器中的至少一个将振动能量引向所述基板并基本上平行于 底物。

公开(公告)号：US20080156359A1

公开(公告)日：2008-07-03

申请号：US11963458

申请日：2007-12-21

申请人： DONALD J.K. OLGADO ,  Ho Seon Shin ,  Sheshraj L. Tulshibagwale ,  Roy C. Nangoy ,  Hui Chen ,  Allen L. D'Ambra

发明人： DONALD J.K. OLGADO ,  Ho Seon Shin ,  Sheshraj L. Tulshibagwale ,  Roy C. Nangoy ,  Hui Chen ,  Allen L. D'Ambra

IPC分类号： B08B3/00

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67207

摘要： Embodiments of the invention generally relate to a modular, configurable system in which distinct cleaning and drying modules can be arranged in different combinations selectable by a user of the system. In one embodiment a configurable system for substrate cleaning is provided. The configurable system provides a frame including first and second bays, the first and second bays each adapted to hold one or more cleaning or drying modules, and a transfer area positioned between the first and second bays including a robot adapted to move substrates to and from the one or more modules positioned within the first and second bays, wherein the frame is adapted to hold a user selectable set of one or more cleaning or drying modules in the first and second bays.

摘要翻译： 本发明的实施例一般涉及模块化的可配置系统，其中不同的清洁和干燥模块可以以由系统的用户选择的不同组合来布置。 在一个实施例中，提供了一种用于衬底清洁的可配置系统。 可配置系统提供包括第一和第二托架的框架，每个适于保持一个或多个清洁或干燥模块的第一和第二托架以及定位在第一和第二托架之间的传送区域，包括适于将基板移动到和从 一个或多个模块定位在第一和第二托架内，其中框架适于在第一和第二托架中容纳用户可选择的一个或多个清洁或干燥模块组。

公开(公告)号：US08920599B2

公开(公告)日：2014-12-30

申请号：US13270623

申请日：2011-10-11

申请人： Jivko Dinev ,  Saravjeet Singh ,  Roy C. Nangoy

发明人： Jivko Dinev ,  Saravjeet Singh ,  Roy C. Nangoy

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  C23C16/507

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J37/3211

摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.

摘要翻译： 本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。 一个实施例提供等离子体室。 等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。 等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。

公开(公告)号：US08753474B2

公开(公告)日：2014-06-17

申请号：US12878582

申请日：2010-09-09

申请人： Roy C. Nangoy ,  Saravjeet Singh ,  Jon C. Farr ,  Sharma V. Pamarthy ,  Ajay Kumar

发明人： Roy C. Nangoy ,  Saravjeet Singh ,  Jon C. Farr ,  Sharma V. Pamarthy ,  Ajay Kumar

IPC分类号： H01L21/3065 ,  H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67

CPC分类号： H01L21/3065 ,  C23C16/45508 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32458 ,  H01L21/30655 ,  H01L21/67069

摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.

摘要翻译： 本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。 本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。 处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

公开(公告)号：US20130000731A1

公开(公告)日：2013-01-03

申请号：US13456006

申请日：2012-04-25

申请人： Saravjeet SINGH ,  Roy C. Nangoy

发明人： Saravjeet SINGH ,  Roy C. Nangoy

IPC分类号： F16K11/20

CPC分类号： H01L21/67017 ,  H01L21/6719 ,  Y10T137/0318 ,  Y10T137/87096

摘要： Embodiments of the invention relate to a gas delivery system. The gas delivery system includes a fast gas exchange module in fluid communication with one or more gas panels and a process chamber. The fast gas exchange module has first and second sets of flow controllers and each of first and second sets of flow controllers has multiple flow controllers. The flow controller is configured such that each of the flow controllers in the first and second sets of the flow controllers is independently operated to selectively open to divert gas to the process chamber or an exhaust. The first and second sets of flow controllers are operated for synchronized switching of gases in a pre-determined timed sequence of flow controller actuation. The invention enables fast switch of resultant gas flow in the process chamber while having individual flow controller operated at lower switching speed to provide longer service life.

摘要翻译： 本发明的实施例涉及一种气体输送系统。 气体输送系统包括与一个或多个气体板和处理室流体连通的快速气体交换模块。 快速气体交换模块具有第一和第二组流量控制器，并且第一和第二组流量控制器中的每一个具有多个流量控制器。 流量控制器被配置为使得第一和第二组流量控制器中的每个流量控制器被独立地操作以选择性地打开以将气体转移到处理室或排气口。 第一和第二组流量控制器用于以预定的流量控制器致动的定时顺序同步切换气体。 本发明能够在处理室中快速切换合成气流，同时具有以较低切换速度操作的各个流量控制器以提供更长的使用寿命。

公开(公告)号：US09117868B1

公开(公告)日：2015-08-25

申请号：US14458016

申请日：2014-08-12

申请人： Roy C. Nangoy

发明人： Roy C. Nangoy

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/78 ,  H01L21/67

CPC分类号： H01L21/6833 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/78

摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. A bipolar electrostatic chuck is disposed below the plasma source. The bipolar electrostatic chuck is sized to support a substrate carrier having a tape and tape frame. The bipolar electrostatic chuck is configured to control a backside temperature of the substrate carrier prior to and during plasma processing.

摘要翻译： 对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。 在一个示例中，等离子体蚀刻室包括设置在等离子体蚀刻室的上部区域中的等离子体源。 双极静电卡盘位于等离子体源的下方。 双极静电卡盘的尺寸设计成支撑具有带和带框架的基板载体。 双极静电卡盘被配置为在等离子体处理之前和期间控制衬底载体的背面温度。

公开(公告)号：US09034771B1

公开(公告)日：2015-05-19

申请号：US14286424

申请日：2014-05-23

申请人： Roy C. Nangoy

发明人： Roy C. Nangoy

IPC分类号： H01L21/302 ,  H01L21/82 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/673

CPC分类号： H01L21/82 ,  H01J37/32091 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/673 ,  H01L21/78

摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. The plasma etch chamber also includes a cathode assembly disposed below the plasma source. The cathode assembly includes a cooling RF-powered chuck for supporting an inner portion of a backside of a substrate carrier. The cathode assembly also includes a cooling RF-isolated support surrounding but isolated from the RF-powered chuck. The RF-isolated support is for supporting an outer portion of the backside of the substrate carrier.

摘要翻译： 对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。 在一个示例中，等离子体蚀刻室包括设置在等离子体蚀刻室的上部区域中的等离子体源。 等离子体蚀刻室还包括设置在等离子体源下方的阴极组件。 阴极组件包括用于支撑衬底载体的背面的内部的冷却RF供电的卡盘。 阴极组件还包括围绕但与RF供电的卡盘隔离的冷却的RF隔离支架。 RF隔离支撑件用于支撑衬底载体的背面的外部部分。

公开(公告)号：US20120091098A1

公开(公告)日：2012-04-19

申请号：US13270623

申请日：2011-10-11

申请人： Jivko Dinev ,  Saravjeet Singh ,  Roy C. Nangoy

发明人： Jivko Dinev ,  Saravjeet Singh ,  Roy C. Nangoy

IPC分类号： C23F1/00 ,  C23C16/448 ,  C23C16/513 ,  C23F1/08

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J37/3211

摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.

摘要翻译： 本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。 一个实施例提供等离子体室。 等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。 等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。