公开(公告)号：US20160240250A1

公开(公告)日：2016-08-18

申请号：US15044301

申请日：2016-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUN CHU OH ,  YOUNG-GEON YOO ,  JUN JIN KONG ,  HONG-RAK SON ,  HAN-SHIN SHIN

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G06F11/1048 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5657 ,  G11C11/5664 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0026 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2213/72

Abstract: A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.

Abstract translation: 一种用于操作包括被实现为多级存储器单元的电阻性存储器件的电阻式存储器系统的方法。 该方法包括设置用于确定多电平存储器单元的电阻状态的参考电压的电平，以及基于参考电压读取多电平存储器单元的数据。 用于确定相对高电阻状态的参考电压之间的差异大于用于确定相对低电阻状态的参考电压之间的差。

公开(公告)号：US20160232971A1

公开(公告)日：2016-08-11

申请号：US15012881

申请日：2016-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： PIL-SANG YOON ,  EUN-CHU OH ,  JUN-JIN KONG ,  HONG-RAK SON ,  DONG-MIN SHIN

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C11/5607 ,  G11C11/5657 ,  G11C11/5664 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0076 ,  G11C2013/0085 ,  G11C2213/72

Abstract: A method of operating a memory device including a plurality of memory cells is provided. The method includes receiving a first write command, determining whether a target memory cell is deteriorated or not, in response to the first write command, and writing the second data by selectively erasing the target memory cell according to a result of the determination and by programming the target memory cell.

Abstract translation: 提供一种操作包括多个存储单元的存储器件的方法。 该方法包括响应于第一写入命令，接收第一写命令，确定目标存储器单元是否恶化，以及根据确定结果选择性地擦除目标存储器单元并通过编程来写入第二数据 目标存储单元。

公开(公告)号：US20160041783A1

公开(公告)日：2016-02-11

申请号：US14696609

申请日：2015-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONG-HYEOG CHOI ,  JUN-JIN KONG ,  HONG-RAK SON ,  PIL-SANG YOON ,  CHANG-KYU SEOL ,  KI-JUN LEE

IPC: G06F3/06 ,  G11C29/52 ,  G06F11/10

CPC classification number: G11C29/52 ,  G06F11/1048 ,  G11C2029/0411

Abstract: A method of operating a memory system, having a non-volatile memory device, includes processing a response to a first request toward the memory device by using an original key, in response to the first request, generating and storing first parity data corresponding to the original key, and deleting the original key.

Abstract translation: 一种操作具有非易失性存储设备的存储系统的方法，包括响应于第一请求，通过使用原始密钥来处理对存储器设备的第一请求的响应，生成并存储对应于 原始键，并删除原始键。

公开(公告)号：US20150103596A1

公开(公告)日：2015-04-16

申请号：US14446350

申请日：2014-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： AVNER DOR ,  MOSHE TWITTO ,  JUN-JIN KONG ,  HONG-RAK SON ,  YOUNG-GEON YOO

IPC: G11C16/10 ,  G11C16/08

CPC classification number: G11C16/10 ,  G06F11/1048 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08

Abstract: Provided are a coding/decoding method for use in a multi-level memory system. The coding method includes searching for a set of symbols that may generate a forbidden pattern that is set initially from an input data stream, and sticking at least one bit included in the searched set of the symbols that may generate the forbidden pattern so as not to generate the forbidden pattern.

Abstract translation: 提供了一种用于多级存储器系统中的编码/解码方法。 编码方法包括搜索可以生成最初从输入数据流设置的禁止模式的一组符号，并且将包含在搜索到的可能生成禁止模式的符号组中的至少一个比特，以便不 生成禁止的模式。