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公开(公告)号：US20240258366A1
公开(公告)日：2024-08-01
申请号：US18350397
申请日：2023-07-11
发明人： Changsoo LEE , Jinhong KIM , Cheheung KIM , Jooho LEE , Yong-Hee CHO
IPC分类号： H10B12/00
CPC分类号： H01L28/90 , H10B12/315
摘要： A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.
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公开(公告)号：US20240258365A1
公开(公告)日：2024-08-01
申请号：US18541848
申请日：2023-12-15
发明人： Jinhong KIM , Changsoo LEE , Cheheung KIM , Jooho LEE
CPC分类号： H01L28/75 , H01G4/008 , H01G4/10 , H10B12/315
摘要： Provided is a capacitor including a first thin film electrode layer, a second thin film electrode layer, a dielectric layer disposed between the first thin film electrode layer and the second thin film electrode layer, and an interlayer disposed between the second thin film electrode layer and the dielectric layer. Due to the interlayer, the decrease in permittivity of the dielectric layer is small while leakage current may be effectively reduced.
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13.发明公开公开(公告)号：US20240170214A1
公开(公告)日：2024-05-23
申请号：US18479747
申请日：2023-10-02
发明人： Woochul LEE , Cheheung KIM , Jiwoon PARK , Jooho LEE , Hojin LEE
CPC分类号： H01G4/1218 , H01G4/008 , H01G4/306
摘要： An electronic device and a manufacturing method including a dielectric layer according to at least some embodiments are disclosed. The electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a first dielectric layer between the first electrode and the second electrode, a second dielectric layer having a rutile phase, a third dielectric layer between the first dielectric layer and the second electrode, and a third dielectric layer between the second dielectric layer and the second electrode and including a material having a higher energy bandgap than a material included in the second dielectric layer.
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公开(公告)号：US20230402497A1
公开(公告)日：2023-12-14
申请号：US18312383
申请日：2023-05-04
发明人： Hyungjun KIM , Boeun PARK , Jeongil BANG , Cheheung KIM , Jooho LEE
摘要： A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.
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公开(公告)号：US20230063896A1
公开(公告)日：2023-03-02
申请号：US17705818
申请日：2022-03-28
发明人： Euncheol DO , Byunghoon NA , Kiyoung LEE , Jooho LEE
摘要： Provided are a capacitor and a method for manufacturing the capacitor, the capacitor including: a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer, including a binary metal oxide, between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer, including an anionized layer, between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer. The interlayer has a same type of crystal structure as and a different composition from the dielectric layer, and the anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation.
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公开(公告)号：US20220328616A1
公开(公告)日：2022-10-13
申请号：US17853290
申请日：2022-06-29
发明人： Jeongil BANG , Seungwoo JANG , Hyosik MUN , Younggeun PARK , Jooho LEE
IPC分类号： H01L49/02 , H01L27/11507
摘要： A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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公开(公告)号：US20220157823A1
公开(公告)日：2022-05-19
申请号：US17592555
申请日：2022-02-04
发明人： Kyooho JUNG , Jeong-gyu SONG , Younsoo KIM , Jooho LEE
IPC分类号： H01L27/108 , H01L49/02 , H01L21/02
摘要： Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.
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公开(公告)号：US20210115564A1
公开(公告)日：2021-04-22
申请号：US16827862
申请日：2020-03-24
发明人： Bo-Eun PARK , Jooho LEE , Yongsung KIM , Jeonggyu SONG
IPC分类号： C23C16/56 , H01L27/11585 , H01L27/11502 , C23C16/455 , C23C14/58 , C23C14/08 , C23C16/40 , C01G27/02
摘要： A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.
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公开(公告)号：US20200273698A1
公开(公告)日：2020-08-27
申请号：US16520990
申请日：2019-07-24
发明人： Jeonggyu SONG , Kyooho JUNG , Yongsung KIM , Jeongil BANG , Jooho LEE , Junghwa KIM , Haeryong KIM , Myoungho JEONG
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66 , H01L21/768
摘要： A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.
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公开(公告)号：US20170069436A1
公开(公告)日：2017-03-09
申请号：US15066780
申请日：2016-03-10
发明人： Jooho LEE , Yongsung KIM , Changseung LEE
摘要： Example embodiments relate to a method of fabricating a graphene nano-mesh by selectively growing an oxide layer on a defect site of a graphene layer and etching the oxide layer to form the graphene nano-mesh. The method includes forming a graphene layer on a catalyst layer, forming an oxide layer on a defect site of the graphene layer, forming the graphene nano-mesh including a plurality of openings by etching the oxide layer, and transferring, after removing the catalyst layer, the graphene nano-mesh onto a substrate.
摘要翻译： 示例性实施例涉及通过选择性地生长石墨烯层的缺陷部位上的氧化物层并蚀刻氧化物层以形成石墨烯纳米网来制造石墨烯纳米网的方法。 该方法包括在催化剂层上形成石墨烯层，在石墨烯层的缺陷部位形成氧化层，通过蚀刻氧化层形成包括多个开口的石墨烯纳米网，并且在除去催化剂层之后转移 ，石墨烯纳米网到基底上。
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