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公开(公告)号：US10304919B2
公开(公告)日：2019-05-28
申请号：US15966640
申请日：2018-04-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yasuhiro Jinbo , Kohei Yokoyama , Yuki Tamatsukuri , Naoto Goto , Masami Jintyou , Masayoshi Dobashi , Masataka Nakada , Akihiro Chida , Naoyuki Senda
Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.
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公开(公告)号：US10249768B2
公开(公告)日：2019-04-02
申请号：US15935324
申请日：2018-03-26
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junichi Koezuka , Masami Jintyou , Yukinori Shima , Daisuke Kurosaki , Masataka Nakada , Shunpei Yamazaki
IPC: H01L29/10 , H01L29/786 , H01L27/12
Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.
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公开(公告)号：US09653523B2
公开(公告)日：2017-05-16
申请号：US14690834
申请日：2015-04-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Naoyuki Senda , Masataka Nakada , Takayuki Abe , Koji Kusunoki , Hideaki Shishido
Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.
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公开(公告)号：US09653487B2
公开(公告)日：2017-05-16
申请号：US14612817
申请日：2015-02-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kenichi Okazaki , Masataka Nakada , Masahiro Katayama
IPC: H01L27/12
CPC classification number: H01L27/1225 , H01L27/1248 , H01L27/1255 , H01L27/1259 , H01L28/60 , H01L29/24 , H01L29/42384 , H01L29/4908 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.
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公开(公告)号：US09640669B2
公开(公告)日：2017-05-02
申请号：US14640379
申请日：2015-03-06
Applicant: Semiconductor Energy Laboratory Co., LTD.
Inventor： Shunpei Yamazaki , Junichi Koezuka , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Masataka Nakada
IPC: H01L21/469 , H01L29/786 , H01L21/34 , H01L21/36 , H01L29/24 , H01L29/04 , H01L29/66
CPC classification number: H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/36 , H01L29/66969 , H01L29/78606 , H01L29/78621 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.
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Patent Agency Ranking
公开(公告)号：US09412876B2
公开(公告)日：2016-08-09
申请号：US14608224
申请日：2015-01-29
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junichi Koezuka , Masami Jintyou , Yukinori Shima , Daisuke Kurosaki , Masataka Nakada , Shunpei Yamazaki
CPC classification number: H01L29/78693 , H01L27/1225 , H01L27/1251 , H01L29/78606 , H01L29/7869 , H01L29/78696
Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.
Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。
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公开(公告)号：US12057459B2
公开(公告)日：2024-08-06
申请号：US17830546
申请日：2022-06-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junichi Koezuka , Masami Jintyou , Yukinori Shima , Daisuke Kurosaki , Masataka Nakada , Shunpei Yamazaki
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1251 , H01L27/1225 , H01L27/1237 , H01L27/124 , H01L29/78603 , H01L29/78645 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.
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公开(公告)号：US11940703B2
公开(公告)日：2024-03-26
申请号：US18202557
申请日：2023-05-26
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kouhei Toyotaka , Kazunori Watanabe , Susumu Kawashima , Kei Takahashi , Koji Kusunoki , Masataka Nakada , Ami Sato
IPC: G02F1/1368 , G02F1/1362
CPC classification number: G02F1/1368 , G02F1/136227
Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween. The pixel includes a first connection portion where the pixel electrode is electrically connected to the transistor and a second connection portion where the first conductive layer is electrically connected to the common electrode. The first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.
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公开(公告)号：US11908976B2
公开(公告)日：2024-02-20
申请号：US18096691
申请日：2023-01-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiaki Oikawa , Shingo Eguchi , Mitsuo Mashiyama , Masatoshi Kataniwa , Hironobu Shoji , Masataka Nakada , Satoshi Seo
IPC: H01L33/44 , H01L51/52 , H01L51/56 , H01L51/00 , H10K50/84 , H10K50/844 , H10K71/00 , H10K71/80 , H10K59/12
CPC classification number: H01L33/44 , H10K50/84 , H10K50/841 , H10K50/844 , H10K71/00 , H10K71/80 , H10K59/1201
Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
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公开(公告)号：US11733574B2
公开(公告)日：2023-08-22
申请号：US16956623
申请日：2018-12-25
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kouhei Toyotaka , Kazunori Watanabe , Susumu Kawashima , Kei Takahashi , Koji Kusunoki , Masataka Nakada , Ami Sato
IPC: G02F1/1368 , G02F1/1362
CPC classification number: G02F1/1368 , G02F1/136227
Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween. The pixel includes a first connection portion where the pixel electrode is electrically connected to the transistor and a second connection portion where the first conductive layer is electrically connected to the common electrode. The first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.
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