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公开(公告)号：US20170054140A1
公开(公告)日：2017-02-23
申请号：US15343716
申请日：2016-11-04
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kenryo NANBA , Mikio YUKAWA
IPC: H01M4/139 , H01M4/62 , H01M10/0525 , B32B37/10 , B32B37/14 , B32B27/00 , B32B5/02 , B32B21/06 , B32B15/08 , B32B15/12 , B32B15/14 , B32B3/30 , H01M4/04 , B32B37/24
CPC classification number: H01M4/139 , B32B3/30 , B32B5/022 , B32B15/08 , B32B15/12 , B32B15/14 , B32B21/06 , B32B27/00 , B32B37/10 , B32B37/144 , B32B37/24 , B32B2037/243 , B32B2255/06 , B32B2255/20 , B32B2305/02 , B32B2305/20 , B32B2307/202 , B32B2307/206 , B32B2317/12 , B32B2457/10 , H01M4/0404 , H01M4/0435 , H01M4/0471 , H01M4/049 , H01M4/625 , H01M10/0525 , H01M2220/30 , Y02E60/122 , Y02P70/54
Abstract: To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.
Abstract translation: 提供一种包含含有较小百分比的导电添加剂的高密度活性物质层的蓄电池电极。 为了提供一种具有使用电池用蓄电池的每单位体积电极的容量的蓄电池。 将含有活性物质和石墨烯氧化物的浆液施加到集电体上并干燥，在集电体上形成活性物质层，集电体上方的活性物质层与间隔物一起卷起，轧制电极 包括将间隔物浸入还原溶液中以使氧化石墨烯被还原。
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公开(公告)号：US20150144858A1
公开(公告)日：2015-05-28
申请号：US14614961
申请日：2015-02-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
CPC classification number: H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
Abstract translation: 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。
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公开(公告)号：US20150064565A1
公开(公告)日：2015-03-05
申请号：US14507872
申请日：2014-10-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
Abstract translation: 石墨烯的形成方法包括在第一导电层上形成包括氧化石墨烯的层的步骤; 并且在其中浸入作为工作电极的第一导电层和作为对电极的第二导电层的电解质中，提供氧化石墨烯的还原反应发生到第一导电层的电位。 至少包括正电极，负极，电解质和隔膜的蓄电装置的制造方法包括通过所述正极和负极中的一个或两个的活性物质层形成石墨烯的步骤 形成方法。
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公开(公告)号：US20210036303A1
公开(公告)日：2021-02-04
申请号：US17069004
申请日：2020-10-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Mikio YUKAWA
IPC: H01M4/04 , H01M4/64 , H01M4/13 , H01M4/136 , H01M4/139 , H01M4/1397 , H01M10/0525 , H01M4/62 , H01M4/36 , H01M4/58
Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.
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公开(公告)号：US20200373581A1
公开(公告)日：2020-11-26
申请号：US16986372
申请日：2020-08-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Mikio YUKAWA , Yumiko SAITO , Masaki YAMAKAJI , Rika YATABE , Tatsuya IKENUMA
Abstract: A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the atomic ratio of oxygen to carbon is greater than or equal to 0.405.
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Patent Agency Ranking
公开(公告)号：US20200052299A1
公开(公告)日：2020-02-13
申请号：US16599944
申请日：2019-10-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
IPC: H01M4/583 , H01G11/36 , H01M10/0566 , H01M6/16 , H01M4/62 , H01M4/139 , H01G9/042 , H01G11/32 , H01M4/133 , H01G11/22 , C01B32/192 , C01B32/23 , B82Y40/00 , B82Y30/00 , H01M4/1393 , H01M4/587 , H01M4/04
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
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公开(公告)号：US20160358977A1
公开(公告)日：2016-12-08
申请号：US15174293
申请日：2016-06-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
CPC classification number: H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
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公开(公告)号：US20160204440A1
公开(公告)日：2016-07-14
申请号：US15075387
申请日：2016-03-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Mikio YUKAWA , Yumiko SAITO , Masaki YAMAKAJI , Rika YATABE , Tatsuya IKENUMA
IPC: H01M4/62 , C01B31/04 , H01M10/052 , H01M4/58 , H01M4/36
CPC classification number: H01M4/625 , C01B32/23 , H01M4/136 , H01M4/364 , H01M4/366 , H01M4/5825 , H01M4/624 , H01M10/052
Abstract: A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405.
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公开(公告)号：US20230307639A1
公开(公告)日：2023-09-28
申请号：US18205264
申请日：2023-06-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
IPC: H01M4/583 , H01G11/22 , H01M4/133 , H01G11/32 , H01M4/04 , H01M4/587 , H01M4/1393 , B82Y30/00 , B82Y40/00 , C01B32/23 , C01B32/192 , H01G9/042 , H01M4/139 , H01M4/62 , H01M6/16 , H01M10/0566 , H01G11/36
CPC classification number: H01M4/5835 , H01G11/22 , H01M4/133 , H01G11/32 , H01M4/0438 , H01M4/587 , H01M4/1393 , B82Y30/00 , B82Y40/00 , C01B32/23 , C01B32/192 , H01G9/042 , H01M4/139 , H01M4/62 , H01M6/16 , H01M10/0566 , H01G11/36 , Y02E60/13 , H01M10/0525
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
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20.发明申请公开(公告)号：US20160104892A1
公开(公告)日：2016-04-14
申请号：US14970733
申请日：2015-12-16
Applicant: Semiconductor Energy Laboratory Co., LTD.
Inventor： Mikio YUKAWA
CPC classification number: H01M4/0404 , H01M4/0416 , H01M4/043 , H01M4/0435 , H01M4/0471 , H01M4/049 , H01M4/13 , H01M4/136 , H01M4/139 , H01M4/1397 , H01M4/366 , H01M4/5805 , H01M4/5825 , H01M4/62 , H01M4/625 , H01M4/64 , H01M10/0525 , H01M2220/30 , Y02E60/122 , Y02P70/54
Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.
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