公开(公告)号：US09882085B2

公开(公告)日：2018-01-30

申请号：US15040969

申请日：2016-02-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Su Jin Shin ,  Ki Bum Nam ,  Yu Dae Han ,  A Ram Cha Lee

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/00 ,  H01L33/20 ,  H01L21/02 ,  H01L29/06 ,  H01L33/02

CPC classification number: H01L33/24 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0657 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

公开(公告)号：US09373496B2

公开(公告)日：2016-06-21

申请号：US14085876

申请日：2013-11-21

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Joo Won Choi ,  Chang Yeon Kim ,  Jeong Hoon Heo ,  Young Wug Kim ,  Su Yeon Hong ,  Sang Wan Ryu

IPC: H01L21/302 ,  H01L21/02 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01L21/02032 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract translation: 本发明的示例性实施方案提供了基材回收方法和再循环基材。 该方法包括将具有第一表面的衬底与外延层分离，使用电化学蚀刻来执行第一表面的第一蚀刻，以及在第一蚀刻之后，使用化学蚀刻，干蚀刻或 在第一次蚀刻之后进行第一表面的化学机械抛光。

公开(公告)号：US20150318436A1

公开(公告)日：2015-11-05

申请号：US14436068

申请日：2013-08-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Young Wug Kim ,  Su Jin Shin ,  Su Youn Hong

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/20

CPC classification number: H01L33/0079 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025

Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.

Abstract translation: 公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。 根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。

公开(公告)号：US09111840B2

公开(公告)日：2015-08-18

申请号：US14053098

申请日：2013-10-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jeong Hun Heo ,  Yeo Jin Yoon ,  Joo Won Choi ,  Joon Hee Lee ,  Chang Yeon Kim ,  Su Young Lee

IPC: H01L27/15 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.

Abstract translation: 本发明的示例性实施例公开了一种半导体器件及其制造方法。 半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，绝缘图案使半导体堆叠与氮化镓衬底绝缘 。

公开(公告)号：US20150069418A1

公开(公告)日：2015-03-12

申请号：US14386775

申请日：2013-03-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Su Jin Shin ,  Ki Bum Nam ,  Yu Dae Han ,  A Ram Cha Lee

IPC: H01L21/02 ,  H01L29/06 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/24 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0657 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。