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公开(公告)号：US09514926B2
公开(公告)日：2016-12-06
申请号：US14703773
申请日：2015-05-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Su Youn Hong , Joo Won Choi , Jeong Hun Heo , Su Jin Shin , Choong Min Lee
IPC: H01L21/02 , H01L21/306 , H01L33/00
CPC classification number: H01L21/02032 , H01L21/02002 , H01L21/306 , H01L21/30612 , H01L21/30617 , H01L33/0079
Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.
Abstract translation: 本公开的实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。
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公开(公告)号：US09048086B2
公开(公告)日：2015-06-02
申请号：US14264924
申请日：2014-04-29
Applicant: Seoul Viosys Co., Ltd.
Inventor： Su Youn Hong , Joo Won Choi , Jeong Hun Heo , Su Jin Shin , Choong Min Lee
CPC classification number: H01L21/02032 , H01L21/02002 , H01L21/306 , H01L21/30612 , H01L21/30617 , H01L33/0079
Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.
Abstract translation: 本公开的示例性实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。
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3.发明申请METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS 有权分离生长基板的方法，制造发光二极管的方法和使用方法制造的发光二极管公开(公告)号：US20150318436A1
公开(公告)日：2015-11-05
申请号：US14436068
申请日：2013-08-01
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Young Wug Kim , Su Jin Shin , Su Youn Hong
CPC classification number: H01L33/0079 , H01L33/0075 , H01L33/0095 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/46 , H01L2933/0025
Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.
Abstract translation: 公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。 根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。
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公开(公告)号：US20150115223A1
公开(公告)日：2015-04-30
申请号：US14526427
申请日：2014-10-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Woo Chul Kwak , Seung Kyu Choi , Chae Hon Kim , Jung Whan Jung , Yong Hyun Baek , Sam Seok Jang , Su Youn Hong , Mi Gyeong Jeong
IPC: H01L29/20 , H01L29/205 , H01L29/15 , H01L29/201
CPC classification number: H01L29/2003 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/0607 , H01L29/155 , H01L29/201 , H01L29/205 , H01L33/02 , H01L33/025 , H01L33/04 , H01L33/20 , H01L33/22
Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.
Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括：第一导电型半导体层，包括第一下导电型半导体层和第一上导电型半导体层; 通过所述第一上导电型半导体层的至少一部分的V凹坑; 放置在所述第一导电型半导体上并填充所述V坑的第二导电型半导体层; 以及插入在第一和第二导电类型半导体层之间的有源层，其中V坑穿过有源层。 第一上导电型半导体层具有比第一下导电型半导体层更高的缺陷密度，并且包括包含V坑的起点的V坑生成层。 半导体器件包括具有大尺寸和高密度的V型凹坑，以有效地防止由于静电放电对半导体器件的损坏。
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公开(公告)号：US20170069790A1
公开(公告)日：2017-03-09
申请号：US15255711
申请日：2016-09-02
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seung Kyu Choi , Hee Sub Lee , Soon Ho Ahn , Chae Hon Kim , Su Youn Hong
CPC classification number: H01L33/16 , H01L33/06 , H01L33/145 , H01L33/32
Abstract: A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.
Abstract translation: 发光器件包括：包括氮化镓的衬底，以及设置在衬底上的半导体层，所述半导体层包括n型氮化物半导体层，设置在n型氮化物半导体层上的有源层和p型 设置在有源层上的氮化物半导体层，其中限定在基板的晶体生长面与其m面之间的角度在3.5°至6°的范围内。
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Patent Agency Ranking
公开(公告)号：US20150380236A1
公开(公告)日：2015-12-31
申请号：US14703773
申请日：2015-05-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Su Youn Hong , Joo Won Choi , Jeong Hun Heo , Su Jin Shin , Choong Min Lee
IPC: H01L21/02 , H01L21/306
CPC classification number: H01L21/02032 , H01L21/02002 , H01L21/306 , H01L21/30612 , H01L21/30617 , H01L33/0079
Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.
Abstract translation: 本公开的实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。
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公开(公告)号：US09966501B2
公开(公告)日：2018-05-08
申请号：US15255711
申请日：2016-09-02
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seung Kyu Choi , Hee Sub Lee , Soon Ho Ahn , Chae Hon Kim , Su Youn Hong
CPC classification number: H01L33/16 , H01L33/06 , H01L33/145 , H01L33/32
Abstract: A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.
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8.发明授权Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods 有权分离生长衬底的方法，发光二极管的方法和使用方法制造的发光二极管公开(公告)号：US09450141B2
公开(公告)日：2016-09-20
申请号：US14436068
申请日：2013-08-01
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Young Wug Kim , Su Jin Shin , Su Youn Hong
CPC classification number: H01L33/0079 , H01L33/0075 , H01L33/0095 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/46 , H01L2933/0025
Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.
Abstract translation: 公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。 根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。
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公开(公告)号：US09287367B2
公开(公告)日：2016-03-15
申请号：US14526427
申请日：2014-10-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Woo Chul Kwak , Seung Kyu Choi , Chae Hon Kim , Jung Whan Jung , Yong Hyun Baek , Sam Seok Jang , Su Youn Hong , Mi Gyeong Jeong
IPC: H01L29/06 , H01L29/20 , H01L29/15 , H01L29/201 , H01L29/205 , H01L33/04 , H01L33/02 , H01L33/22
CPC classification number: H01L29/2003 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/0607 , H01L29/155 , H01L29/201 , H01L29/205 , H01L33/02 , H01L33/025 , H01L33/04 , H01L33/20 , H01L33/22
Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.
Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括：第一导电型半导体层，包括第一下导电型半导体层和第一上导电型半导体层; 通过所述第一上导电型半导体层的至少一部分的V凹坑; 放置在所述第一导电型半导体上并填充所述V坑的第二导电型半导体层; 以及插入在第一和第二导电类型半导体层之间的有源层，其中V坑穿过有源层。 第一上导电型半导体层具有比第一下导电型半导体层更高的缺陷密度，并且包括包含V坑的起点的V坑生成层。 半导体器件包括具有大尺寸和高密度的V型凹坑，以有效地防止由于静电放电对半导体器件的损坏。
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公开(公告)号：US20140322899A1
公开(公告)日：2014-10-30
申请号：US14264924
申请日：2014-04-29
Applicant: Seoul Viosys Co., Ltd.
Inventor： Su Youn Hong , Joo Won Choi , Jeong Hun Heo , Su Jin Shin , Choong Min Lee
IPC: H01L21/02
CPC classification number: H01L21/02032 , H01L21/02002 , H01L21/306 , H01L21/30612 , H01L21/30617 , H01L33/0079
Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.
Abstract translation: 本公开的示例性实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。
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