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    Substrate recycling method
    1.
    发明授权
    Substrate recycling method 有权
    基材回收方法

    公开(公告)号：US09514926B2

    公开(公告)日：2016-12-06

    申请号：US14703773

    申请日：2015-05-04

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Su Youn Hong ,  Joo Won Choi ,  Jeong Hun Heo ,  Su Jin Shin ,  Choong Min Lee

    IPC: H01L21/02 ,  H01L21/306 ,  H01L33/00

    CPC classification number: H01L21/02032 ,  H01L21/02002 ,  H01L21/306 ,  H01L21/30612 ,  H01L21/30617 ,  H01L33/0079

    Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.

    Abstract translation: 本公开的实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。

    Substrate recycling method
    2.
    发明授权
    Substrate recycling method 有权
    基材回收方法

    公开(公告)号：US09048086B2

    公开(公告)日：2015-06-02

    申请号：US14264924

    申请日：2014-04-29

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Su Youn Hong ,  Joo Won Choi ,  Jeong Hun Heo ,  Su Jin Shin ,  Choong Min Lee

    IPC: H01L21/20 ,  H01L21/02

    CPC classification number: H01L21/02032 ,  H01L21/02002 ,  H01L21/306 ,  H01L21/30612 ,  H01L21/30617 ,  H01L33/0079

    Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.

    Abstract translation: 本公开的示例性实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。

    SUBSTRATE RECYCLING METHOD
    4.
    发明申请
    SUBSTRATE RECYCLING METHOD 有权
    基板回收方法

    公开(公告)号：US20150380236A1

    公开(公告)日：2015-12-31

    申请号：US14703773

    申请日：2015-05-04

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Su Youn Hong ,  Joo Won Choi ,  Jeong Hun Heo ,  Su Jin Shin ,  Choong Min Lee

    IPC: H01L21/02 ,  H01L21/306

    CPC classification number: H01L21/02032 ,  H01L21/02002 ,  H01L21/306 ,  H01L21/30612 ,  H01L21/30617 ,  H01L33/0079

    Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.

    Abstract translation: 本公开的实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。

    METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS
    6.
    发明申请
    METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS 有权
    分离生长基板的方法，制造发光二极管的方法和使用方法制造的发光二极管

    公开(公告)号：US20150318436A1

    公开(公告)日：2015-11-05

    申请号：US14436068

    申请日：2013-08-01

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Young Wug Kim ,  Su Jin Shin ,  Su Youn Hong

    IPC: H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/20

    CPC classification number: H01L33/0079 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025

    Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.

    Abstract translation: 公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。 根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。

    Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods
    8.
    发明授权
    Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods 有权
    分离生长衬底的方法，发光二极管的方法和使用方法制造的发光二极管

    公开(公告)号：US09450141B2

    公开(公告)日：2016-09-20

    申请号：US14436068

    申请日：2013-08-01

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Young Wug Kim ,  Su Jin Shin ,  Su Youn Hong

    IPC: H01L33/00 ,  H01L33/32 ,  H01L27/15 ,  H01L21/02 ,  H01L33/20 ,  H01L33/46 ,  H01L33/12

    CPC classification number: H01L33/0079 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025

    Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.

    Abstract translation: 公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。 根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。

    SUBSTRATE RECYCLING METHOD
    10.
    发明申请
    SUBSTRATE RECYCLING METHOD 有权
    基板回收方法

    公开(公告)号：US20140322899A1

    公开(公告)日：2014-10-30

    申请号：US14264924

    申请日：2014-04-29

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Su Youn Hong ,  Joo Won Choi ,  Jeong Hun Heo ,  Su Jin Shin ,  Choong Min Lee

    IPC: H01L21/02

    CPC classification number: H01L21/02032 ,  H01L21/02002 ,  H01L21/306 ,  H01L21/30612 ,  H01L21/30617 ,  H01L33/0079

    Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.

    Abstract translation: 本公开的示例性实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。

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