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    SUBSTRATE REGENERATION METHOD AND REGENERATED SUBSTRATE
    1.
    发明申请
    SUBSTRATE REGENERATION METHOD AND REGENERATED SUBSTRATE 有权
    基板再生方法和再生基板

    公开(公告)号：US20160155628A1

    公开(公告)日：2016-06-02

    申请号：US14958793

    申请日：2015-12-03

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Suk Han ,  Hwa Mok Kim ,  Mi So Ko ,  A Ram Cha Lee ,  Daewoong Suh

    IPC: H01L21/02 ,  H01L29/20 ,  H01L29/34

    CPC classification number: H01L21/02032 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/34 ,  H01L33/0075 ,  H01L33/12

    Abstract: Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.

    Abstract translation: 公开了一种基板再生方法和再生基板。 衬底再生方法包括制备具有与外延层分离的表面的衬底。 分离面包括凸部和凹部，凸部比凹部比较平坦。 在分离的表面上生长晶体恢复层。 晶体恢复层在凸部上生长。 此外，在结晶恢复层上生长表面粗糙度改善层，从而提供连续的表面。 因此，可以提供具有平坦表面的再生基板，而不使用物理抛光或化学蚀刻技术。

    Near UV light emitting device
    7.
    发明授权
    Near UV light emitting device 有权
    近UV发光装置

    公开(公告)号：US09312447B2

    公开(公告)日：2016-04-12

    申请号：US14526110

    申请日：2014-10-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chang Suk Han ,  Hwa Mok Kim ,  Hyo Shik Choi ,  Mi So Ko ,  A Ram Cha Lee

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/04 ,  H01L33/14

    CPC classification number: H01L33/32 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14

    Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

    Abstract translation: 公开了一种近紫外发光装置。 发光器件包括n型接触层，p型接触层，设置在n型接触层和p型接触层之间的多量子阱结构的有源区，以及至少一个电子 控制层设置在n型接触层和有源区之间。 n型接触层和p型接触层中的每一个包括AlInGaN或AlGaN层，并且电子控制层由AlInGaN或AlGaN形成。 此外，电子控制层包含比相邻层更大量的Al，以阻止电子流入有源区域。 因此，电子迁移率恶化，从而提高有源区域中的电子和空穴的复合率。

    Near UV light emitting device
    8.
    发明授权
    Near UV light emitting device 有权
    近UV发光装置

    公开(公告)号：US09224913B2

    公开(公告)日：2015-12-29

    申请号：US13853361

    申请日：2013-03-29

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Suk Han ,  Hwa Mok Kim ,  Hyo Shik Choi ,  Mi So Ko ,  A Ram Cha Lee

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/04 ,  H01L33/14

    CPC classification number: H01L33/06 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

    Abstract: Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.

    Abstract translation: 本文公开了一种紫外线（UV）发光器件。 发光器件包括：包括GaN层的n型接触层; 包括GaN层的p型接触层; 以及设置在n型接触层和p型接触层之间的多量子阱结构的有源层，有源区被配置为发射波长为365nm至309nm的近紫外光。

    UV light emitting device
    9.
    发明授权
    UV light emitting device 有权

    公开(公告)号：US10177273B2

    公开(公告)日：2019-01-08

    申请号：US14811253

    申请日：2015-07-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chang Suk Han ,  Hwa Mok Kim ,  Hyo Shik Choi ,  Mi So Ko ,  A Ram Cha Lee

    IPC: H01L33/32 ,  H01L33/06 ,  H01L33/00 ,  H01L33/12 ,  H01L33/04 ,  H01L33/14

    Abstract: A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.

    Near UV light emitting device
    10.
    发明授权
    Near UV light emitting device 有权

    公开(公告)号：US10164150B2

    公开(公告)日：2018-12-25

    申请号：US15096252

    申请日：2016-04-11

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Suk Han ,  Hwa Mok Kim ,  Hyo Shik Choi ,  Mi So Ko ,  A Ram Cha Lee

    IPC: H01L33/04 ,  H01L33/14 ,  H01L33/06 ,  H01L33/32

    Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

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