公开(公告)号：US09236510B2

公开(公告)日：2016-01-12

申请号：US14137172

申请日：2013-12-20

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Vivek Saraswat

IPC: H01L21/00 ,  H01L31/0236 ,  B23K26/06 ,  B23K26/073 ,  B23K26/36 ,  B23K26/40 ,  H01L31/068 ,  H01L31/18 ,  H01L31/056 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0445 ,  H01L31/0216

CPC classification number: H01L31/02366 ,  B23K26/066 ,  B23K26/073 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/172 ,  B23K2103/50 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for making an ablated electrically insulating layer on a semiconductor substrate. A first relatively thin layer of at least an undoped glass or undoped oxide is deposited on a surface of a semiconductor substrate having n-type doping. A first relatively thin semiconductor layer having at least one substance chosen from amorphous semiconductor, nanocrystalline semiconductor, microcrystalline semiconductor, or polycrystalline semiconductor is deposited on the relatively thin layer of at least an undoped glass or undoped oxide. At least a layer of borosilicate glass or borosilicate/undoped glass stack is deposited on the relatively thin semiconductor layer. The at least borosilicate glass or borosilicate/undoped glass stack is selectively ablated with a pulsed laser, and the relatively thin semiconductor layer substantially protects the semiconductor substrate from the pulsed laser.

Abstract translation: 一种在半导体衬底上制造消融的电绝缘层的方法。 在具有n型掺杂的半导体衬底的表面上沉积至少未掺杂的玻璃或未掺杂氧化物的第一相对较薄的层。 具有至少一种选自非晶半导体，纳米晶体半导体，微晶半导体或多晶半导体的物质的第一相对较薄的半导体层沉积在至少未掺杂的玻璃或未掺杂氧化物的较薄层上。 至少一层硼硅酸盐玻璃或硼硅酸盐/未掺杂的玻璃堆叠沉积在相对薄的半导体层上。 至少硼硅酸盐玻璃或硼硅酸盐/未掺杂的玻璃堆叠被脉冲激光器选择性地烧蚀，并且相对薄的半导体层基本上保护半导体衬底免受脉冲激光器的影响。

公开(公告)号：US20140017846A1

公开(公告)日：2014-01-16

申请号：US13727393

申请日：2012-12-26

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Solene Coutant ,  Heather Deshazer ,  Pranav Anbalagan ,  Benjamin Rattle

IPC: H01L31/0236

CPC classification number: H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process.

Abstract translation: 提供了提高晶体硅太阳能电池的光捕获特性的方法。 在一个实施例中，晶体硅太阳能电池基板的背面用脉冲激光束纹理化。 然后对结晶硅太阳能电池基板的带纹理的背面进行退火，以消除激光纹理化过程中的损伤。

公开(公告)号：US20130288425A1

公开(公告)日：2013-10-31

申请号：US13852966

申请日：2013-03-28

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Mehrdad M. Moslehi ,  Pranav Anbalagan ,  Heather Deshazer ,  Solene Coutant ,  Benjamin E. Rattle ,  Karl-Josef Kramer ,  Pawan Kapur

IPC: H01L31/18

CPC classification number: H01L31/186 ,  B23K26/009 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/389 ,  B23K26/40 ,  B23K2103/172 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1892 ,  Y02E10/547

Abstract: Methods and structures for fabricating photovoltaic back contact solar cells having multi-level metallization using laser via drilling end point detection are provided.

Abstract translation: 提供了使用激光经钻孔终点检测制造具有多层金属化的光伏背接触太阳能电池的方法和结构。