公开(公告)号：US20150308962A1

公开(公告)日：2015-10-29

申请号：US14659038

申请日：2015-03-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Alfio RUSSO

IPC: G01N21/85 ,  H01L31/0216 ,  H01L31/18 ,  G01N21/31 ,  G01N21/05

CPC classification number: H01L27/1443 ,  G01M15/108 ,  G01N21/05 ,  G01N21/31 ,  G01N21/314 ,  G01N21/33 ,  G01N21/61 ,  G01N21/85 ,  G01N2021/3137 ,  G01N2021/8578 ,  G01N2201/0612 ,  H01L31/00 ,  H01L31/02162 ,  H01L31/0312 ,  H01L31/1035 ,  H01L31/1037 ,  H01L31/108 ,  H01L31/18 ,  H01L31/1812 ,  Y02E10/50

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

Abstract translation: 一种用于检测试样中包含的第一化学物质和第二化学物质的光学装置，其包括：第一光学传感器，其可以通过样品光学耦合到光源，并且对波长包括的光的辐射敏感 第一波长范围; 以及第二光学传感器，其可以通过样本光学耦合到光源，并对波长包括在与第一波长范围不同的第二波长范围内的波长敏感。

公开(公告)号：US20200028001A1

公开(公告)日：2020-01-23

申请号：US16509040

申请日：2019-07-11

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Pietro Paolo BARBARINO ,  Domenico Pierpaolo MELLO ,  Antonella SCIUTO

IPC: H01L31/0216 ,  H01L31/107 ,  H01L31/16 ,  H01L33/38

Abstract: An optical sensor includes a light-emitter device formed in a body of solid-state material with wide band gap having a surface. The light-emitter device includes a cathode region having a first conductivity type and an anode region having a second conductivity type. The anode region extends into the cathode region from the surface of the body. The anode region and the cathode region define a junction, and the cathode region has, near the junction, a peak defectiveness area accommodating vacancies in the crystalline structure due to non-bound ions or atoms of Group IV or VIII of the periodic table, which may include carbon, silicon, helium, argon, or neon. The vacancies are at a higher concentration with respect to mean values of vacancies in the anode region and in the cathode region. For example, the vacancies in the peak defectiveness area have a concentration of at least 1013 atoms/cm−3.

公开(公告)号：US20200020821A1

公开(公告)日：2020-01-16

申请号：US16508039

申请日：2019-07-10

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Valeria CINNERA MARTINO

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US20190319158A1

公开(公告)日：2019-10-17

申请号：US16386163

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Valeria CINNERA MARTINO

IPC: H01L31/14 ,  H01L27/144 ,  H01L31/024 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/18 ,  G01J1/44

Abstract: A photodetector includes a Geiger mode avalanche photodiode, which includes a body of semiconductor material, which is delimited by a front surface. The avalanche photodiode further includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The photodetector further includes: a dielectric region, arranged on the front surface; a quenching resistor, which extends on the dielectric region, is electrically connected to the anode region, and is laterally spaced apart with respect to the anode region; and an optical-isolation region, which extends through the dielectric region and laterally delimits a portion of the dielectric region, the anode region extending underneath the portion of the dielectric region, the optical-isolation region being moreover interposed between the portion of the dielectric region and the quenching resistor.

公开(公告)号：US20190319155A1

公开(公告)日：2019-10-17

申请号：US16386184

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Giovanni CONDORELLI

IPC: H01L31/107 ,  H01L27/146 ,  G01N21/75 ,  H01L31/18

Abstract: A device for detecting a chemical species, including a Geiger-mode avalanche diode, which includes a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The detection device further includes: a sensitive structure arranged on the anode region and including at least one sensitive region, which has an electrical permittivity that depends upon the concentration of the chemical species; and a resistive region, arranged on the sensitive structure and electrically coupled to the anode region.

公开(公告)号：US20180138327A1

公开(公告)日：2018-05-17

申请号：US15868929

申请日：2018-01-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Piero FALLICA ,  Salvatore LOMBARDO

IPC: H01L31/0216 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44 ,  H01L27/144

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20200158710A1

公开(公告)日：2020-05-21

申请号：US16685618

申请日：2019-11-15

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Antonella SCIUTO

IPC: G01N33/20 ,  G01N27/414 ,  H01L29/872

Abstract: A system for detecting the concentration of metal particles of at least one first material, which includes a detector with: a semiconductor body including a cathode region, delimited by a front surface; and an anode structure made of metal material, which extends over a part of the cathode region, leaving part of the front surface exposed. The anode structure and the part of the cathode region form a first contact of a Schottky type. The exposed part of the front surface can access the metal particles.

公开(公告)号：US20190319159A1

公开(公告)日：2019-10-17

申请号：US16386170

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Giovanni CONDORELLI ,  Lucio RENNA

IPC: H01L31/14 ,  H01L27/144 ,  H01L31/024 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/18 ,  G01J1/44

Abstract: A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

公开(公告)号：US20180333060A1

公开(公告)日：2018-11-22

申请号：US15976658

申请日：2018-05-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Piero FALLICA ,  Sebania LIBERTINO

IPC: A61B5/021 ,  A61B5/024 ,  A61B5/00 ,  G02F1/21

CPC classification number: A61B5/02125 ,  A61B5/021 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/742 ,  A61B2562/0238 ,  G02F1/21 ,  G02F2001/213 ,  G02F2203/055 ,  G02F2203/11

Abstract: In various embodiments, the present disclosure provides devices and systems for detecting the blood pressure of a user. In one embodiment, an optoelectronic device includes an array of avalanche photodiodes operating in Geiger mode. A tunable optical filter is optically coupled to the array and receives a light beam reflected from a vascularized tissue of the user, in response to the vascularized tissue being illuminated by an optical source.

公开(公告)号：US20180202859A1

公开(公告)日：2018-07-19

申请号：US15920200

申请日：2018-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Antonella SCIUTO

IPC: G01J1/42 ,  G01J5/00 ,  F23N5/08 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0216 ,  H01L31/103 ,  H01L31/0312 ,  H01L31/107 ,  H01L31/0224 ,  H01L31/09 ,  H01L31/0352

CPC classification number: G01J1/429 ,  F23N5/082 ,  G01J5/0014 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14669 ,  H01L27/1467 ,  H01L31/02027 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/1035 ,  H01L31/107 ,  H01L31/1812

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.