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    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE
    13.
    发明申请
    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE 有权

    公开(公告)号：US20220199720A1

    公开(公告)日：2022-06-23

    申请号：US17353640

    申请日：2021-06-21

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jaybum Kim ,  Myeongho Kim ,  Yeonhong Kim ,  Kyoungseok Son ,  Seungjun Lee ,  Seunghun Lee ,  Junhyung Lim

    IPC: H01L27/32 ,  H01L51/56

    Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

    Display device and method of manufacturing the same
    15.
    发明授权
    Display device and method of manufacturing the same 有权

    公开(公告)号：US10854837B2

    公开(公告)日：2020-12-01

    申请号：US16911525

    申请日：2020-06-25

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

    IPC: H01L51/52 ,  G09G3/32 ,  H01L51/00 ,  H01L27/11 ,  H01L27/32 ,  G09G3/3233

    Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

    Semiconductor device with dummy hole
    16.
    发明授权
    Semiconductor device with dummy hole 有权

    公开(公告)号：US10541336B2

    公开(公告)日：2020-01-21

    申请号：US15724600

    申请日：2017-10-04

    Applicant: Samsung Display Co., Ltd.

    Inventor： Junhyung Lim ,  Jaybum Kim ,  Kyoungseok Son ,  Jihun Lim

    IPC: H01L29/786 ,  H01L21/02 ,  H01L21/322 ,  H01L51/52 ,  H01L29/423 ,  H01L27/32 ,  H01L29/04 ,  H01L27/12

    Abstract: A semiconductor device may include a base substrate, a first thin-film transistor (“TFT”) provided on the base substrate, a second TFT provided on the base substrate, and a plurality of insulating layers provided on the base substrate to define at least one dummy hole that is not overlapped with the first and second TFTs. The first TFT may include a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor material, and the second TFT may include a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor material. A shortest distance between the at least one dummy hole and the second semiconductor pattern may be equal to or shorter than 5 micrometers (μm), in a plan view.

    Organic light emitting display device
    18.
    发明授权
    Organic light emitting display device 有权

    公开(公告)号：US12022710B2

    公开(公告)日：2024-06-25

    申请号：US17414355

    申请日：2019-03-06

    Applicant: Samsung Display Co., Ltd.

    Inventor： Seunghun Lee ,  Myounghwa Kim ,  Jaybum Kim ,  Kyoung-seok Son ,  Seungjun Lee ,  Jun-hyung Lim

    IPC: H10K59/131 ,  H10K71/00 ,  H10K50/844 ,  H10K59/12 ,  H10K77/10 ,  H10K102/00

    CPC classification number: H10K59/1315 ,  H10K71/00 ,  H10K50/844 ,  H10K59/1201 ,  H10K77/111 ,  H10K2102/311

    Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the protective insulating layer, the first drain electrode constituting a driving transistor together with the first active layer, the first gate electrode, and the first source electrode, a switching transistor disposed in the second region between the substrate and the protective insulating layer, a lower electrode disposed on the switching transistor and the driving transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer.

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