公开(公告)号：US11723244B2

公开(公告)日：2023-08-08

申请号：US17152249

申请日：2021-01-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyelim Choi ,  Joonseok Park ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim

IPC: H10K59/131 ,  H10K59/122 ,  H10K59/12

CPC classification number: H10K59/131 ,  H10K59/122 ,  H10K59/1201

Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.

公开(公告)号：US20220037456A1

公开(公告)日：2022-02-03

申请号：US17368721

申请日：2021-07-06

Applicant: Samsung Display Co., Ltd.

Inventor： Geunchul Park ,  Joonseok Park ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a substrate, a first pixel, a second pixel, a first wire set, and a second wire set. The first pixel and the second pixel overlap the substrate and neighbor each other in a first direction. The first wire set extends in a second direction, includes a first conduction line and a first transmission line, and may transfer a first data signal. The first conduction line is positioned between the substrate and the first transmission line and is connected through the first transmission line to the first pixel. The second wire set extends in the second direction, includes a second conduction line and a second transmission line, and may transfer a second data signal. The second conduction line is positioned between the substrate and the second transmission line and electrically connects the second transmission line to the second pixel.

公开(公告)号：US11049929B2

公开(公告)日：2021-06-29

申请号：US16804152

申请日：2020-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US10593808B2

公开(公告)日：2020-03-17

申请号：US16108454

申请日：2018-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonseok Park ,  Jihun Lim ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US11950455B2

公开(公告)日：2024-04-02

申请号：US17287936

申请日：2019-02-20

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonkeon Moon ,  Joonseok Park ,  Kwang-suk Kim ,  Myounghwa Kim ,  Taesang Kim ,  Geunchul Park ,  Kyungjin Jeon

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131

CPC classification number: H10K59/1213 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/131

Abstract: A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.

公开(公告)号：US11877479B2

公开(公告)日：2024-01-16

申请号：US18090401

申请日：2022-12-28

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L27/12 ,  H10K59/122 ,  H10K50/11 ,  H10K50/844 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H10K77/10 ,  H10K59/12 ,  H10K102/00

CPC classification number: H10K59/122 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1288 ,  H10K50/11 ,  H10K50/844 ,  H10K59/123 ,  H10K59/124 ,  H10K59/1213 ,  H10K59/131 ,  H10K71/00 ,  H10K77/111 ,  H10K59/1201 ,  H10K2102/311

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US11678547B2

公开(公告)日：2023-06-13

申请号：US17328026

申请日：2021-05-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

CPC classification number: H01L27/3279 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L2227/323

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US11552142B2

公开(公告)日：2023-01-10

申请号：US17116943

申请日：2020-12-09

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00 ,  H01L27/12 ,  H01L51/50

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US11257885B2

公开(公告)日：2022-02-22

申请号：US16581041

申请日：2019-09-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum Kim ,  Myounghwa Kim ,  Kyoung Seok Son ,  Seungjun Lee ,  Seunghun Lee ,  Jun Hyung Lim

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display device includes a substrate, a first semiconductor element, a second semiconductor element, a protection electrode, and a light emitting structure. The protection electrode is disposed between the second active layer and the second source electrode and the second drain electrode, and has an opening that exposes a portion of the second active layer and the light emitting structure is disposed on the first and second semiconductor elements.

公开(公告)号：US09515154B2

公开(公告)日：2016-12-06

申请号：US14597563

申请日：2015-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan Lee ,  Yoonho Khang ,  Myounghwa Kim ,  Joonhwa Bae ,  Myounggeun Cha

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Abstract translation: 薄膜晶体管包括在基板上的多晶硅层，其包括第二和第三区域之间的第一区域。 在基板上形成多晶硅层，在第一和第三区域的多晶硅层上形成源电极和漏电极。 源电极和漏电极中的每一个包括与多晶硅层相邻的金属硅化物层。