公开(公告)号：US20130168563A1

公开(公告)日：2013-07-04

申请号：US13728013

申请日：2012-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-il KIM ,  Jae-chul PARK ,  Sang-wook KIM ,  Chang-jung KIM

IPC: G01T1/16 ,  H01L31/18

CPC classification number: G01T1/16 ,  G01T1/243 ,  H01L27/14676 ,  H01L31/035281 ,  H01L31/119 ,  H01L31/18 ,  Y02E10/50

Abstract: A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.

Abstract translation: 多能量辐射检测器可以包括阵列基板，其包括多个单元电路，和/或阵列基板上的光电转换层。 光电转换层可以包括具有彼此不同的厚度的多个区域。 制造多能量辐射检测器的方法可以包括通过在衬底上形成和图案化第一金属层来形成栅极和第一电极; 在栅极和第一电极上形成绝缘层; 通过在所述绝缘层上形成和图案化半导体层来形成沟道层; 通过在沟道层上形成和构图第二金属层来形成源极，漏极和第二电极; 形成钝化层以覆盖源极，漏极和第二电极; 在钝化层上形成第一光电转换层; 和/或在第一光电转换层的一部分上形成第二光电转换层。

公开(公告)号：US20180201501A1

公开(公告)日：2018-07-19

申请号：US15922972

申请日：2018-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-sik SHIM ,  Seog-woo HONG ,  Seok-whan CHUNG ,  Chang-jung KIM

IPC: B81B7/00 ,  B06B1/02 ,  B81C1/00

CPC classification number: B81B7/007 ,  B06B1/0292 ,  B81C1/00301

Abstract: A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit provided on the device substrate, the supporting unit defining a plurality of cavities; a membrane provided on the supporting unit to cover the plurality of cavities; a top electrode electrically connected to a second portion in the second trench through a via hole penetrating through the membrane and the supporting unit; and a through silicon via (TSV) substrate provided on a bottom surface of the device substrate, the TSV substrate including a first via metal connected to the plurality of first portions corresponding to the element and a second via metal connected to the second portion.

公开(公告)号：US20150156571A1

公开(公告)日：2015-06-04

申请号：US14280725

申请日：2014-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-sik SHIM ,  Seog-woo HONG ,  Seok-whan CHUNG ,  Chang-jung KIM

IPC: H04R1/00 ,  H01L21/02 ,  H01L23/48 ,  H01L21/768 ,  H01L21/304

CPC classification number: H04R1/00 ,  B06B1/0292 ,  H01L21/0237 ,  H01L21/3043 ,  H01L21/768 ,  H01L23/481 ,  H01L2924/0002 ,  H04R19/005 ,  H01L2924/00

Abstract: A capacitive micromachined ultrasonic transducer includes a device substrate including a first trench confining a plurality of first parts corresponding to a plurality of elements and a second trench confining a second part separated from the plurality of first parts, a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements, a membrane provided on the supporting unit to cover the plurality of cavities, an upper electrode provided on the membrane and electrically connected to the second part in the second trench through a via hole passing through the membrane and the supporting unit, and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, and including a plurality of first via metals connected to the plurality of first parts and a second via metal connected to the second part.

Abstract translation: 一种电容微加工超声波换能器包括：器件基板，包括限定对应于多个元件的多个第一部分的第一沟槽和限制与多个第一部分分离的第二部分的第二沟槽;设置在器件基板上的支撑单元， 限制与所述多个元件中的每一个相对应的多个空腔;设置在所述支撑单元上以覆盖所述多个空腔的膜;设置在所述膜上并通过通孔电连接到所述第二沟槽中的所述第二部分的上电极 穿过膜和支撑单元，以及设置在器件衬底的下表面上的穿硅通孔（TSV）衬底，并且包括连接到多个第一部分的多个第一通孔金属和连接到多个第一通孔的第二通孔金属 到第二部分。

公开(公告)号：US20150141795A1

公开(公告)日：2015-05-21

申请号：US14338507

申请日：2014-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-seok KIM ,  Sung-chan KANG ,  Hyung-joo KIM ,  Hyung-jae SHIN ,  Yong-seop YOON ,  Byung-gil JEONG ,  Seok-whan CHUNG ,  Chang-jung KIM

IPC: A61B5/00

CPC classification number: A61B5/0095 ,  A61B5/0091 ,  A61B5/708 ,  A61B8/0825 ,  A61B8/406 ,  A61B8/42

Abstract: A breast scanning apparatus which uses photoacoustic ultrasonic waves is provided. The breast scanning apparatus includes a body which includes a first hole and a second hole which are horizontally parallel to each other; a first compression plate and a second compression plate, at least one of which is movable in a vertical direction with respect to the body; a first sliding plate and a second sliding plate, which are respectively installed on surfaces of the first compression plate and the second compression plate and are facing each other and are movable in a first direction; a first ultrasonic transducer array in the first compression plate and facing the first sliding plate; and a first laser head in the first compression plate, which is movable in a second direction which is perpendicular to the first direction.

Abstract translation: 提供了使用光声超声波的乳房扫描装置。 乳房扫描装置包括：主体，其包括彼此水平平行的第一孔和第二孔; 第一压缩板和第二压缩板，其中至少一个可相对于主体在垂直方向上移动; 第一滑动板和第二滑动板，其分别安装在第一压缩板和第二压缩板的表面上并且彼此面对并且可沿第一方向移动; 第一超声波换能器阵列在第一压缩板中并面向第一滑板; 以及第一压缩板中的第一激光头，其可沿与第一方向垂直的第二方向移动。

公开(公告)号：US20150131408A1

公开(公告)日：2015-05-14

申请号：US14296567

申请日：2014-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Korea Advanced Institute of Science and Technology

Inventor： Sung-chan KANG ,  Jong-seok KIM ,  Chang-jung KIM ,  Seung-bum YANG ,  Young-jae OH ,  Yong-seop YOON ,  Ki-hun JEONG

IPC: G10K15/04 ,  C23F1/00

CPC classification number: G10K15/046 ,  B06B1/00

Abstract: Provided are a laser-induced ultrasound generator and a method of manufacturing the laser-induced ultrasound generator. The laser-induced ultrasound generator includes: a substrate including a plurality of nanostructures provided on a first surface of the substrate; and a thermoelastic layer provided on the first surface of the substrate, the thermoelastic layer being configured to generate an ultrasound by absorbing a laser beam incident onto a second surface of the substrate, the second surface facing the first surface. The nanostructures may be cylinder-shaped nano-pillars.

Abstract translation: 提供了激光诱导超声发生器和制造激光诱导超声发生器的方法。 所述激光诱导型超声波发生器包括：基板，其包括设置在所述基板的第一表面上的多个纳米结构体; 以及设置在所述基板的第一表面上的热弹性层，所述热弹性层被配置为通过吸收入射到所述基板的第二表面上的激光束来产生超声波，所述第二表面面向所述第一表面。 纳米结构可以是圆柱形的纳米柱。

公开(公告)号：US20140117202A1

公开(公告)日：2014-05-01

申请号：US13894526

申请日：2013-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-kun YOON ,  Young KIM ,  Chae-hun LEE ,  Chang-jung KIM ,  Jae-chul PARK

IPC: H03K21/10 ,  G01J1/44

CPC classification number: H03K21/10 ,  G01J1/44 ,  G01T1/247

Abstract: A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.

Abstract translation: 驱动器电路输出基于一个或多个能量级别的光子对列线进行分类和计数的结果。 驱动器电路包括用于从计数器接收结果的多路复用器，用于从多路复用器接收信号的驱动逆变器和电源，以及连接在电源和驱动逆变器的输入端之间的开关。

公开(公告)号：US20140092668A1

公开(公告)日：2014-04-03

申请号：US13867411

申请日：2013-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-min KIM ,  Young-bae KIM ,  Chang-jung KIM ,  Seung-ryul LEE ,  Man CHANG ,  Sung-ho KIM ,  Eun-ju CHO

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/55 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233

Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.

Abstract translation: 电阻式开关器件包括在第一电极和第二电极之间的第一材料层。 第一材料层具有平行于第一区域的第一区域和第二区域。 第一区域对应于形成在第一材料层中的导电路径，并且被配置为响应于大于或等于第一电压的施加电压从低电阻状态切换到高电阻状态。 第二区域被配置为当施加的电压大于或等于第二电压时，切换到低于高电阻状态下的第一区域的电阻值的第一电阻值。 当第二区域具有第一电阻值时，第一区域保持恒定或基本恒定。

公开(公告)号：US20130121060A1

公开(公告)日：2013-05-16

申请号：US13672113

申请日：2012-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-bum LEE ,  Young-bae KIM ,  Kyung-min KIM ,  Chang-jung KIM ,  Dong-soo LEE ,  Myoung-jae LEE ,  Seung-ryul LEE ,  Man CHANG

IPC: H01L45/00 ,  G11C11/56 ,  H01L21/62 ,  H01L27/24

CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

Abstract: Non-volatile memory elements, memory devices including the same, and methods for operating and manufacturing the same may include a memory layer between a first electrode and a second electrode spaced apart from the first electrode. The memory layer may include a first material layer and a second material layer, and may have a resistance change characteristic due to movement of ionic species between the first material layer and the second material layer. At least the first material layer of the first and second material layers may be doped with a metal.

Abstract translation: 非易失性存储器元件，包括其的存储器件及其操作和制造方法可以包括在与第一电极间隔开的第一电极和第二电极之间的存储层。 存储层可以包括第一材料层和第二材料层，并且可以由于第一材料层和第二材料层之间的离子物质的移动而具有电阻变化特性。 至少第一和第二材料层的第一材料层可以掺杂金属。

公开(公告)号：US20130062602A1

公开(公告)日：2013-03-14

申请号：US13671081

申请日：2012-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-hun JEON ,  I-hun SONG ,  Chang-jung KIM ,  Sung-ho PARK

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/22

CPC classification number: H01L29/7869

Abstract: Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

Abstract translation: 晶体管及其制造方法。 晶体管可以是具有自对准顶栅结构的氧化物薄膜晶体管（TFT）。 晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。 栅绝缘层可以覆盖源区和漏区的至少一部分。