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公开(公告)号:US20180047880A1
公开(公告)日:2018-02-15
申请号:US15486982
申请日:2017-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wan Tae LIM , Sung Hyun SIM , Hanul YOO , YONG IL KIM , Hye Seok NOH , Ji Hye YEON
CPC classification number: H01L33/507 , H01L27/156 , H01L33/504 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号:US20170250318A1
公开(公告)日:2017-08-31
申请号:US15337215
申请日:2016-10-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Nam Goo CHA , Sung Hyun SIM , Wan tae LIM , Hye Seok NOH , Hanul YOO
CPC classification number: H01L33/505 , H01L27/153 , H01L33/504 , H01L33/60 , H01L2933/0033 , H01L2933/0041
Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.
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公开(公告)号:US20240266474A1
公开(公告)日:2024-08-08
申请号:US18430747
申请日:2024-02-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taehun KIM , Gyeongseon PARK , Hanul YOO , Suyeol LEE , Taesung JANG , Dooho JEONG
CPC classification number: H01L33/405 , H01L33/32
Abstract: A semiconductor light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer arranged on the first conductivity type semiconductor layer, an active layer, an electrode layer formed on a top surface of the second conductivity type semiconductor layer, a reflective layer formed on a part of a top surface of the electrode layer, a bonding pad formed on a top surface of the reflective layer, an insulating layer formed on another part of the top surface of the electrode layer, and an insulating spacer conformally formed along a surface of the substrate. The reflective layer includes a material that is not etched by an aqueous solution including one of tetramethyl ammonium hydroxide (TMAH), KOH, NaOH, and NH4OH and the bonding pad has a shell shape including a part of which the width gradually decreases as the part distances from the reflective layer.
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公开(公告)号:US20190189853A1
公开(公告)日:2019-06-20
申请号:US16011903
申请日:2018-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hanul YOO , Sung Hyun SIM , Ji Hye YEON , Yong Il KIM , Dong Gun LEE
CPC classification number: H01L33/385 , H01L33/40 , H01L33/46 , H01L33/504 , H01L2933/0016 , H01L2933/005
Abstract: A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion.
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公开(公告)号:US20180211993A1
公开(公告)日:2018-07-26
申请号:US15933967
申请日:2018-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ji Hye YEON , Sung Hyun SIM , Wan Tae LIM , Yong Il KIM , Hanul YOO
Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
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公开(公告)号:US20170288093A1
公开(公告)日:2017-10-05
申请号:US15389808
申请日:2016-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Nam Goo CHA , Yong Il KIM , Young Soo PARK , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L33/08 , G09G3/2003 , G09G3/32 , H01L25/0756 , H01L33/382 , H01L33/46 , H01L33/504 , H01L33/58 , H01L33/62 , H01L2224/16145
Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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