-
公开(公告)号：US20220246803A1
公开(公告)日：2022-08-04
申请号：US17720923
申请日：2022-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Jo TAK , Joo Sung KIM , Jong Uk SEO , Dong Gun LEE , Yong Il KIM
IPC: H01L33/38 , H01L33/62 , H01L25/075 , H01L33/52
Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.
-
公开(公告)号：US20160300978A1
公开(公告)日：2016-10-13
申请号：US15190406
申请日：2016-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Sub KIM , Yeon Woo SEO , Dong Gun LEE , Byung Kyu CHUNG , Dae Myung CHUN , Soo Jeong CHOI
CPC classification number: H01L33/007 , B82Y20/00 , F21K9/232 , F21Y2115/10 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
Abstract translation: 纳米结构半导体发光器件包括：由第一导电型氮化物半导体材料形成的基极层; 以及设置在所述基底层上以彼此间隔开的多个发光纳米结构，其中所述多个发光纳米结构中的每一个包括：由第一导电型氮化物半导体材料形成的纳米孔，设置在所述基底层上的有源层 包括纳米孔的表面，并且包括量子阱，其被划分为在其厚度方向上具有不同铟（In）组成比的第一和第二区域; 以及设置在所述有源层上的第二导电型半导体层，并且所述第一区域中的In组成比高于所述第二区域中的In组成比。
-
公开(公告)号：US20160064608A1
公开(公告)日：2016-03-03
申请号：US14838322
申请日：2015-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byung Kyu CHUNG , Jung Sub KIM , Soo Jeong CHOI , Yeon Woo SEO , Dong Gun LEE
CPC classification number: H01L33/24 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/18 , H01L33/32 , H01L2224/16245 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.
Abstract translation: 提供一种纳米结构半导体发光器件，包括：由第一导电型氮化物半导体形成的基极层; 以及多个发光纳米结构，其设置成在所述基底层上彼此间隔开，其中所述多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔; 应力控制层，设置在所述纳米孔的表面上，并且包括含有铟的氮化物半导体; 设置在应力控制层上的有源层; 设置在有源层上的第二导电型氮化物半导体层; 以及缺陷阻挡层，其设置在所述应力控制层的至少一部分上，并且包括具有低于所述应力控制层的晶格常数的晶格常数的氮化物半导体层。
-
公开(公告)号：US20190189876A1
公开(公告)日：2019-06-20
申请号：US15995546
申请日：2018-06-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong II Kim , Han Kyu Seong , Ji Hye Yeon , Jin Sub Lee , Young Jin Choi
IPC: H01L33/62 , H01L33/44 , H01L25/075 , H01L33/50 , H01L33/60
Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.
-
公开(公告)号：US20180182931A1
公开(公告)日：2018-06-28
申请号：US15684144
申请日：2017-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Gun LEE , Yong Il KIM , Young Soo PARK , Jin Sub LEE , Wan Tae LIM
IPC: H01L33/50 , H01L33/46 , H01L25/075
Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.
-
Patent Agency Ranking
公开(公告)号：US20200303593A1
公开(公告)日：2020-09-24
申请号：US16571741
申请日：2019-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Jo TAK , Joo Sung KIM , Jong Uk SEO , Dong Gun LEE , Yong Il KIM
IPC: H01L33/38 , H01L33/52 , H01L33/62 , H01L25/075
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer covering a portion of the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor layer covering a portion of the active layer, and sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction.
-
公开(公告)号：US20190189844A1
公开(公告)日：2019-06-20
申请号：US16011783
申请日：2018-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong Il KIM , Jin Sub LEE
CPC classification number: H01L33/105 , H01L33/06 , H01L33/305 , H01L33/42
Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.
-
公开(公告)号：US20190189595A1
公开(公告)日：2019-06-20
申请号：US16008276
申请日：2018-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong Il KIM , Hye Seok NOH , Han Kyu SEONG , Sung Hyun SIM , Ha Nul YOO
CPC classification number: H01L25/0753 , H01L27/1214 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/504 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/60 , H01L33/62 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.
-
公开(公告)号：US20190189853A1
公开(公告)日：2019-06-20
申请号：US16011903
申请日：2018-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hanul YOO , Sung Hyun SIM , Ji Hye YEON , Yong Il KIM , Dong Gun LEE
CPC classification number: H01L33/385 , H01L33/40 , H01L33/46 , H01L33/504 , H01L2933/0016 , H01L2933/005
Abstract: A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion.
-
公开(公告)号：US20190181316A1
公开(公告)日：2019-06-13
申请号：US16020071
申请日：2018-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hye Seok NOH , Young Jin CHOI , Yong Il KIM , Han Kyu SEONG , Dong Gun LEE , Jin Sub LEE
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/156 , H01L33/0095 , H01L33/26 , H01L33/40 , H01L33/504 , H01L33/507 , H01L33/56 , H01L2933/005 , H04N5/2256
Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.015 seconds)
