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11.发明授权公开(公告)号：US10790122B2
公开(公告)日：2020-09-29
申请号：US15907328
申请日：2018-02-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung-Pyo Hong , Jong-Woo Sun , Jung-Mo Sung
IPC: H01J37/32 , H01L21/67 , H01L21/683
Abstract: A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.
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公开(公告)号：US11501987B2
公开(公告)日：2022-11-15
申请号：US17200032
申请日：2021-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang-nam Kim , Byeong-Hee Kim , Jeongryul Kim , Hae-Joong Park , Jong-Woo Sun , Sang-Rok Oh , Sung-Wook Jung , Nam-Young Cho , Jung-Pyo Hong
IPC: H01L21/67 , H01L21/677 , H01L21/673
Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.
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公开(公告)号：US20210202283A1
公开(公告)日：2021-07-01
申请号：US17200032
申请日：2021-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang-nam Kim , Byeong-Hee Kim , Jeongryul Kim , Hae-Joong Park , Jong-Woo Sun , Sang-Rok Oh , Sung-Wook Jung , Nam-Young Cho , Jung-Pyo Hong
IPC: H01L21/67 , H01L21/677 , H01L21/673
Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.
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公开(公告)号：US11037806B2
公开(公告)日：2021-06-15
申请号：US16509815
申请日：2019-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung-Yoon Song , Chan-Hoon Park , Jong-Woo Sun , Jung-Mo Sung , Je-Woo Han , Jin-Young Park
IPC: H01L21/67 , H01J37/32 , H01L21/762 , H01L21/308 , H01L21/3065
Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.
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Patent Agency Ranking
公开(公告)号：US10753800B2
公开(公告)日：2020-08-25
申请号：US16238644
申请日：2019-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong-Il Mun , Hyung-Joo Lee , Jong-Woo Sun , Ja-Myung Gu , Jae-Woong Hwang , Jong-Hwan An
Abstract: A calibrator of an OES may include a cover, a reference light source and a controller. The cover may be detachably combined with a ceiling of a plasma chamber of a plasma processing apparatus. The reference light source may be installed at the cover to irradiate a reference light to the OES through an inner space of the plasma chamber. The controller may compare a spectrum of the reference light inputted into the OES with a spectrum of an actual light inputted into the OES during a plasma process in the plasma chamber to calibrate the OES. Thus, the OES may be calibrated without disassembling of the OES from the plasma chamber to decrease a time for calibrating the OES.
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公开(公告)号：US20200152427A1
公开(公告)日：2020-05-14
申请号：US16407508
申请日：2019-05-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun-Woo Lee , Kyo-Hyeok Kim , Hyo-Sung Kim , Jong-Woo Sun , Seung-Bo Shim , Kyung-Hoon Lee , Jae-Hyun Lee , Ji-Soo Im , Min-Young Hur
Abstract: A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.
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公开(公告)号：US20200020555A1
公开(公告)日：2020-01-16
申请号：US16245339
申请日：2019-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang-nam Kim , Byeong-Hee Kim , Jeongryul Kim , Hae-Joong Park , Jong-Woo Sun , Sang-Rok Oh , Sung-Wook Jung , Nam-Young Cho , Jung-Pyo Hong
IPC: H01L21/67 , H01L21/673 , H01L21/677
Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.
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公开(公告)号：US10062550B2
公开(公告)日：2018-08-28
申请号：US15142629
申请日：2016-04-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-Pyo Hong , Kwang-Nam Kim , Sang-Dong Kwon , Jong-Woo Sun , Sang-Rok Oh , Yong-Moon Jang
CPC classification number: H01J37/32715 , H01J37/32009 , H01J37/321 , H01J37/32119 , H01L21/67248
Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.
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公开(公告)号：US20150359079A1
公开(公告)日：2015-12-10
申请号：US14598313
申请日：2015-01-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-Woo Sun
IPC: H05H1/00
CPC classification number: H01J37/321 , H01J37/32119 , H01J37/3244 , H01J37/32449
Abstract: An etching apparatus may include a chuck, an antenna and a dielectric window. A substrate may be placed on an upper surface of the chuck. The antenna may be arranged over the chuck to form an inductive electromagnetic field between the antenna and the chuck. The dielectric window may be arranged between the antenna and the chuck to transmit the inductive electromagnetic field to the substrate. The dielectric window may have at least two receiving spaces into which an etching gas may be introduced, and a plurality of injecting holes connected to the receiving spaces to inject the etching gas toward the substrate. Thus, the flux or flow rate of the etching gas supplied to the substrate may be selectively controlled.
Abstract translation: 蚀刻装置可以包括卡盘，天线和电介质窗。 衬底可以放置在卡盘的上表面上。 天线可以布置在卡盘上方，以在天线和卡盘之间形成感应电磁场。 电介质窗口可以布置在天线和卡盘之间，以将感应电磁场传输到基板。 电介质窗口可以具有至少两个可以引入蚀刻气体的接收空间，以及连接到接收空间的多个注入孔，以将蚀刻气体朝向衬底注入。 因此，可以选择性地控制供给到基板的蚀刻气体的通量或流量。
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