公开(公告)号：US11908858B2

公开(公告)日：2024-02-20

申请号：US16937912

申请日：2020-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Gi Gwan Park ,  Jung Hun Choi ,  Koung Min Ryu ,  Sun Jung Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423 ,  H01L27/092 ,  H01L29/739

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5283 ,  H01L29/42364 ,  H01L29/42372 ,  H01L27/0924 ,  H01L29/7391

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US11201659B2

公开(公告)日：2021-12-14

申请号：US17111203

申请日：2020-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Min Chull Paik ,  Hyoungjoo Lee ,  Hyun Hoon Ha ,  Won Hyung Heo

IPC: H04B7/08 ,  H04L5/00 ,  H04B7/06

Abstract: An electronic device includes a communication circuit, a plurality of antennas that are fed with power from the communication circuit, and a processor that controls the communication circuit. The processor is configured to receive a first signal for indicating initiation of configuration for carrier aggregation. The processor is also configured to change the configuration of at least one of the antennas or the communication circuit to perform the carrier aggregation if a second signal for indicating operation initiation of the carrier aggregation is received from a base station.

公开(公告)号：US20200287613A1

公开(公告)日：2020-09-10

申请号：US16882645

申请日：2020-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Min Chull Paik ,  Hyoungjoo Lee ,  Hyun Hoon Ha ,  Won Hyung Heo

IPC: H04B7/08 ,  H04L5/00

Abstract: An electronic device includes a communication circuit, a plurality of antennas that are fed with power from the communication circuit, and a processor that controls the communication circuit. The processor is configured to receive a first signal for indicating initiation of configuration for carrier aggregation. The processor is also configured to change the configuration of at least one of the antennas or the communication circuit to perform the carrier aggregation if a second signal for indicating operation initiation of the carrier aggregation is received from a base station.

公开(公告)号：US10666344B2

公开(公告)日：2020-05-26

申请号：US15699575

申请日：2017-09-08

Applicant: Samsung Electronics Co., Ltd

Inventor： Sung Soo Kim ,  Min Chull Paik ,  Hyoungjoo Lee ,  Hyun Hoon Ha ,  Won Hyung Heo

IPC: H04B7/08 ,  H04L5/00 ,  H04B7/06

Abstract: An electronic device includes a communication circuit, a plurality of antennas that are fed with power from the communication circuit, and a processor that controls the communication circuit. The processor is configured to receive a first signal for indicating initiation of configuration for carrier aggregation. The processor is also configured to change the configuration of at least one of the antennas or the communication circuit to perform the carrier aggregation if a second signal for indicating operation initiation of the carrier aggregation is received from a base station.

公开(公告)号：US20180254338A1

公开(公告)日：2018-09-06

申请号：US15697678

申请日：2017-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/785 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/41791 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2029/7858

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US11728409B2

公开(公告)日：2023-08-15

申请号：US17112357

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Hye Lee ,  Sung Soo Kim ,  Ik Soo Kim ,  Woong Sik Nam ,  Dong Hyun Roh

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  B82Y10/00

CPC classification number: H01L29/6656 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66545 ,  H01L29/66553 ,  B82Y10/00

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.

公开(公告)号：US20210091846A1

公开(公告)日：2021-03-25

申请号：US17111203

申请日：2020-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Min Chull Paik ,  Hyoungjoo Lee ,  Hyun Hoon Ha ,  Won Hyung Heo

IPC: H04B7/08 ,  H04L5/00

Abstract: An electronic device includes a communication circuit, a plurality of antennas that are fed with power from the communication circuit, and a processor that controls the communication circuit. The processor is configured to receive a first signal for indicating initiation of configuration for carrier aggregation. The processor is also configured to change the configuration of at least one of the antennas or the communication circuit to perform the carrier aggregation if a second signal for indicating operation initiation of the carrier aggregation is received from a base station.

公开(公告)号：US10903882B2

公开(公告)日：2021-01-26

申请号：US16233628

申请日：2018-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sung Jeon ,  Min Ki Ahn ,  Wook Bong Lee ,  Sung Soo Kim ,  Joon Suk Kim

IPC: H04B7/0456 ,  H04B7/06 ,  H04L5/00 ,  H04L1/00 ,  H04B7/0417

Abstract: A method for wireless communications includes: receiving a sounding packet from an access point; determining a rank of a channel matrix corresponding to a communications channel; and when the rank of the channel matrix is a full rank: selecting at least one of a plurality of pieces of codebook information previously stored in a memory, as beamforming information, transmitting the beamforming information to the access point, and applying channel smoothing to a communications channel provided by the access point.

公开(公告)号：US20190280116A1

公开(公告)日：2019-09-12

申请号：US16426819

申请日：2019-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US08921083B2

公开(公告)日：2014-12-30

申请号：US13946179

申请日：2013-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Yong Lee ,  Hyun Min Koo ,  Sung Soo Kim ,  Jae Young Kim ,  Jae Chan Park

IPC: C07K14/34 ,  C12N15/77 ,  C12P7/18 ,  C12P7/62 ,  C08G63/16 ,  C08G63/183 ,  C12N9/90 ,  C12N9/10

CPC classification number: C12P7/18 ,  C07K14/34 ,  C08G63/16 ,  C08G63/183 ,  C12N9/1029 ,  C12N9/90 ,  C12N15/77 ,  C12P7/62

Abstract: A modified microorganism for producing a high yield of 1,4-butanediol, and a method of producing 1,4-butanediol using the modified microorganism, wherein the modified microorganism is altered so as to delete or disrupt expression of at least one of transcription regulatory factor NCg12886, GCN5-related N-acetyltransferase NCg12090, hypothetical protein NCg10224 or sugar phosphate isomerase/epimerase NCg12956.

Abstract translation: 用于生产高产量的1,4-丁二醇的改性微生物以及使用该修饰的微生物生产1,4-丁二醇的方法，其中改变的微生物被改变以便删除或破坏至少一种转录调节物的表达 因子NCg12886，GCN5相关N-乙酰转移酶NCg12090，假想蛋白NCg10224或糖磷酸异构酶/差向异构酶NCg12956。