公开(公告)号：US20080076330A1

公开(公告)日：2008-03-27

申请号：US11923544

申请日：2007-10-24

Applicant: Manoocher Birang ,  Lawrence Rosenberg ,  Sasson Somekh ,  John White

Inventor： Manoocher Birang ,  Lawrence Rosenberg ,  Sasson Somekh ,  John White

IPC: B24B1/00

CPC classification number: B24B21/004 ,  B24B21/008 ,  B24B21/04 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/16 ,  B24B37/24 ,  B24B37/245 ,  B24B53/017 ,  B24D7/12 ,  H01L21/30625

Abstract: A method of polishing a substrate includes polishing a substrate with a generally linear polishing sheet, polishing the substrate with polishing pad composed of a napped poromeric material, and conditioning the polishing pad.

Abstract translation: 抛光衬底的方法包括用基本上线性的抛光片抛光衬底，用由新鲜的孔体材料构成的抛光垫抛光衬底，并调理抛光垫。

公开(公告)号：US07323095B2

公开(公告)日：2008-01-29

申请号：US10792069

申请日：2004-03-03

Applicant: Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

Inventor： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

IPC: C25D21/00 ,  C25D7/12

CPC classification number: C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

Abstract translation: 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基底定位在其中具有电解质的部分封闭体中，其中离开可渗透盘的第一距离处。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘。 在沉积期间，部分封闭物和基底相对彼此旋转。

公开(公告)号：US20070288116A1

公开(公告)日：2007-12-13

申请号：US11736350

申请日：2007-04-17

Applicant: Amir Al-Bayati ,  Babak Adibi ,  Majeed Foad ,  Sasson Somekh

Inventor： Amir Al-Bayati ,  Babak Adibi ,  Majeed Foad ,  Sasson Somekh

IPC: G06F19/00

CPC classification number: H01L21/67253 ,  H01L22/20

Abstract: Methods, systems, and mediums of controlling a semiconductor manufacturing process are described. The method comprises the steps of measuring at least one critical dimension of at least one device being fabricated on at least one of the plurality of wafers, determining at least one process parameter value on the at least one measured dimension, and controlling at least one semiconductor manufacturing tool to process the at least one of the plurality of wafers based on the at least one parameter value. A variation in the at least one critical dimension causes undesirable variations in performance of the at least one device, and at least one process condition is directed to controlling the processing performed on the plurality of wafers. The at least one manufacturing tool includes at least one of an implanter tool and an annealing tool.

Abstract translation: 描述了控制半导体制造工艺的方法，系统和介质。 该方法包括以下步骤：测量在至少一个晶片上制造的至少一个器件的至少一个临界尺寸，确定至少一个测量尺寸上的至少一个工艺参数值，以及控制至少一个半导体 基于所述至少一个参数值来处理所述多个晶片中的所述至少一个的制造工具。 所述至少一个关键尺寸的变化导致所述至少一个装置的性能的不期望的变化，并且至少一个处理条件涉及控制在所述多个晶片上执行的处理。 所述至少一个制造工具包括注入机工具和退火工具中的至少一个。

公开(公告)号：US20060194525A1

公开(公告)日：2006-08-31

申请号：US11329648

申请日：2006-01-10

Applicant: Robert Tolles ,  Norm Shendon ,  Sasson Somekh ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Lee

Inventor： Robert Tolles ,  Norm Shendon ,  Sasson Somekh ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Lee

IPC: B24B9/00

CPC classification number: H01L21/67057 ,  B08B1/007 ,  B24B27/0023 ,  B24B37/30 ,  B24B37/345 ,  B24B41/005 ,  B24B53/017 ,  B24B57/02 ,  H01L21/30625 ,  H01L21/67051

Abstract: A polishing method usable in an apparatus including a rotatable member rotatable about a first axis, at least one substrate head assembly supported on said rotatable member, and at least two polishing surfaces arranged below said rotatable member at respective angular positions about said first axis is described. In one implementation, a substrate can be mounted onto a first one of said at least one substrate head assembly. The rotatable member can be rotated to a position so that the substrate overlies a selected one of the polishing surfaces. The substrate can be engaged with said selected polishing surface and relative linear movement imparted between the selected polishing surface and the first substrate head assembly, while the substrate is engaged with the selected polishing surface.

Abstract translation: 描述了可用于包括可围绕第一轴可旋转的可旋转构件，支撑在所述可旋转构件上的至少一个基板头组件和在围绕所述第一轴线的各个角位置处布置在所述可旋转构件下方的至少两个抛光表面的设备的抛光方法， 。 在一个实施方案中，可以将衬底安装在所述至少一个衬底头组件中的第一个上。 可旋转构件可以旋转到一个位置，使得衬底覆盖所选择的一个抛光表面。 衬底可以与所选择的抛光表面接合并且在所选择的抛光表面和第一衬底头组件之间施加的相对线性运动，同时衬底与所选择的抛光表面接合。

公开(公告)号：US06796880B2

公开(公告)日：2004-09-28

申请号：US10394599

申请日：2003-03-21

Applicant: Fred C. Redeker ,  Manoocher Birang ,  Shijian Li ,  Sasson Somekh

Inventor： Fred C. Redeker ,  Manoocher Birang ,  Shijian Li ,  Sasson Somekh

IPC: B24B100

CPC classification number: B24B37/005 ,  B24B21/04 ,  B24B49/04 ,  B24B49/12 ,  H01L21/30625

Abstract: A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

Abstract translation: 用于化学机械抛光的抛光制品。 抛光制品包括具有抛光表面的大致细长的抛光片。 抛光制品由基本上不透明的材料形成，并且具有基本上延伸至少半透明的抛光片的长度的离散区域。

公开(公告)号：US06352467B1

公开(公告)日：2002-03-05

申请号：US09591186

申请日：2000-06-08

Applicant: Sasson Somekh ,  Debabrata Ghosh ,  Bret W. Adams

Inventor： Sasson Somekh ,  Debabrata Ghosh ,  Bret W. Adams

IPC: B24B100

CPC classification number: H01L21/67748 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/67253 ,  H01L21/67751 ,  H01L21/67757 ,  H01L21/76877

Abstract: A fabrication tool integrates one or more electrodeposition stations with a CMP apparatus. The tool may transport substrates from the electroplating stations to the CMP apparatus without an intervening cleaning step. In addition, the thickness of an electrodeposited layer may be measured at a metrology station prior to polishing utilizing an instrument which physically contacts the surface of the substrate, and the measured thickness may be used to adjust the polishing parameters. Furthermore, the fabrication tool may have a single interface in which a dry and clean wafer is returned to the interface.

Abstract translation: 制造工具将一个或多个电沉积工位与CMP装置集成。 该工具可以将基板从电镀站输送到CMP设备，而无需中间清洁步骤。 此外，电沉积层的厚度可以在使用物理接触衬底的表面的仪器进行抛光之前在计量站处测量，并且可以使用测量的厚度来调整抛光参数。 此外，制造工具可以具有单个界面，其中干燥且干净的晶片返回到界面。

公开(公告)号：US6110011A

公开(公告)日：2000-08-29

申请号：US966939

申请日：1997-11-10

Applicant: Sasson Somekh ,  Debabrata Ghosh ,  Bret W. Adams

Inventor： Sasson Somekh ,  Debabrata Ghosh ,  Bret W. Adams

IPC: C25D7/12 ,  C25D5/48 ,  H01L21/00 ,  H01L21/288 ,  H01L21/304 ,  H01L21/677 ,  H01L21/768 ,  B24B7/22

CPC classification number: H01L21/67748 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/67253 ,  H01L21/67751 ,  H01L21/67757 ,  H01L21/76877

Abstract: A fabrication tool integrates one or more electrodeposition stations with a CMP apparatus. The tool may transport substrates from the electroplating stations to the CMP apparatus without an intervening cleaning step. In addition, the thickness of an electrodeposited layer may be measured at a metrology station prior to polishing utilizing an instrument which physically contacts the surface of the substrate, and the measured thickness may be used to adjust the polishing parameters. Furthermore, the fabrication tool may have a single interface in which a dry and clean wafer is returned to the interface.

Abstract translation: 制造工具将一个或多个电沉积工位与CMP装置集成。 该工具可以将基板从电镀站输送到CMP设备，而无需中间清洁步骤。 此外，电沉积层的厚度可以在使用物理接触衬底的表面的仪器进行抛光之前在计量站处测量，并且可以使用测量的厚度来调整抛光参数。 此外，制造工具可以具有单个界面，其中干燥且干净的晶片返回到界面。

公开(公告)号：US6093082A

公开(公告)日：2000-07-25

申请号：US314462

申请日：1999-05-18

Applicant: Sasson Somekh

Inventor： Sasson Somekh

IPC: B24B37/005 ,  B24B37/30 ,  H01L21/304 ,  B24B5/00 ,  B24B49/00

CPC classification number: B24B37/30 ,  B24B37/0053

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

公开(公告)号：US6080046A

公开(公告)日：2000-06-27

申请号：US58945

申请日：1998-04-10

Applicant: Norm Shendon ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee ,  Robert D. Tolles ,  Sasson Somekh

Inventor： Norm Shendon ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee ,  Robert D. Tolles ,  Sasson Somekh

IPC: B24B27/00 ,  B24B37/30 ,  B24B37/34 ,  B24B41/00 ,  B24B53/007 ,  B24B53/017 ,  B24B53/12 ,  B24B57/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  B24B1/00

CPC classification number: H01L21/67057 ,  B08B1/007 ,  B24B27/0023 ,  B24B37/30 ,  B24B37/345 ,  B24B41/005 ,  B24B53/017 ,  B24B53/12 ,  B24B57/02 ,  H01L21/67051 ,  H01L21/30625

Abstract: A wafer storage and wafer transfer system adjunct to a multi-station chemical mechanical polishing system. Multiple wafers are brought to the system stored in a cassette. A claw member attached to an overhead arm picks up the cassette and deposits it in a water-filled tub next to the polishing system, thereby submerging the wafers in the water with a generally vertical orientation. A blade member attached to the same arm has a recess formed in its surface connected to a vacuum generator powered by positive fluid pressure to thereby selectively apply a vacuum to the recess to vacuum chuck a wafer. The blade member vacuum chucks a wafer under the water, picks it out of the water, and deposits it on a pedestal in polishing system. One of several wafer heads on a rotating carousel picks up the wafer from the pedestal and carries it to one or more of the polishing stations for polishing. After completion of polishing, the wafer head redeposits the wafer on the pedestal. The blade member vacuum chucks the wafer and moves it from the pedestal back to the same cassette or another cassette in the water-filled tub.

Abstract translation: 晶圆储存和晶片转移系统，附加于多工位化学机械抛光系统。 多个晶片被带到存储在盒中的系统。 附接到顶架的爪构件拾取盒并将其沉积在靠近抛光系统的充满水的桶中，从而以大致垂直的方向将晶片浸没在水中。 附接到同一个臂上的叶片构件在其表面上形成有一个与由正的流体压力驱动的真空发生器连接的表面，从而选择性地向凹槽施加真空以真空吸附晶片。 叶片构件真空吸附水下的晶片，将其从水中取出，并将其沉积在抛光系统的基座上。 旋转圆盘传送带上的几个晶片头中的一个从基座拾取晶片并将其运送到一个或多个抛光站用于抛光。 抛光完成后，晶片头将晶片重新沉积在基座上。 刀片构件真空吸盘并将其从基座移回到充满水的桶中的同一盒或另一盒。

公开(公告)号：US5855681A

公开(公告)日：1999-01-05

申请号：US751485

申请日：1996-11-18

Applicant: Dan Maydan ,  Sasson Somekh ,  Ashok Sinha ,  Kevin Fairbairn ,  Christopher Lane ,  Kelly Colborne ,  Hari K. Ponnekanti ,  W. N.(Nick) Taylor

Inventor： Dan Maydan ,  Sasson Somekh ,  Ashok Sinha ,  Kevin Fairbairn ,  Christopher Lane ,  Kelly Colborne ,  Hari K. Ponnekanti ,  W. N.(Nick) Taylor

IPC: H01L21/00 ,  H01L21/205 ,  H01L21/677 ,  H01L21/687 ,  C23C16/00 ,  C23F1/02

CPC classification number: H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/68707 ,  H01L21/68785

Abstract: The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.

Abstract translation: 本发明通常提供一种盒式到盒式真空处理系统，其同时处理多个晶片，并且结合了单晶片处理室和多个晶片处理的优点，用于高质量晶片处理，高晶圆吞吐量和减小的占地面积。 根据本发明的一个方面，该系统优选地是分级真空系统，其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室，用于容纳晶片处理器的传送室，以及一个或 更多的处理室具有可彼此隔离的两个或更多个处理区域，并且优选地共享公共气体供应源和公共排气泵。 处理区域还优选地包括单独的气体分配组件和RF功率源，以在每个处理区域中在晶片表面上提供均匀的等离子体密度。 处理室被配置为允许在至少两个处理区域中同时执行多个隔离过程，使得可以在室内同时处理至少两个晶片，具有由共用气源提供的高程度的过程控制，共用排气系统 ，独立的气体分配组件，独立的射频电源和独立的温度控制系统。