公开(公告)号：US5365113A

公开(公告)日：1994-11-15

申请号：US125

申请日：1993-01-04

申请人： Toshiyuki Sakuta ,  Kazuyuki Miyazawa ,  Satoshi Oguchi ,  Aizo Kaneda ,  Masao Mitani ,  Shozo Nakamura ,  Kunihiko Nishi ,  Gen Murakami

发明人： Toshiyuki Sakuta ,  Kazuyuki Miyazawa ,  Satoshi Oguchi ,  Aizo Kaneda ,  Masao Mitani ,  Shozo Nakamura ,  Kunihiko Nishi ,  Gen Murakami

IPC分类号： H01L23/29 ,  H01L23/495 ,  H01L23/48 ,  H01L23/02 ,  H01L23/28 ,  H01L29/46

CPC分类号： H01L23/4951 ,  H01L23/293 ,  H01L2224/05599 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48599 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/14

摘要： A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.

摘要翻译： 半导体器件与半导体芯片相连，该半导体芯片在与其前表面或第一主表面的中心位置相对应的部分处具有多个接合焊盘;半导体芯片，覆盖在半导体芯片上并具有开口 与接合焊盘相对应，多个有机绝缘膜上的引线，以及密封或封装这些成分的成型树脂。

公开(公告)号：US5981315A

公开(公告)日：1999-11-09

申请号：US166532

申请日：1998-10-06

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L21/44

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5530286A

公开(公告)日：1996-06-25

申请号：US293555

申请日：1994-08-22

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L24/32 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06136 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73215 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5585665A

公开(公告)日：1996-12-17

申请号：US451267

申请日：1995-05-30

申请人： Ichiro Anjoh ,  Gen Murakami ,  Michael A. Lamson ,  Katherine G. Heinen

发明人： Ichiro Anjoh ,  Gen Murakami ,  Michael A. Lamson ,  Katherine G. Heinen

IPC分类号： H01L23/50 ,  H01L23/495

CPC分类号： H01L23/4951 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/06 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/06136 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/73215 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/85207 ,  H01L2224/92147 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  Y10T29/49121

摘要： A lead frame for a semiconductor IC device has a pair of common elongated leads and first and second groups of slender leads arranged on opposite sides of the common elongated leads and generally extending transverse to the common elongated leads. The common elongated leads have as their integral parts slender leads extending therefrom generally transverse thereto and substantially linear extensions from both ends of the common elongated leads. The linear extensions serve to firmly support a semiconductor chip to be packaged along with parts of the leads. The common elongated leads may further have as their integral parts projections extending from their sides for enhancement of the heat dissipation capability. A semiconductor chip may have bonding pads arranged thereon such that bonding wires and the common elongated leads do not cross each other for electrical connection between the common elongated leads and bonding pads of the semiconductor chip.

摘要翻译： 用于半导体IC器件的引线框架具有一对公共细长引线和布置在公共细长引线的相对侧上的第一和第二组细长引线，并且通常横向于公共细长引线延伸。 共同的细长引线具有作为它们的整体部分的细长引线，其大致横向延伸，并且从公共细长引线的两端基本上线性延伸。 线性扩展件用于牢固地支撑要与引线的一部分一起封装的半导体芯片。 共同的细长引线还可以具有作为它们的一体部分的突起从其侧面延伸以增强散热能力。 半导体芯片可以具有布置在其上的接合焊盘，使得接合线和公共细长引线彼此不交叉以在公共细长引线和半导体芯片的接合焊盘之间进行电连接。

公开(公告)号：US5442233A

公开(公告)日：1995-08-15

申请号：US989956

申请日：1992-12-10

申请人： Ichiro Anjoh ,  Gen Murakami ,  Michael A. Lamson ,  Katherine G. Heinen

发明人： Ichiro Anjoh ,  Gen Murakami ,  Michael A. Lamson ,  Katherine G. Heinen

IPC分类号： H01L23/50 ,  H01L23/495 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52 ,  H01L29/60

CPC分类号： H01L23/4951 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/06 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/06136 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/73215 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/85207 ,  H01L2224/92147 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  Y10T29/49121

摘要： A lead frame for a semiconductor IC device has a pair of common elongated leads and first and second groups of slender leads arranged on opposite sides of the common elongated leads and generally extending transverse to the common elongated leads. The common elongated leads have as their integral parts slender leads extending therefrom generally transverse thereto and substantially linear extensions from both ends of the common elongated leads. The linear extensions serve to firmly support a semiconductor chip to be packaged along with parts of the leads. The common elongated leads may further have as their integral parts projections extending from their sides for enhancement of the heat dissipation capability. A semiconductor chip may have bonding pads arranged thereon such that bonding wires and the common elongated leads do not cross each other for electrical connection between the common elongated leads and bonding pads of the semiconductor chip.

摘要翻译： 用于半导体IC器件的引线框架具有一对公共细长引线和布置在公共细长引线的相对侧上的第一和第二组细长引线，并且通常横向于公共细长引线延伸。 共同的细长引线具有作为它们的整体部分的细长引线，其大致横向延伸，并且从公共细长引线的两端基本上线性延伸。 线性扩展件用于牢固地支撑要与引线的一部分一起封装的半导体芯片。 共同的细长引线还可以具有作为它们的一体部分的突起从其侧面延伸以增强散热能力。 半导体芯片可以具有布置在其上的接合焊盘，使得接合线和公共细长引线彼此不交叉以在公共细长引线和半导体芯片的接合焊盘之间进行电连接。

公开(公告)号：US5296737A

公开(公告)日：1994-03-22

申请号：US755655

申请日：1991-09-06

申请人： Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Nae Yoneda ,  Ryuji Kohno ,  Gen Murakami ,  Ichiro Anjoh

发明人： Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Nae Yoneda ,  Ryuji Kohno ,  Gen Murakami ,  Ichiro Anjoh

IPC分类号： H01L23/495 ,  H01L23/28

CPC分类号： H01L23/49575 ,  H01L23/49524 ,  H01L24/50

摘要： A semiconductor device comprises a plurality of semiconductor chips; electrodes formed on circuit surfaces of said plurality of semiconductor chips; inner leads made of a metal foil and bonded at first ends thereof to the electrodes, outer leads each having a predetermined surface at a first end thereof bonded to a second end of at least one of the inner leads, and a sealing material sealing said plurality of semiconductor chips, the electrodes, the inner leads, and part of each of the outer leads. The semiconductor chips are laminated in such a manner that those surfaces of the semiconductor chips on which their respective circuits are formed are disposed in facing relation to each other. This provides a semiconductor device which is excellent in assembling efficiency.

摘要翻译： 半导体器件包括多个半导体芯片; 形成在所述多个半导体芯片的电路表面上的电极; 内部引线由金属箔制成并在其第一端连接到电极，外部引线在其第一端处具有预定的表面，其结合至少一个内部引线的第二端;以及密封材料，密封所述多个 半导体芯片，电极，内引线和每个外引线的一部分。 半导体芯片以这样的方式层压，使得形成有各自电路的半导体芯片的那些表面彼此面对地设置。 这提供了组装效率优异的半导体器件。

公开(公告)号：US5256903A

公开(公告)日：1993-10-26

申请号：US797964

申请日：1991-11-26

申请人： Maya Obata ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Ryuji Kohno ,  Nae Yoneda ,  Ichiro Anjoh ,  Gen Murakami

发明人： Maya Obata ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Ryuji Kohno ,  Nae Yoneda ,  Ichiro Anjoh ,  Gen Murakami

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L23/30

CPC分类号： H01L23/49506 ,  H01L21/56 ,  H01L23/3142 ,  H01L23/4951 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01057 ,  H01L2924/181

摘要： A plastic encapsulated semiconductor device containing one or more of insulating films. Uneven surfaces, such as recesses and roughened surfaces, are strategically provided on peripheral side (edge) surfaces of the insulating films. As a result, therefore, an interface separation does not easily occur between the side surfaces of the insulating films and the encapsulating resin. If such an interface separation should occur, it cannot develop easily. Thus, it is possible to obtain a plastic encapsulated semiconductor device of a high level of reliability even when the largest possible semiconductor element is mounted therein within limited outside dimensions.

摘要翻译： 一种包含一种或多种绝缘膜的塑料封装半导体器件。 在绝缘膜的周边（边缘）表面上策略性地提供不均匀的表面，例如凹槽和粗糙表面。 因此，绝缘膜和封装树脂的侧面之间不容易发生界面分离。 如果这样的界面分离应该发生，就不容易开发。 因此，即使在有限的外部尺寸下将最大可能的半导体元件安装在其中，也可以获得高可靠性的塑料封装的半导体器件。

公开(公告)号：US6018191A

公开(公告)日：2000-01-25

申请号：US35104

申请日：1998-03-05

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L23/52

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5793099A

公开(公告)日：1998-08-11

申请号：US646031

申请日：1996-05-07

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US6072231A

公开(公告)日：2000-06-06

申请号：US066877

申请日：1998-04-28

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.