公开(公告)号：US09269823B2

公开(公告)日：2016-02-23

申请号：US14479776

申请日：2014-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Takayuki Saito ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

Abstract: In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.

Abstract translation: 在小型化晶体管中，需要栅极绝缘层来减小其厚度; 然而，在栅绝缘层是单层氧化硅膜的情况下，由于隧穿电流（即栅极漏电流）的增加，可能会发生栅极绝缘层变薄的物理极限。 通过使用栅极绝缘层使用相对介电常数高于或等于10的高k膜，减小了小型化晶体管的栅极漏电流。 通过使用高k膜作为相对介电常数高于与氧化物半导体层接触的第二绝缘层的第一绝缘层的第一绝缘层，栅绝缘层的厚度可以比栅的厚度薄 根据氧化硅膜考虑的绝缘层。

公开(公告)号：US09196639B2

公开(公告)日：2015-11-24

申请号：US14134371

申请日：2013-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/60 ,  H01L29/04 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78648

Abstract: A semiconductor device with high aperture ratio is provided. The semiconductor device includes a nitride insulating film, a transistor over the nitride insulating film, and a capacitor including a pair of electrodes over the nitride insulating film. An oxide semiconductor layer is used for a channel formation region of the transistor and one of the electrodes of the capacitor. A transparent conductive film is used for the other electrode of the capacitor. One electrode of the capacitor is in contact with the nitride insulating film, and the other electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor.

Abstract translation: 提供了一种具有高开口率的半导体器件。 半导体器件包括氮化物绝缘膜，氮化物绝缘膜上的晶体管，以及包括氮化物绝缘膜上的一对电极的电容器。 氧化物半导体层用于晶体管的沟道形成区域和电容器的电极之一。 透明导电膜用于电容器的另一个电极。 电容器的一个电极与氮化物绝缘膜接触，并且电容器的另一个电极电连接到晶体管的源电极和漏极电极之一。

公开(公告)号：US08999811B2

公开(公告)日：2015-04-07

申请号：US14013383

申请日：2013-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC: H01L21/76 ,  H01L29/66 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

Abstract translation: 使用含有硅氧化物自由基的绝缘层作为与用于形成沟道的氧化物半导体层接触的绝缘层。 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。

公开(公告)号：US08927990B2

公开(公告)日：2015-01-06

申请号：US13651809

申请日：2012-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Kosei Noda ,  Yuhei Sato ,  Yuta Endo

IPC: H01L21/477 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42364

Abstract: Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

Abstract translation: 氧化物半导体膜中的氢浓度和氧空位减少。 提高了包括使用氧化物半导体膜的晶体管的半导体器件的可靠性。 本发明的一个实施例是一种半导体器件，其包括基底绝缘膜; 形成在所述基底绝缘膜上的氧化物半导体膜; 形成在所述氧化物半导体膜上的栅极绝缘膜; 以及与氧化物半导体膜重叠的栅电极，其间设置有栅极绝缘膜。 基极绝缘膜通过电子自旋共振显示出g值为2.01的信号。 氧化物半导体膜通过电子自旋共振不显示g值为1.93的信号。

公开(公告)号：US12052853B2

公开(公告)日：2024-07-30

申请号：US18233172

申请日：2023-08-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Takayuki Ikeda ,  Kiyoshi Kato ,  Yuta Endo ,  Junpei Sugao

IPC: H10B12/00 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

CPC classification number: H10B12/00 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

Abstract: A semiconductor device with a large storage capacity per unit area is provided.
A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.

公开(公告)号：US11963360B2

公开(公告)日：2024-04-16

申请号：US17236115

申请日：2021-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tomoaki Atsumi ,  Yuta Endo

IPC: H01L27/1157 ,  G11C16/04 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  G11C16/10 ,  G11C16/26

CPC classification number: H10B43/35 ,  G11C16/0466 ,  G11C16/0483 ,  H10B43/27 ,  H10B43/40 ,  G11C16/10 ,  G11C16/26

Abstract: A highly integrated semiconductor device is provided. The semiconductor device includes a substrate, a prism-like insulator, a memory cell string including a plurality of transistors connected in series. The prism-like insulator is provided over the substrate. The memory cell string is provided on the side surface of the prism-like insulator. The plurality of transistors each include a gate insulator and a gate electrode. The gate insulator includes a first insulator, a second insulator, and a charge accumulation layer. The charge accumulation layer is positioned between the first insulator and the second insulator.

公开(公告)号：US11705524B2

公开(公告)日：2023-07-18

申请号：US17048255

申请日：2019-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuya Kakehata ,  Yuta Endo

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648

Abstract: A semiconductor device with high on-state current and high reliability is provided. The semiconductor device includes first to fifth insulators, first to third oxides, and first to fourth conductors; the fifth insulator includes an opening in which the second oxide is exposed; the third oxide is placed in contact with a bottom portion of the opening and a side portion of the opening; the second insulator is placed in contact with the third oxide; the third conductor is provided in contact with the second insulator; the third insulator is placed in contact with a top surface of the third conductor and the second insulator; and the fourth conductor is in contact with the third insulator and the top surface of the third conductor and placed in the opening.

公开(公告)号：US11631756B2

公开(公告)日：2023-04-18

申请号：US17073520

申请日：2020-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/786 ,  H01L29/423 ,  H01L21/425 ,  H01L21/02 ,  H01L21/477 ,  H01L21/28

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

公开(公告)号：US11152366B2

公开(公告)日：2021-10-19

申请号：US16619190

申请日：2018-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Takayuki Ikeda ,  Kiyoshi Kato ,  Yuta Endo ,  Junpei Sugao

IPC: H01L29/10 ,  H01L27/108 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

Abstract: A semiconductor device with a large storage capacity per unit area is provided. A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.

公开(公告)号：US11139322B2

公开(公告)日：2021-10-05

申请号：US16565546

申请日：2019-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786

Abstract: A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.