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    End-pumped vertical external cavity surface emitting laser
    11.
    发明申请
    End-pumped vertical external cavity surface emitting laser 有权

    公开(公告)号：US20060251140A1

    公开(公告)日：2006-11-09

    申请号：US11399391

    申请日：2006-04-07

    申请人： Jun-Ho Lee

    发明人： Jun-Ho Lee

    IPC分类号： H01S3/04 ,  H01S3/091 ,  H01S3/08 ,  H01S3/092

    CPC分类号： H01S5/183 ,  H01S3/109 ,  H01S5/02 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/041 ,  H01S5/14

    摘要： There is provided an end-pumped vertical external cavity surface emitting laser (VECSEL) in which a pump laser beam is incident on a laser chip at a right angle. In the external cavity surface emitting laser, a laser chip package is provided with a laser chip emitting light at a first wavelength by optical pumping, an external mirror is spaced apart from a top surface of the laser chip package to transmit a portion of the light emitted from the laser chip to the outside and to reflect the remainder to the laser chip, a heat sink is coupled to the bottom surface of the laser chip package to discharge heat generated by the laser chip, and a pump laser faces a bottom surface of the heat sink to emit pump light at a second wavelength perpendicular to the laser chip.

    METHOD OF FABRICATING ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF REPAIRING THE SAME
    15.
    发明申请
    METHOD OF FABRICATING ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF REPAIRING THE SAME 有权
    制造有机电致发光器件的阵列基板的方法及其修复方法

    公开(公告)号：US20120064641A1

    公开(公告)日：2012-03-15

    申请号：US13153789

    申请日：2011-06-06

    申请人： Mi-Youn Yang ,  Jun-Ho Lee ,  Seung-Hyun Cho

    发明人： Mi-Youn Yang ,  Jun-Ho Lee ,  Seung-Hyun Cho

    IPC分类号： H01L33/00

    CPC分类号： H01L27/1259 ,  H01L27/3244 ,  H01L2251/568

    摘要： A method of fabricating an organic electroluminescent device (OELD) according to the present invention has steps of repairing a pixel region by irradiating a laser on a drain contact hole of a passivation layer in a pixel region in need of the repair; and disabling the connection between an organic electroluminescent diode and a drain electrode of a driving thin film transistor (TFT), where the pixel region of the OELD has i) the driving TFT comprising the drain electrode, ii) the passivation layer covering the driving TFT, while comprising the drain contact hole exposing the drain electrode of the driving TFT, and iii) the organic electroluminescent diode connected to the drain electrode of the driving TFT via the drain contact hole.

    摘要翻译： 根据本发明的制造有机电致发光器件（OELD）的方法具有通过在需要修复的像素区域中的钝化层的漏极接触孔上照射激光来修复像素区域的步骤; 以及禁止驱动薄膜晶体管（TFT）的有机电致发光二极管和漏电极之间的连接，其中OELD的像素区域具有i）包括漏电极的驱动TFT，ii）覆盖驱动TFT的钝化层 同时包括暴露驱动TFT的漏电极的漏极接触孔，以及iii）经由漏极接触孔连接到驱动TFT的漏电极的有机电致发光二极管。

    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS
    17.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS 审中-公开
    用金属半导体复合源/漏极接触区制造半导体器件的方法

    公开(公告)号：US20100197089A1

    公开(公告)日：2010-08-05

    申请号：US12699491

    申请日：2010-02-03

    申请人： Jin-Bum Kim ,  Yu-Gyun Shin ,  Jung-Yun Won ,  In-Sun Jung ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Yu-Gyun Shin ,  Jung-Yun Won ,  In-Sun Jung ,  Jun-Ho Lee

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823814 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/2855 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/665 ,  H01L29/66636 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.

    摘要翻译： 制造半导体器件的方法包括在半导体衬底上和/或半导体衬底中形成晶体管，其中晶体管包括源极/漏极区域和设置在与源极/漏极区域相邻的沟道区域上的栅极图案。 在晶体管上形成绝缘层并图案化以暴露源/漏区域。 在暴露的源极/漏极区域和绝缘层的相邻部分上形成半导体源极层。 在半导体源层上形成金属源层。 进行退火以在源极/漏极区域上形成第一金属 - 半导体化合物区域和在绝缘层的相邻部分上形成第二金属 - 半导体化合物区域。 第一金属 - 半导体化合物区域可以比第二金属 - 半导体化合物区域厚。 金属源层可以包括金属层和金属氮化物阻挡层。

    Light absorbent and organic antireflection coating composition containing the same
    19.
    发明申请
    Light absorbent and organic antireflection coating composition containing the same 有权
    含有该吸收剂和有机抗反射涂料的组合物

    公开(公告)号：US20090258321A1

    公开(公告)日：2009-10-15

    申请号：US12157819

    申请日：2008-06-13

    申请人： Joo-Hyeon Park ,  Ji-Young Kim ,  Jun-Ho Lee

    发明人： Joo-Hyeon Park ,  Ji-Young Kim ,  Jun-Ho Lee

    IPC分类号： G03F7/004 ,  C07C69/74 ,  C09D5/32 ,  C07D307/77 ,  C07D307/89

    CPC分类号： G03F7/091

    摘要： The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b), or a compound of formula (2): wherein in the formulas (1a) and (1b), X is a compound selected from the group consisting of a substituted or unsubstituted cyclic compound having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms; wherein in the formulas (2), X is a compound selected from the group consisting of a substituted or unsubstituted cyclic compound having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms.Furthermore, the organic anti-reflection film composition according to the present invention includes a light absorbent represented by the formula (1a), a polymer, a thermal acid generating agent, a crosslinking agent and a solvent.An anti-reflection film using the compound of the present invention exhibits excellent adhesiveness and storage stability, and excellent resolution in both C/H patterns and L/S patterns. Also, the patterning method of the invention has an excellent process window, and thus excellent pattern profiles can be obtained irrespective of the type of substrate.

    摘要翻译： 本发明涉及一种用于有机抗反射涂层形成的光吸收剂和含有它的有机抗反射膜组合物。 根据本发明的有机抗反射膜形成用吸光剂是下式（1a）的化合物，下式（1b）的化合物，式（1a）和（1b）的化合物的混合物， 或式（2）的化合物：其中在式（1a）和（1b）中，X是选自取代或未取代的具有1至20个碳原子的环状化合物，芳基，二芳基醚， 二芳基硫醚，二芳基亚砜和二芳基酮; R1为氢原子，取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。 式（2）中，X为选自具有1至20个碳原子的取代或未取代的环状化合物，芳基，二芳基醚，二芳基硫醚，二芳基亚砜和二芳基酮的化合物; R1为氢原子，取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。 此外，本发明的有机抗反射膜组合物包括由式（1a）表示的吸光剂，聚合物，热酸产生剂，交联剂和溶剂。 使用本发明化合物的防反射膜表现出优异的粘合性和储存稳定性，以及C / H图案和L / S图案中的优异的分辨率。 此外，本发明的图案化方法具有优异的工艺窗口，因此可以获得优异的图案图案，而与基板的类型无关。