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公开(公告)号：US20100155254A1
公开(公告)日：2010-06-24
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。
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12.发明授权公开(公告)号：US08540857B1
公开(公告)日：2013-09-24
申请号：US13571199
申请日：2012-08-09
申请人： Steven Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
发明人： Steven Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
CPC分类号： C25D17/001 , C25D5/08 , C25D17/002 , C25D17/008
摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.
摘要翻译： 用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。 在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。 阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。 所提供的配置有效地减少故障并改善设备的操作范围。
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13.发明授权公开(公告)号：US08262871B1
公开(公告)日：2012-09-11
申请号：US12640992
申请日：2009-12-17
申请人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
发明人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
CPC分类号： C25D17/001 , C25D5/08 , C25D17/002 , C25D17/008
摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.
摘要翻译： 用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。 在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。 阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。 所提供的配置有效地减少故障并改善设备的操作范围。
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公开(公告)号：US09816193B2
公开(公告)日：2017-11-14
申请号：US13324890
申请日：2011-12-13
申请人： Kousik Ganesan , Tighe Spurlin , Jonathan D. Reid , Shantinath Ghongadi , Andrew McKerrow , James E. Duncan
发明人： Kousik Ganesan , Tighe Spurlin , Jonathan D. Reid , Shantinath Ghongadi , Andrew McKerrow , James E. Duncan
摘要： Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about 100 parts per million or less of an accelerator. After reducing the oxygen concentration of the plating solution, a wafer substrate is contacted with the plating solution in a plating cell. The oxygen concentration of the plating solution in the plating cell is about 1 part per million or less. A metal is electroplated with the plating solution onto the wafer substrate in the plating cell. After electroplating the metal onto the wafer substrate, an oxidizing strength of the plating solution is increased.
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15.发明申请公开(公告)号：US20100055924A1
公开(公告)日：2010-03-04
申请号：US12199412
申请日：2008-08-27
IPC分类号： H01L21/306
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
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16.发明申请公开(公告)号：US20140190529A1
公开(公告)日：2014-07-10
申请号：US13857883
申请日：2013-04-05
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
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17.发明授权公开(公告)号：US08419964B2
公开(公告)日：2013-04-16
申请号：US12199412
申请日：2008-08-27
IPC分类号： H01L21/302
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
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公开(公告)号：US20100219920A1
公开(公告)日：2010-09-02
申请号：US12394339
申请日：2009-02-27
申请人： Jingbin Feng , Aaron LaBrie , Kousik Ganesan
发明人： Jingbin Feng , Aaron LaBrie , Kousik Ganesan
IPC分类号： H01F7/02
CPC分类号： H01L21/68728 , Y10S414/141 , Y10T279/18
摘要： Provided are magnetically actuated wafer chucks that permit a wafer to be clamped or undamped at any time during a process and at any rotational speed, as desired. Such wafer chucks may include constraining members that are movable between open and closed positions. In a closed position, a constraining member aligns the wafer after wafer handoff and/or clamps the wafer during rotation to prevent it from flying off the chuck. In an open position, the constraining member moves away from the wafer to allow liquid etchant to flow from the wafer edge without obstruction. The constraining members may be, for example, cams, attached to arms or links of the chuck. The cams or other constraining members move between open and closed positions by self-balancing forces including a first force, such as a spring force, that acts to move a cam in a first direction, and a non-contact actuate-able force, such as a magnetic force, that acts to move the cam in the opposite direction. The resulting cam motion is smooth and continuous.
摘要翻译： 提供了磁力驱动的晶片卡盘，其允许晶片在工艺期间的任何时间以及根据需要以任何转速进行夹紧或无阻尼。 这种晶片卡盘可以包括可在打开位置和闭合位置之间移动的约束构件。 在关闭位置，限制构件在晶片切换之后对准晶片和/或在旋转期间夹紧晶片以防止其从卡盘飞出。 在打开位置，约束构件远离晶片移动，以允许液体蚀刻剂从晶片边缘流动而无障碍。 约束构件可以是例如凸轮，附接到卡盘的臂或连杆。 凸轮或其他约束构件通过自平衡力在打开和关闭位置之间移动，包括用于沿第一方向移动凸轮的第一力（例如弹簧力）和非接触致动力 作为磁力，其作用是使凸轮沿相反方向移动。 所得到的凸轮运动是平滑和连续的。
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公开(公告)号：US09138784B1
公开(公告)日：2015-09-22
申请号：US12961274
申请日：2010-12-06
申请人： Jeffrey Alan Hawkins , Charles Lorenzo Merrill , Jason Daniel Marchetti , Kousik Ganesan , Bryan L. Buckalew
发明人： Jeffrey Alan Hawkins , Charles Lorenzo Merrill , Jason Daniel Marchetti , Kousik Ganesan , Bryan L. Buckalew
CPC分类号： B08B3/10 , B01D19/00 , H01L21/67017 , H01L21/67051
摘要： An apparatus for conditioning deionized water and delivering it to a semiconductor wafer in a post electrofill module includes a degassing station configured to remove dissolved gas from the deionized water flow, a heating station configured to heat the deionized water flow, and a nozzle configured to deliver the deionized water flow to the wafer. The heating and degassing are performed before the delivery of the deionized water flow to the wafer. In some implementations the degassing station includes a contact degasser or an inert gas bubbler, and the heating station is configured to heating the deionized water flow to a temperature of between about 35-40° C. In some embodiments the deionized water flow is passed through the degassing station before being passed through the heating station.
摘要翻译： 一种用于调节去离子水并将其输送到后电解电池模块中的半导体晶片的设备包括：脱气站，其被配置为从去离子水流中除去溶解的气体;加热站，被配置为加热去离子水流;以及喷嘴， 去离子水流向晶片。 在将去离子水流输送到晶片之前进行加热和脱气。 在一些实施方案中，脱气站包括接触脱气器或惰性气体起泡器，并且加热站配置为将去离子水流加热到约35-40℃之间的温度。在一些实施方案中，去离子水流通过 脱气站通过加热站。
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公开(公告)号：US08172646B2
公开(公告)日：2012-05-08
申请号：US12394339
申请日：2009-02-27
申请人： Jingbin Feng , Aaron LaBrie , Kousik Ganesan
发明人： Jingbin Feng , Aaron LaBrie , Kousik Ganesan
IPC分类号： B24B1/00
CPC分类号： H01L21/68728 , Y10S414/141 , Y10T279/18
摘要： Provided are magnetically actuated wafer chucks that permit a wafer to be clamped or unclamped at any time during a process and at any rotational speed, as desired. Such wafer chucks may include constraining members that are movable between open and closed positions. In a closed position, a constraining member aligns the wafer after wafer handoff and/or clamps the wafer during rotation to prevent it from flying off the chuck. In an open position, the constraining member moves away from the wafer to allow liquid etchant to flow from the wafer edge without obstruction. The constraining members may be, for example, cams, attached to arms or links of the chuck. The cams or other constraining members move between open and closed positions by self-balancing forces including a first force, such as a spring force, that acts to move a cam in a first direction, and a non-contact actuate-able force, such as a magnetic force, that acts to move the cam in the opposite direction. The resulting cam motion is smooth and continuous.
摘要翻译： 提供了磁力驱动的晶片卡盘，其允许晶片在工艺期间的任何时间被夹紧或松开，并且根据需要以任何转速。 这种晶片卡盘可以包括可在打开位置和闭合位置之间移动的约束构件。 在关闭位置，限制构件在晶片切换之后对准晶片和/或在旋转期间夹紧晶片以防止其从卡盘飞出。 在打开位置，约束构件远离晶片移动，以允许液体蚀刻剂从晶片边缘流动而无障碍。 约束构件可以是例如凸轮，附接到卡盘的臂或连杆。 凸轮或其他约束构件通过自平衡力在打开和关闭位置之间移动，包括用于沿第一方向移动凸轮的第一力（例如弹簧力）和非接触致动力 作为磁力，其作用是使凸轮沿相反方向移动。 所得到的凸轮运动是平滑和连续的。
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