公开(公告)号：US07456449B2

公开(公告)日：2008-11-25

申请号：US10998801

申请日：2004-11-30

申请人： Hiroyuki Fujiwara ,  Takahito Suzuki ,  Susumu Chihara ,  Mitsuhiko Ogihara ,  Ichimatsu Abiko ,  Masaaki Sakuta

发明人： Hiroyuki Fujiwara ,  Takahito Suzuki ,  Susumu Chihara ,  Mitsuhiko Ogihara ,  Ichimatsu Abiko ,  Masaaki Sakuta

IPC分类号： H01L27/76

CPC分类号： B41J2/45 ,  H01L27/153

摘要： A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. An interconnecting line links the semiconductor film with electrical circuitry on the substrate. The interconnecting line includes a pad located on the substrate, between the thin semiconductor film and the electrical circuitry. The pad, which is wider than other parts of the interconnecting line, can be used as a probe pad for testing the apparatus, and in particular for testing the electrical circuitry on the substrate before the thin semiconductor film is attached.

摘要翻译： 半导体装置具有附着有包括至少一个半导体器件的薄半导体膜的衬底。 互连线将半导体膜与衬底上的电路连接。 互连线包括位于衬底上的衬垫，位于薄的半导体膜和电路之间。 比互连线的其它部分更宽的焊盘可以用作用于测试设备的探针焊盘，特别是用于在薄的半导体膜附着之前测试衬底上的电路。

公开(公告)号：US20080274571A1

公开(公告)日：2008-11-06

申请号：US12165699

申请日：2008-07-01

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

IPC分类号： H01L21/00

CPC分类号： H01L25/0753 ,  B41J2/45 ,  H01L21/6835 ,  H01L33/0079 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/48227 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/3025

摘要： In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.

摘要翻译： 在制造半导体薄膜片器件的方法中，从形成在第一衬底（35）上的半导体薄膜片（14）中选择多个半导体薄膜片（14），并结合到第一组 在第二基板（12）上的预定区域。 随后，从剩余的半导体薄膜片（14）中选择多个半导体薄膜片，并结合到第二组预定区域。

公开(公告)号：US20060097354A1

公开(公告)日：2006-05-11

申请号：US11268556

申请日：2005-11-08

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Takahito Suzuki ,  Masaaki Sakuta ,  Ichimatsu Abiko

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Takahito Suzuki ,  Masaaki Sakuta ,  Ichimatsu Abiko

IPC分类号： H01L29/12

CPC分类号： H01L24/83 ,  B41J2/45 ,  H01L24/29 ,  H01L24/32 ,  H01L27/153 ,  H01L2224/27444 ,  H01L2224/2747 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29114 ,  H01L2224/29117 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/32502 ,  H01L2224/83005 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/00

摘要： A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

公开(公告)号：US20050127389A1

公开(公告)日：2005-06-16

申请号：US10998801

申请日：2004-11-30

申请人： Hiroyuki Fujiwara ,  Takahito Suzuki ,  Susumu Chihara ,  Mitsuhiko Ogihara ,  Ichimatsu Abiko ,  Masaaki Sakuta

发明人： Hiroyuki Fujiwara ,  Takahito Suzuki ,  Susumu Chihara ,  Mitsuhiko Ogihara ,  Ichimatsu Abiko ,  Masaaki Sakuta

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  H01L21/60 ,  H01L27/15 ,  H01L29/10 ,  H01L33/30 ,  H01L33/58

CPC分类号： B41J2/45 ,  H01L27/153

摘要： A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. An interconnecting line links the semiconductor film with electrical circuitry on the substrate. The interconnecting line includes a pad located on the substrate, between the thin semiconductor film and the electrical circuitry. The pad, which is wider than other parts of the interconnecting line, can be used as a probe pad for testing the apparatus, and in particular for testing the electrical circuitry on the substrate before the thin semiconductor film is attached.

摘要翻译： 半导体装置具有附着有包括至少一个半导体器件的薄半导体膜的衬底。 互连线将半导体膜与衬底上的电路连接。 互连线包括位于衬底上的衬垫，位于薄的半导体膜和电路之间。 比互连线的其它部分更宽的焊盘可以用作用于测试设备的探针焊盘，特别是用于在薄的半导体膜附着之前测试衬底上的电路。

公开(公告)号：US06297842B1

公开(公告)日：2001-10-02

申请号：US08531753

申请日：1995-09-21

申请人： Masumi Koizumi ,  Yichao Jiang ,  Tsutomu Nomoto ,  Ichimatsu Abiko

发明人： Masumi Koizumi ,  Yichao Jiang ,  Tsutomu Nomoto ,  Ichimatsu Abiko

IPC分类号： B41J2447

CPC分类号： B41J2/451 ,  B41J2/45 ,  H01L27/32 ,  H01L51/5012 ,  H01L51/52 ,  H01L51/5203 ,  H01L51/5212 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48227 ,  H01L2251/5315 ,  H01L2251/533 ,  H01L2924/00014

摘要： A light-emitting array and its driving circuitry are integrated into a single device. The driving circuitry is formed in a semiconductor substrate and has an array of output terminals on a surface of the substrate. Organic electroluminescent elements are formed directly over the output terminals, in electrical contact with the output terminals. The electroluminescent elements are driven by direct current. An optical head assembly has one or more of these light-emitting arrays mounted on a printed circuit board.

摘要翻译： 发光阵列及其驱动电路集成到单个器件中。 驱动电路形成在半导体衬底中，并且在衬底的表面上具有输出端子阵列。 有机电致发光元件直接形成在输出端子上，与输出端子电接触。 电致发光元件由直流电驱动。 光头组件具有安装在印刷电路板上的这些发光阵列中的一个或多个。

公开(公告)号：US08343848B2

公开(公告)日：2013-01-01

申请号：US12165699

申请日：2008-07-01

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

IPC分类号： H01L21/30

CPC分类号： H01L25/0753 ,  B41J2/45 ,  H01L21/6835 ,  H01L33/0079 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/48227 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/3025

摘要： In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.

摘要翻译： 在制造半导体薄膜片器件的方法中，从形成在第一衬底（35）上的半导体薄膜片（14）中选择多个半导体薄膜片（14），并结合到第一组 在第二基板（12）上的预定区域。 随后，从剩余的半导体薄膜片（14）中选择多个半导体薄膜片，并结合到第二组预定区域。

公开(公告)号：US20100096748A1

公开(公告)日：2010-04-22

申请号：US12654486

申请日：2009-12-22

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masaaki Sakuta ,  Ichimatsu Abiko

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masaaki Sakuta ,  Ichimatsu Abiko

IPC分类号： H01L23/52

CPC分类号： H01L25/167 ,  B41J2/45 ,  H01L27/153 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.

摘要翻译： 组合半导体装置包括具有集成电路的半导体衬底，形成在半导体衬底的表面中的平坦化区域，以及包含至少一个半导体器件并结合在平坦化区域上的半导体薄膜。 其中形成有半导体器件的半导体薄膜的表面设置在平坦化区域的一侧。 该装置还可以包括设置在平坦化区域和半导体薄膜之间的平坦化膜。

公开(公告)号：US07408566B2

公开(公告)日：2008-08-05

申请号：US10970637

申请日：2004-10-21

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

IPC分类号： B41J2/45 ,  H01L33/00

CPC分类号： H01L25/0753 ,  B41J2/45 ,  H01L21/6835 ,  H01L33/0079 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/48227 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/3025

摘要： In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.

公开(公告)号：US07239337B2

公开(公告)日：2007-07-03

申请号：US10705895

申请日：2003-11-13

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

IPC分类号： B41J2/45 ,  H01L23/48

CPC分类号： B41J2/451 ,  B41J2/45 ,  H01L27/153 ,  H01L33/0079 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate.

摘要翻译： 半导体器件包括两个结合到衬底的薄的半导体膜，以及将第一薄膜半导体膜中的半导体器件与第二薄膜半导体膜中的集成电路电连接的薄膜互连线。 两个薄的半导体膜与衬底分开形成。 第一薄膜半导体膜可以包括半导体器件阵列。 第一和第二薄的半导体膜可以被复制为与同一衬底结合的阵列。

公开(公告)号：US06913985B2

公开(公告)日：2005-07-05

申请号：US10870142

申请日：2004-06-18

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masaaki Sakuta ,  Ichimatsu Abiko

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masaaki Sakuta ,  Ichimatsu Abiko

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L21/46

CPC分类号： H01L21/2007 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/977 ,  H01L2924/00

摘要： A peeling layer (13) and semiconductor thin film (20a) are formed on a first substrate (11), individual support materials (19) are formed thereupon, grooves (23) penetrating the semiconductor thin film and reaching the peeling layer (13) are formed in the semiconductor thin film (20a) by etching using the individual support materials (19) as a mask so as to divide the semiconductor thin film (20a) into a plurality of semiconductor thin film pieces (20) and form a plurality of assemblies of the semiconductor thin film pieces (20) and the individual support materials (19) fixed thereto, the semiconductor thin film pieces (20) are separated from the first substrate (11) while the individual support materials (19) remain fixed to the semiconductor thin film pieces (20), and they are then affixed to a second substrate (31). The invention facilitates handling of semiconductor thin film pieces.

摘要翻译： 在第一基板（11）上形成有剥离层（13）和半导体薄膜（20a），在其上形成有单独的支撑材料（19），穿过半导体薄膜并到达剥离层（13）的凹槽 ）通过使用各个支撑材料（19）作为掩模的蚀刻形成在半导体薄膜（20a）中，以将半导体薄膜（20a）分成多个半导体薄膜片（20）并形成 半导体薄膜片（20）和固定于其上的各个支撑材料（19）的多个组件，半导体薄膜片（20）与第一衬底（11）分离，同时保持各个支撑材料（19） 固定到半导体薄膜片（20）上，然后将它们固定到第二衬底（31）上。 本发明有利于半导体薄膜片的处理。