公开(公告)号：US20080073640A1

公开(公告)日：2008-03-27

申请号：US11798627

申请日：2007-05-15

Applicant: Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

Inventor： Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

IPC: H01L29/12 ,  H01L21/20

CPC classification number: H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L29/66977 ,  H01L33/06 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3412 ,  H01S2304/04

Abstract: The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.

Abstract translation: 制造半导体器件的方法包括通过自组装生长在基底层10上形成量子点16的步骤; 在形成量子点16之前或阶段中将Sb或GaSb照射到基底层10的表面的步骤; 用As原料气体蚀刻量子点16的表面，从而除去沉积在量子点16的表面上的含有Sb的InSb层18; 并且在去除了InSb层18的量子点16上生长封盖层22。

公开(公告)号：US6074485A

公开(公告)日：2000-06-13

申请号：US206976

申请日：1998-12-08

Applicant: Shiro Tsukamoto ,  Nobuyuki Koguchi

Inventor： Shiro Tsukamoto ,  Nobuyuki Koguchi

IPC: G01N37/00 ,  B05C11/00 ,  C30B23/02 ,  C30B23/08 ,  G01N27/00 ,  G01Q30/18 ,  G01Q30/20 ,  G01Q60/10 ,  G01Q80/00 ,  H01L21/203

CPC classification number: G01Q60/16 ,  B82Y35/00 ,  C30B23/02 ,  G01Q30/02 ,  Y10S977/852 ,  Y10T117/1004

Abstract: A STM drive mechanism capable of moving a scanning tunneling microscope (STM) incorporated with a molecular beam epitaxy (MBE) device in the MBE device under vacuum and a substrate holder with a wide clearance formed between a substrate heating system and the substrate holder are provided. The STM is protected by a heat insulating shield from high vapor pressure atmosphere and radiant heat according to substrate heating.

Abstract translation: 提供了一种STM驱动机构，其能够在真空下移动在MBE器件中并入分子束外延（MBE）器件的扫描隧道显微镜（STM）和在衬底加热系统和衬底保持器之间形成的具有宽间隙的衬底保持器 。 STM通过绝热屏蔽而受到高蒸汽压力气氛和辐射热的保护，根据基板加热。

公开(公告)号：USD318287S

公开(公告)日：1991-07-16

申请号：US422375

申请日：1989-10-16

Applicant: Shiro Tsukamoto

Designer： Shiro Tsukamoto

公开(公告)号：US10006117B2

公开(公告)日：2018-06-26

申请号：US13881510

申请日：2011-10-25

Applicant: Shiro Tsukamoto ,  Kazumasa Ohashi

Inventor： Shiro Tsukamoto ,  Kazumasa Ohashi

IPC: C23C14/34 ,  H01J37/34 ,  B23K1/20

CPC classification number: C23C14/34 ,  B23K1/20 ,  C23C14/3407 ,  H01J37/3426 ,  H01J37/3435

Abstract: Provided is a sputtering target-backing plate assembly wherein a Cu—Cr alloy backing plate is bonded to a Ti target via a layer of a strain absorbing material placed at an interface between the Ti target and the Cu—Cr alloy backing plate. In particular, the present invention relates to a sputtering target-backing plate assembly and a production method thereof, the assembly being capable of absorbing strain at the interface between the target and the backing plate in order to prevent deformation (displacement) during sputtering. An object of the present invention is to solve a problem inherent to Titanium (Ti) and a problem in selecting a backing plate compatible with it.

公开(公告)号：US20140174917A1

公开(公告)日：2014-06-26

申请号：US14234699

申请日：2012-09-14

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: H01J37/34

CPC classification number: H01J37/3476 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/3288 ,  H01J37/34 ,  H01J37/3447 ,  Y10T29/49748

Abstract: The present invention relates to a method for recycling a tantalum coil for sputtering that is disposed between a substrate and a sputtering target. The method for recycling a tantalum coil for sputtering is characterized in that the whole or partial surface of a spent tantalum coil is subject to cutting (cutting is performed until a re-deposited film and knurling traces are eliminated) so as to eliminate the re-deposited film that was formed during sputtering, and knurling is newly performed to the cut portion. While sputtered grains are accumulated (re-deposited) on the surface of the tantalum coil disposed between the substrate and the sputtering target during sputtering, by eliminating the sputtered grains accumulated on the spent coil by way of cutting after the sputtering is complete, the tantalum coil can be efficiently recycled. Thus, provided is technology capable of lean manufacturing of new coils, improving productivity, and stably providing such coils.

Abstract translation: 本发明涉及设置在基板和溅射靶之间的用于再循环用于溅射的钽线圈的方法。 用于再循环用于溅射的钽线圈的方法的特征在于，废钽线圈的整个或部分表面被切割（进行切割直到重新淀积的膜和滚花痕迹被消除），以便消除重新 在溅射期间形成的沉积膜，并且对切割部分新进行滚花。 当在溅射期间溅射的晶粒在设置在衬底和溅射靶之间的钽线圈的表面上积累（重新沉积）时，通过在溅射完成之后通过切割消除积聚在废线圈上的溅射晶粒，钽 线圈可以有效回收。 因此，提供了能够精密制造新线圈的技术，提高生产率并稳定地提供这种线圈。

公开(公告)号：US08728255B2

公开(公告)日：2014-05-20

申请号：US11909471

申请日：2006-02-08

Applicant: Atsushi Fukushima ,  Shiro Tsukamoto

Inventor： Atsushi Fukushima ,  Shiro Tsukamoto

IPC: C23C14/34

CPC classification number: C23C14/34 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414

Abstract: Provided is a pot-shaped copper sputtering target manufactured with die forging, wherein the Vickers hardness Hv at all locations of the inner surface of the pot-shaped target is 70 or greater. With this pot-shaped copper sputtering target, the average crystal grain size in the target structure is 65 μm or less. Further, the inner surface of the pot-shaped target comprises crystalline orientations of (220), (111), (200), (311) obtained by X-ray diffraction, and the crystalline orientation of the face subject to erosion of the pot-shaped target is of a (220) primary orientation. An object of the present invention is to obtain a manufacturing method of a high quality sputtering target by improving and devising the forging process and heat treatment process to make the crystal grain size refined and uniform, and to obtain a high-quality sputtering target.

Abstract translation: 提供了一种用模锻制造的盆形铜溅射靶，其中罐形靶的内表面的所有位置处的维氏硬度Hv为70以上。 利用该盆形铜溅射靶，目标结构中的平均结晶粒径为65μm以下。 此外，盆形靶的内表面包括通过X射线衍射获得的（220），（111），（200），（311）的结晶取向，并且受到锅腐蚀的面的结晶取向 形状的目标是（220）的主要方向。 本发明的目的是通过改进和设计锻造工艺和热处理工艺来获得高品质溅射靶的制造方法，以使晶粒细化和均匀，并获得高质量的溅射靶。

公开(公告)号：US20120255859A1

公开(公告)日：2012-10-11

申请号：US13517208

申请日：2010-12-21

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: C23C14/14 ,  B23K20/00 ,  B23K31/02 ,  C23C14/34

CPC classification number: C23C14/3414 ,  B23K20/021 ,  C23C14/14 ,  H01J37/3255 ,  H01J37/3426 ,  H01J37/3435

Abstract: An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering.

Abstract translation: 钆靶和钛背板的组件，其中所述钆靶钛背板组件在所述钆靶和所述钛背衬板之间的结合界面处具有固相扩散键合界面。 本发明的目的是发现适用于钆溅射靶的背板，探索最佳的接合条件，提高沉积速率，稳定溅射工艺，并防止目标材料发生翘曲和分离。 通过增加目标材料和背板之间的结合强度，以及在溅射期间抑制颗粒的产生，从而形成背板。

公开(公告)号：US07951275B2

公开(公告)日：2011-05-31

申请号：US10566301

申请日：2004-08-24

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: C23C14/06

CPC classification number: C23C14/3414

Abstract: Provided is a hollow cathode sputtering target comprising an inner bottom face having a surface roughness of Ra≦1.0 μm, and preferably Ra≦0.5 μm. This hollow cathode sputtering target has superior sputter film evenness (uniformity), generates few arcing and particles, is capable of suppressing the peeling of the redeposited film on the bottom face, and has superior deposition characteristics.

Abstract translation: 提供一种空心阴极溅射靶，其包括表面粗糙度Ra＆lt; 1lE;1.0μm的内底面，优选Ra＆lt; lE;0.5μm。 该空心阴极溅射靶具有优异的溅射膜均匀性（均匀性），产生少量电弧和粒子，能够抑制底面上的再沉积膜的剥离，并且具有优异的沉积特性。

公开(公告)号：US06383286B1

公开(公告)日：2002-05-07

申请号：US09584092

申请日：2000-05-31

Applicant: Nobuyuki Koguchi ,  Shiro Tsukamoto

Inventor： Nobuyuki Koguchi ,  Shiro Tsukamoto

IPC: C30B1310

CPC classification number: B82B3/00 ,  C30B7/00 ,  C30B29/605 ,  G01Q80/00 ,  H01L21/02601 ,  H01L21/02636 ,  H01L21/228 ,  H01L29/12 ,  Y10S977/749 ,  Y10S977/815 ,  Y10S977/819 ,  Y10S977/881

Abstract: The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, and allows the doping of impurity atoms only to the core portion with the number of the impurity atoms being controlled. For example, droplet epitaxy is employed for the formation of the semiconductor nano-structure which constitutes the core, and scanning tunnel microscopy is employed for the doping of impurity atoms into the semiconductor nano-structure, so as to selectively introduce the impurity atoms only into the core, with the number of the impurity atoms controlled with a single-atom level accuracy

Abstract translation: 本发明揭示了一种用于制造半导体超原子及其集合体的新方法，其允许形成直径为10nm的半导体纳米结构，其用于构成核心，并且允许 仅将杂质原子掺杂到核心部分，其中杂质原子的数量被控制。 例如，使用液滴外延形成构成芯的半导体纳米结构，并且使用扫描隧道显微镜将杂质原子掺杂到半导体纳米结构中，以便将杂质原子仅选择性地引入 核心，以单原子级精度控制杂质原子数

公开(公告)号：US5062140A

公开(公告)日：1991-10-29

申请号：US340034

申请日：1989-04-18

Applicant: Kiyofumi Inanaga ,  Hiroyuki Sogawa ,  Shiro Tsukamoto

Inventor： Kiyofumi Inanaga ,  Hiroyuki Sogawa ,  Shiro Tsukamoto

IPC: H04R1/34 ,  H04R9/02 ,  H04R9/04

CPC classification number: H04R1/345 ,  H04R9/02 ,  H04R9/045 ,  H04R2209/043

Abstract: In a speaker which comprises a diaphragm having a vibrating portion and an annular conductive portion, a current feeding coil facing the conductive portion with a predetermined gap therebetween, and a magnetic circuit including a top plate, a magnet and a yoke plate to which the current feeding coil is attached; the diaphragm is formed so that an electrical resistance of its conductive portion is lower than an electrical resistance of its vibrating portion.