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    Metal Conductor Chemical Mechanical Polish
    11.
    发明申请
    Metal Conductor Chemical Mechanical Polish 有权
    金属导体化学机械抛光

    公开(公告)号：US20140159243A1

    公开(公告)日：2014-06-12

    申请号：US14182912

    申请日：2014-02-18

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Soon-Kang Huang ,  Han-Hsin Kuo ,  Chi-Ming Yang ,  Shwang-Ming Jeng ,  Chin-Hsiang Lin

    IPC: H01L23/538 ,  H01L21/67

    CPC classification number: H01L23/5386 ,  H01L21/02074 ,  H01L21/28079 ,  H01L21/67011 ,  H01L21/7684 ,  H01L29/495 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.

    Abstract translation: 本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。 在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体 和电介质层。 该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。

    Method for manufacturing semiconductor structure
    13.
    发明授权
    Method for manufacturing semiconductor structure 有权

    公开(公告)号：US11482422B2

    公开(公告)日：2022-10-25

    申请号：US17008162

    申请日：2020-08-31

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Nai-Han Cheng ,  Chi-Ming Yang

    IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/317 ,  H01J37/32

    Abstract: In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes providing a substrate including a first atom and a second atom; forming a compound over the substrate by bonding the first atom with a ionized etchant; and removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant include different ions.

    Ellipsometer and method for estimating thickness of film
    15.
    发明授权
    Ellipsometer and method for estimating thickness of film 有权

    公开(公告)号：US10760896B2

    公开(公告)日：2020-09-01

    申请号：US16116135

    申请日：2018-08-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Feng Yuan Hsu ,  Chi-Ming Yang ,  Ching-Hsiang Hsu ,  Chyi Shyuan Chern

    IPC: G01B11/06 ,  H01L21/66 ,  G01N21/21

    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.

    Fine temperature controllable wafer heating system
    17.
    发明授权
    Fine temperature controllable wafer heating system 有权

    公开(公告)号：US10020209B2

    公开(公告)日：2018-07-10

    申请号：US15161429

    申请日：2016-05-23

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Ying-Hsueh Chang Chien ,  Chi-Ming Yang

    IPC: H01L21/67 ,  H01L21/66 ,  H01L21/68

    CPC classification number: H01L21/6708 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68 ,  H01L22/26

    Abstract: Disclosed are a method and a system for processing wafers in fabricating a semiconductor device where disposing chemicals and wafer heating are needed for chemical reaction. A wafer is placed above a wafer heater such that a second surface faces the wafer heater, and heated from the second surface. A chemical layer is formed on an opposing first surface. The wafer heater is sized and configured to be capable of heating the entire second surface, and adapted to produce a locally differential temperature profile if needed. During heating, an actual temperature profile on the wafer may be monitored and transmitted to a computing system, which may generate a target temperature profile and control the wafer heater to adjust local temperatures on the wafer according to the target temperature profile. A supplemental heater for heating the chemicals may be used for finer control of the wafer temperature.

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