公开(公告)号：US11267693B2

公开(公告)日：2022-03-08

申请号：US16943910

申请日：2020-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Wei-Cheng Shen ,  Wen-Chien Chen

IPC: B81B3/00 ,  B81C1/00

Abstract: A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

公开(公告)号：US10756086B1

公开(公告)日：2020-08-25

申请号：US16281950

申请日：2019-02-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Fu-Chun Huang ,  Ching-Hui Lin ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Alexander Kalnitsky

IPC: H01L27/07 ,  H01L29/06 ,  H01L49/02 ,  H01L21/8234 ,  H01L21/762

Abstract: A method of manufacturing a semiconductor structure is provided, wherein the method includes the following operations. A substrate having a transistor is received, wherein the transistor includes a channel region and a gate on a first side of the channel region. The second side of the channel region of the transistor is exposed, wherein the second side is opposite to the first side. A metal oxide is formed on the second side of the channel region of the transistor, wherein the metal oxide contacts the channel region and is exposed to the environment. A semiconductor structure and an operation of a semiconductor structure thereof are also provided.

公开(公告)号：US20200025712A1

公开(公告)日：2020-01-23

申请号：US16577928

申请日：2019-09-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Yi-Shao Liu

IPC: G01N27/414 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/28

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

公开(公告)号：US09815685B2

公开(公告)日：2017-11-14

申请号：US14739419

申请日：2015-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Yi-Hsien Chang ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Wei-Cheng Shen

IPC: H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  H04R19/00

CPC classification number: B81B3/001 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00182 ,  H04R19/00 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.

公开(公告)号：US09791406B2

公开(公告)日：2017-10-17

申请号：US15284283

申请日：2016-10-03

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: H01L51/05 ,  G01N27/414 ,  H01L21/84 ,  H01L27/12 ,  H01L51/00

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L21/84 ,  H01L27/1203 ,  H01L51/0093

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US09709525B2

公开(公告)日：2017-07-18

申请号：US14799453

申请日：2015-07-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Shao Liu ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

IPC: H01L29/66 ,  G01N27/414 ,  H01L21/311

CPC classification number: G01N27/4145 ,  G01N27/4148 ,  H01L21/31105 ,  H01L27/088 ,  H01L29/66477

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US09417209B2

公开(公告)日：2016-08-16

申请号：US14703724

申请日：2015-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Cheng Shen ,  Yi-Hsien Chang ,  Shih-Wei Lin ,  Chun-Ren Cheng

IPC: G01N27/403 ,  G01N27/414

CPC classification number: G01N27/4145 ,  G01N27/4148

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

公开(公告)号：US09254487B2

公开(公告)日：2016-02-09

申请号：US14310440

申请日：2014-06-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Alex Kalnitsky ,  Chun-Wen Cheng

IPC: G01N27/447 ,  G01N27/453 ,  B01L3/00 ,  B81C1/00 ,  G01N33/543 ,  H01L21/02

CPC classification number: B01L3/502792 ,  B01L3/502707 ,  B01L2400/0427 ,  B81B2201/0214 ,  B81C1/00523 ,  G01N33/54366 ,  H01L21/02

Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples is disclosed. The device includes a microfluidic channel that is coupled to fluidic control circuitry, a photosensor array coupled to sensor control circuitry, an optical component aligned with the photosensor array to manipulate a light signal before the light signal reaches the photosensor array, and a microfluidic grid coupled to the microfluidic channel and providing for transport of bio-entity sample droplets by electrowetting. The device further includes logic circuitry coupled to the fluidic control circuitry and the sensor control circuitry, with the fluidic control circuitry, the sensor control circuitry, and the logic circuitry being formed on a first substrate.

Abstract translation: 公开了一种用于操纵和处理生物实体样本的集成半导体器件。 该装置包括耦合到流体控制电路的微流体通道，耦合到传感器控制电路的光电传感器阵列，与光传感器阵列对准的光学部件以在光信号到达光电传感器阵列之前操纵光信号;以及耦合 涉及微流体通道并且通过电润湿提供生物实体样品液滴的输送。 该装置还包括耦合到流体控制电路和传感器控制电路的逻辑电路，流体控制电路，传感器控制电路和逻辑电路形成在第一基板上。

公开(公告)号：US09228974B2

公开(公告)日：2016-01-05

申请号：US13946782

申请日：2013-07-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Hsien Chang ,  Wei-Cheng Shen ,  Shih-Wei Lin ,  Chun-Ren Cheng

IPC: G01N27/414

CPC classification number: G01N27/4145 ,  Y10T436/143333

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of microwells having a bio-sensing layer and a number of stacked well portions over a multi-layer interconnect (MLI). A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The microwells are formed by removing a top metal plate on a topmost level of the MLI.

Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括在多层互连（MLI）上具有生物感测层和多个堆叠阱部分的多个微孔。 井部的底面积与直接在下方的井口部的顶面积不同。 通过去除MLI的最上层的顶部金属板来形成微孔。

公开(公告)号：US20150233864A1

公开(公告)日：2015-08-20

申请号：US14703724

申请日：2015-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Cheng Shen ,  Yi-Hsien Chang ,  Shih-Wei Lin ,  Chun-Ren Cheng

IPC: G01N27/414

CPC classification number: G01N27/4145 ,  G01N27/4148

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET包括具有感测层的微孔，感测层下的顶部金属堆叠，以及在顶部金属堆叠下的多层互连（MLI）。 顶部金属堆叠包括顶部金属和保护层，并且围绕顶部金属周围。