MAGNETORESISTANCE EFFECT ELEMENT
    16.
    发明申请

    公开(公告)号:US20210305498A1

    公开(公告)日:2021-09-30

    申请号:US17345084

    申请日:2021-06-11

    Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

    SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

    公开(公告)号:US20200160900A1

    公开(公告)日:2020-05-21

    申请号:US16751318

    申请日:2020-01-24

    Abstract: A spin current magnetization rotational element including a first ferromagnetic metal layer in which a magnetization direction is variable, and a spin-orbit torque wiring that extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, and is joined to the first ferromagnetic metal layer. The first ferromagnetic metal layer has a lamination structure including a plurality of ferromagnetic constituent layers and a plurality of nonmagnetic constituent layers which are respectively interposed between the ferromagnetic constituent layers adjacent to each other. At least one ferromagnetic constituent layer among the plurality of ferromagnetic constituent layers has a film thickness different from a film thickness of the other ferromagnetic constituent layers, and/or at least one nonmagnetic constituent layer among the plurality of nonmagnetic constituent layers has a film thickness different from a film thickness of the other nonmagnetic constituent layers.

    SPIN-ORBIT-TORQUE MAGNETIZATION ROTATIONAL ELEMENT AND SPIN-ORBIT-TORQUE MAGNETORESISTANCE EFFECT ELEMENT

    公开(公告)号:US20200083430A1

    公开(公告)日:2020-03-12

    申请号:US16288317

    申请日:2019-02-28

    Abstract: Provided are a spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit torque wiring and a first ferromagnetic layer laminated on the spin-orbit torque wiring in a first direction, wherein the spin-orbit torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.

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