公开(公告)号：US20230063907A1

公开(公告)日：2023-03-02

申请号：US18048102

申请日：2022-10-20

申请人： Tokyo Electron Limited

发明人： Kyoko IKEDA ,  Kazuya DOBASHI ,  Tsunenaga NAKASHIMA ,  Kenji SEKIGUCHI ,  Shuuichi NISHIKIDO ,  Masato NAKAJO ,  Takahiro YASUTAKE

IPC分类号： B08B5/02

摘要： A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US20220143655A1

公开(公告)日：2022-05-12

申请号：US17585274

申请日：2022-01-26

申请人： TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

发明人： Kazuya DOBASHI ,  Takehiko ORII ,  Yukimasa SAITO ,  Kunihiko KOIKE ,  Takehiko SENOO ,  Koichi IZUMI ,  Yu YOSHINO ,  Tadashi SHOJO ,  Keita KANEHIRA

IPC分类号： B08B5/02 ,  B08B7/00 ,  H01L21/67

摘要： There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

公开(公告)号：US20170207076A1

公开(公告)日：2017-07-20

申请号：US15326018

申请日：2015-05-22

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuya DOBASHI ,  Nobuyuki TAKAHASHI ,  Tatsuya SUZUKI

IPC分类号： H01L21/02 ,  H01L21/311 ,  G03F7/42 ,  B08B5/00 ,  B08B7/00 ,  H01L21/027 ,  H01L21/67

CPC分类号： H01L21/0206 ,  B08B5/00 ,  B08B7/0035 ,  G03F7/42 ,  G03F7/427 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207

摘要： Disclosed is a substrate cleaning method. In this substrate cleaning method, a step (step 10) is performed wherein a removal target film and located above a processing target film is patterned; after step 10, a step (step 11) is performed wherein the patterned removal target film is used as an etching mask to perform anisotropic etching on the processing target film; after step 11, a step (step 12) is performed wherein the remaining removal target film on the processing target film is subjected to gas chemical etching; and after step 12, a step (step 14) is performed wherein a target substrate, which includes the surface of the processing target film, is irradiated with gas clusters, thereby cleaning the surface of the processing target film by removing non-reactive or non-volatile residues remaining on the surface of the processing target film.

公开(公告)号：US20170032984A1

公开(公告)日：2017-02-02

申请号：US15219430

申请日：2016-07-26

申请人： TOKYO ELECTRON LIMITED

发明人： Yudai ITO ,  Kazuya DOBASHI ,  Misako SAITO

IPC分类号： H01L21/67 ,  H01L21/02 ,  B03D1/02 ,  B01D15/08 ,  B01D3/00 ,  H01L21/683 ,  B08B3/14

CPC分类号： H01L21/67051 ,  B01D3/00 ,  B01D15/08 ,  B03D1/02 ,  B08B3/10 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/6831

摘要： Disclosed is a method of performing a liquid processing on a workpiece by a liquid containing charged minute metal-containing impurities, using a liquid processing apparatus including: a holding unit configured to hold the workpiece; and a liquid supplying mechanism configured to supply a liquid to the workpiece held by the holding unit. The method includes: removing the metal-containing impurities contained in the liquid while supplying the liquid to the workpiece held by the holding unit; and/or controlling charging of the workpiece held by the holding unit to suppress the metal-containing impurities from being attached to the workpiece by an electrostatic force.

摘要翻译： 公开了一种使用液体处理装置，通过含有微量含金属杂质的液体对工件进行液体处理的方法，该液体处理装置包括：保持单元，其构造成保持工件; 以及液体供给机构，其构造成将液体供给到由所述保持单元保持的工件。 该方法包括：在将液体供给到由保持单元保持的工件上时，去除包含在液体中的含金属杂质; 和/或控制由保持单元保持的工件的充电，以通过静电力来抑制含金属杂质附着在工件上。

公开(公告)号：US20160163533A1

公开(公告)日：2016-06-09

申请号：US14900566

申请日：2014-04-09

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuya DOBASHI ,  Akihito HAGIWARA

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01L21/0206 ,  H01L21/0209 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68764

摘要： In a tantalum oxide film removal method and apparatus, a silicon substrate having a tantalum oxide film is supported on a spin chuck. A mixed aqueous solution including hydrofluoric acid and organic acid is supplied to the silicon substrate while rotating the silicon substrate together with the spin chuck. The mixed aqueous solution comes into contact with the tantalum oxide film existing on the silicon substrate to remove the tantalum oxide film by the chemical reaction therebetween.

摘要翻译： 在氧化钽膜除去方法和装置中，将具有氧化钽膜的硅衬底支撑在旋转卡盘上。 将包含氢氟酸和有机酸的混合水溶液供给到硅衬底，同时使硅衬底与旋转卡盘一起旋转。 混合水溶液与存在于硅衬底上的氧化钽膜接触，以通过它们之间的化学反应除去氧化钽膜。

公开(公告)号：US20160001334A1

公开(公告)日：2016-01-07

申请号：US14789630

申请日：2015-07-01

申请人： Tokyo Electron Limited

发明人： Kazuya DOBASHI

IPC分类号： B08B6/00 ,  B08B5/00

CPC分类号： B08B5/02 ,  H01L21/67028

摘要： In a substrate cleaning method for cleaning a substrate, the substrate is arranged in a process chamber and exhausting an interior of the process chamber to keep the interior of the process chamber at a vacuum state, and a gas cluster including an electrically charged gas cluster is irradiated toward the substrate in the process chamber. Then, the electrically charged gas cluster is accelerated before the electrically charged gas cluster reaches the substrate, and particles on the substrate are removed by collision of the gas cluster including the accelerated electrically charged gas cluster with the substrate. The substrate and the particles which are electrically charged after the collision are neutralized, and the removed and neutralized particles are discharging from the process chamber along with an exhaust flow.

摘要翻译： 在清洗基板的基板清洗方法中，基板被布置在处理室中并排出处理室的内部以将处理室的内部保持在真空状态，并且包括带电气体簇的气体簇是 在处理室中朝向基板照射。 然后，在带电气体团簇到达基板之前加电带电气体簇，并且通过包括加速带电气体簇的气体簇与基板的碰撞来去除衬底上的颗粒。 碰撞后被充电的基板和颗粒被中和，并且去除和中和的颗粒与排气流一起从处理室排出。

公开(公告)号：US20150052702A1

公开(公告)日：2015-02-26

申请号：US14463670

申请日：2014-08-20

申请人： Tokyo Electron Limited

发明人： Kazuya DOBASHI ,  Kensuke INAI

IPC分类号： H01L21/67

CPC分类号： H01L21/67028 ,  A47L5/38 ,  H01L21/02057

摘要： A substrate cleaning apparatus for removing particles adhered to a substrate includes a cleaning chamber for cleaning a substrate under a vacuum atmosphere, a mounting unit, provided in the cleaning chamber, for mounting the substrate thereon. The substrate cleaning apparatus further includes a nozzle unit for injecting a cleaning gas from an area of a higher pressure than an atmosphere in which the substrate is mounted toward the substrate in the cleaning chamber, generating a gas cluster as an aggregate of atoms or molecules of the cleaning gas by adiabatic expansion and irradiating the gas cluster to the substrate in a direction perpendicular thereto, a gas exhaust port for evacuating the cleaning chamber, and a moving unit for relatively moving the mounting unit and the nozzle unit.

摘要翻译： 用于去除附着在基板上的颗粒的基板清洁装置包括：用于在真空气氛下清洁基板的清洁室，设置在清洁室中的安装单元，用于在其上安装基板。 基板清洗装置还包括喷嘴单元，用于从清洁室中的基板安装的气氛的高压区域喷射清洗气体，产生气体簇作为原子或分子的聚集体 通过绝热膨胀的清洁气体和与其垂直的方向将气体簇照射到基板，用于抽空清洗室的排气口和用于相对移动安装单元和喷嘴单元的移动单元。